EP0090520A2
Expired / Lapsed
EP
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A method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate
Assignee: Toshiba Corp
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Filing: 1983-03-08
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Granted: —
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Expires: 2003-03-08
Abstract
Abstract This invention provides a method of forming a buried element isolation region (113) in a semiconductor substrate (101). The method comprises steps of forming a gate electrode material pattern (105) through a gate insulating film formed on a semiconductive substrate, forming a gate electrode (104 1 '-104 4 ') by selectively forming a groove (109, 109') in said gate electrode material pattern (105) to thereby isolate said pattern (105) and burying insulating material (112) in the groove (109, 109').
Inventors
- 👤 Hiroshi Iwai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 08:50
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/025; H10D64/027; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/0148; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
55 words
A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode material pattern through a gate insulating film on a conductive type semiconductor substrate; forming a gate electrode by selectively forming a groove in said gate electrode material pattern to thereby isolate said pattern; and burying insulating material in the groove.
Claim 2
Independent Claim
55 words
A method of manufacturing a semiconductor device comprising the steps of: forming a gate electrode material pattern through a gate insulating film on a conductive type semiconductor substrate; forming a gate electrode by selectively forming a groove in said gate electrode material pattern to thereby isolate said pattern; and burying insulating material in the groove.
Claim 3
Dependent Claim
37 words
The method according to claim 1, characterized in that a gate electrode is formed through a gate insulating film on part of the semiconductor substrate simultaneously upon formation of the gate electrode material pattern on the substrate.
Claim 4
Dependent Claim
25 words
The method according to claim 1, characterized in that the groove is selectively formed over the gate electrode material pattern and the gate insulating film.
Claim 5
Dependent Claim
33 words
The method according to claim 1, characterized in that the groove is formed to reach the gate electrode material pattern and the gate insulating film, and also the surface layer of the substrate.
Claim 6
Dependent Claim
63 words
The method according to claim 1, characterized in that the groove comprising an opening having a width a and an oblique angle 6 of side surfaces is formed, the insulating film is accumulated in a thickness larger than (a cot (e/2)/2), and then the insulating film is etched to allow the insulating material to remain in the groove and to be buried therein.
Claim 7
Dependent Claim
18 words
The method according to claim 5, characterized in that the groove comprises vertical or substantially vertical side surfaces.
Claim 8
Dependent Claim
48 words
The method according to claim 1, characterized in that after the groove is formed, reverse or same conductivity type impurity as the substrate is doped on the part of the substrate at least in the bottom of the groove, before the insulating material is buried in the groove.
Claim 9
Dependent Claim
26 words
The method according to claim 7, characterized in that the doping of the impurity to the groove is performed on the side surface of the groove.
Claim 10
Dependent Claim
36 words
The method according to claim 1, characterized in that the groove comprises a V-shaped section, and a channel stopper layer is formed on the side surfaces of the groove by doping the impurity vertically from above.
Claim 11
Dependent Claim
44 words
The method according to claim 1, characterized in that before the insulating material is buried in the groove, at least part of the groove is oxidized or nitrided, thereby forming an oxidized or nitrided film to a degree which does not block the groove.
Claim 12
Dependent Claim
35 words
The method according to claim 10, characterized in that after the oxidized or nitrided film is formed and before the insulating material is buried in the groove, a conductive material is buried in the groove.
Claim 13
Dependent Claim
15 words
The method according to claim 11, characterized in that the conductive material is polycrystalline silicon.
Claim 14
Dependent Claim
31 words
The method according to claim 11, characterized in that a metal or metal silicide conductive material is buried in the bottom of the groove, and is utilized as a wiring layer.
Claim 15
Dependent Claim
62 words
The method according to claim 1, characterized in that after the insulating material is accumulated, a low temperature melting point substance is doped on the entire or partial surface layer of the insulating film, is heat treated to thereby melt the doped layer of the insulating film, thereby flattening the surface of the insulating film, and the insulating film is subsequently etched.
Claim 16
Dependent Claim
52 words
The method according to claim 1, characterized in that after the insulating material is accumulated, a low temperature melting point insulating film is accumulated on the entire or partial insulating film to thereby melt the insulating film, thereby flattening the surface of the insulating film, and the insulating film is subsequently etched.
Claim 17
Dependent Claim
50 words
The method according to claim 1, characterized in that when the insulating film is accumulated and is etched, a masking material is covered on part of the insulating film, and a portion of the insulating film is allowed to remain on the substrate in addition to that in the groove.
Claim 18
Dependent Claim
26 words
The method according to claim 1, characterized in that before the groove is formed, a field insulating film is formed on part of the semiconductor substrate.
Claim 19
Dependent Claim
24 words
The method according to claim 1, characterized in that the groove and the insulating material buried in the groove are used as field regions.
Claim 20
Dependent Claim
39 words
The method according to claim 1, characterized in that after the groove is formed and the insulating film is accumulated, the insulating film is not etched, but is allowed to remain as an interlayer insulating film on the substrate.
Claim 21
Dependent Claim
40 words
The method according to claim 1, characterized in that the step of forming the gate electrode material pattern is performed by burying the gate electrode material pattern in the groove after the groove is formed in advance in the substrate.
Claim 22
Dependent Claim
35 words
The method according to claim 20, characterized in that the gate electrode is buried in the groove formed in advance in the substrate simultaneously upon burying of the gate electrode material pattern in the groove.
Claim 23
Dependent Claim
28 words
The method according to claim 20, characterized in that impurity ions are implanted in the regions to become source and drain after the gate electrode material is buried.
Claim 24
Dependent Claim
28 words
The method according to claim 20, characterized in that the groove is formed after the impurity ions are implanted in the substrate to form source and drain regions.
Claim 25
Dependent Claim
36 words
The method according to claim 21, characterized in that after the gate electrode material and the gate electrode are buried in the grooves, impurity ions are implanted in the regions to become source and drain regions.
Claim 26
Dependent Claim
27 words
The method according to claim 21, characterized in that the groove is formed after impurity ions are implanted to the substrate to form source and drain regions.
Claim 27
Dependent Claim
94 words
The method according to claim 1, characterized in that after the gate electrode material pattern is formed, a second insulating material is laminated thereon, a portion to form the groove is opened in the second insulating material layer, then the insulating material is buried in the groove, and the insulating material is etched and removed until the surface of the second insulating material layer is exposed, then the second insulating material layer is selectively etched and removed, and the insulating material layer projected from the surface of the gate electrode material pattern is formed.
References Cited (Backward Citations)
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