US6069055A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabricating method for semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1997-07-01
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Granted: 2000-05-30
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Expires: 2017-07-01
Abstract
Abstract The fabricating method for semiconductor devices in which the trench technique is employed to perform isolation between devices, and which comprises the steps of sequentially depositing a first film 2, 3 and a second film 4 on top of a silicon substrate 1, forming an element isolation trench 5 in the silicon substrate 1 with masking of the first film 2, 3 and second film 4 which have undergone patterning, and growing a silicon oxide film 6 that is generated by reaction of ozone and tetra-ethyl-ortho-silicate inside the element isolation trench where silicon is exposed.
Inventors
- 👤 Takaaki Ukeda
- 👤 Toshiki Yabu
- 👤 Takashi Uehara
- 👤 Mizuki Segawa
- 👤 Masatoshi Arai
- 👤 Masaru Moriwaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:09
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
139 words
A fabricating method for semiconductor devices comprising the steps of: depositing a film on a silicon substrate; patterning said film; forming an isolation trench in said silicon substrate with masking of said patterned film; and growing a silicon oxide film that is generated by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS) at least inside said isolation trench where silicon is exposed; wherein when said silicon oxide film is formed by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS), the concentration of said ozone is optimized so as to cause a growing rate of said silicon oxide film on said film to be lower than that in said isolation trench where said silicon substrate is exposed, so that a surface of the silicon oxide formed inside the isolation trench is made higher than a surface of the silicon oxide formed on said film.
Claim 2
Dependent Claim
139 words
A fabricating method for semiconductor devices comprising the steps of: depositing a film on a silicon substrate; patterning said film; forming an isolation trench in said silicon substrate with masking of said patterned film; and growing a silicon oxide film that is generated by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS) at least inside said isolation trench where silicon is exposed; wherein when said silicon oxide film is formed by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS), the concentration of said ozone is optimized so as to cause a growing rate of said silicon oxide film on said film to be lower than that in said isolation trench where said silicon substrate is exposed, so that a surface of the silicon oxide formed inside the isolation trench is made higher than a surface of the silicon oxide formed on said film.
Claim 3
Dependent Claim
19 words
A fabricating method according to claim 1, wherein said film is a conductive film or a silicon oxide film.
Claim 4
Dependent Claim
24 words
A fabricating method according to claim 2, wherein said conductive film is a metallic silicide film, a metallic film, or a metallic alloy film.
Claim 5
Dependent Claim
191 words
A fabricating method for a transistor, comprising the steps of: depositing a gate oxide film and a polysilicon film on a silicon substrate; depositing a mask film on said polysilicon film, a growing rate of a silicon oxide film generated by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS) thereon is lower than that on the silicon substrate; patterning said gate oxide film, said polysilicon film, and said mask film; forming an isolation trench in said silicon substrate with masking of said mask film which have undergone patterning; and growing a silicon oxide film that is generated by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS) at least inside said isolation trench where silicon is exposed, wherein when said silicon oxide film is formed by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS), the concentration of said ozone is optimized to cause a growing rate of said silicon oxide film on said mask film to be lower than that in said isolation trench where said silicon substrate is exposed, so that a surface of the silicon oxide formed inside the isolation trench is made higher than a surface of the silicon oxide formed on said mask film.
Claim 6
Dependent Claim
191 words
A fabricating method for a transistor, comprising the steps of: depositing a gate oxide film and a polysilicon film on a silicon substrate; depositing a mask film on said polysilicon film, a growing rate of a silicon oxide film generated by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS) thereon is lower than that on the silicon substrate; patterning said gate oxide film, said polysilicon film, and said mask film; forming an isolation trench in said silicon substrate with masking of said mask film which have undergone patterning; and growing a silicon oxide film that is generated by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS) at least inside said isolation trench where silicon is exposed, wherein when said silicon oxide film is formed by reaction of ozone and tetra-ethyl-ortho-silicate (TEOS), the concentration of said ozone is optimized to cause a growing rate of said silicon oxide film on said mask film to be lower than that in said isolation trench where said silicon substrate is exposed, so that a surface of the silicon oxide formed inside the isolation trench is made higher than a surface of the silicon oxide formed on said mask film.
Claim 7
Dependent Claim
20 words
A fabricating method according to claim 4, wherein said mask film is a conductive film or a silicon oxide film.
Claim 8
Dependent Claim
24 words
A fabricating method according to claim 5, wherein said conductive film is a metallic silicide film, a metallic film or a metallic alloy film.
Claim 9
Dependent Claim
34 words
A fabricating method according to claim 4, further comprising a step of forming a gate electrode by patterning at least said gate oxide film and said polysilicon film after growing of said silicon oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-05-30 | 2003-11-29 | 2004-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-30 | 2007-11-29 | 2008-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-30 | 2011-11-29 | 2012-05-30 | $7700.00 | Window Closed / Lapsed |