US6069032A
Expired / Lapsed
US
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Salicide process
Assignee: United Microelectronics Corp
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Filing: 1999-08-17
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Granted: 2000-05-30
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Expires: 2019-08-17
Abstract
Abstract A salicide process is described. The edge of a gate are etched to form a reversed T-shaped gate that is then self-aligned by a silicide film. This etching step can be performed by using a silicon oxynitride layer as an etching mask over the gate.
Inventors
- 👤 Tong-Hsin Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0212; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01324; H10D64/017; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
100 words
A salicide process, comprising: providing a gate with a sidewall over a substrate; forming a first spacer on the sidewall of the gate; partially removing the gate to create an opening on the gate, wherein the opening has a sidewall composed of the first spacer; forming a second spacer on the sidewall of the opening; forming a mask layer partially filling the opening; removing the second spacer; etching the gate to form a plurality of trenches into the edge of the gate, with the mask layer serving as an etching mask; and forming a self-aligned silicide over the etched gate.
Claim 2
Dependent Claim
100 words
A salicide process, comprising: providing a gate with a sidewall over a substrate; forming a first spacer on the sidewall of the gate; partially removing the gate to create an opening on the gate, wherein the opening has a sidewall composed of the first spacer; forming a second spacer on the sidewall of the opening; forming a mask layer partially filling the opening; removing the second spacer; etching the gate to form a plurality of trenches into the edge of the gate, with the mask layer serving as an etching mask; and forming a self-aligned silicide over the etched gate.
Claim 3
Dependent Claim
22 words
The process of claim 1, wherein the gate has a thickness of about 4000 to about 5000 angstroms before being partially removed.
Claim 4
Dependent Claim
15 words
The process of claim 1, wherein the opening has a depth of about 1000 angstroms.
Claim 5
Dependent Claim
17 words
The process of claim 1, wherein each of the trenches has a depth of about 2000 angstroms.
Claim 6
Dependent Claim
16 words
The process of claim 1, wherein the second spacer has a width of about 500 angstroms.
Claim 7
Dependent Claim
14 words
The process of claim 1, wherein the mask layer is made of silicon oxynitride.
Claim 8
Dependent Claim
14 words
The process of claim 1, wherein the second spacer is made of silicon oxide.
Claim 9
Dependent Claim
26 words
The process of claim 1, further comprising the step of forming a dielectric layer surrounding the first spacer over the substrate before partially removing the gate.
Claim 10
Dependent Claim
14 words
The process of claim 8, wherein the dielectric layer is made of silicon nitride.
Claim 11
Dependent Claim
49 words
The process of claim 8, wherein the formation of the dielectric layer comprises: depositing a dielectric material layer over the substrate, wherein the dielectric material layer has a top surface higher than a top surface of the gate; and chemical-mechanical polishing the dielectric layer until the gate is exposed.
Claim 12
Dependent Claim
48 words
The process of claim 8, wherein the formation of the mask layer comprises: depositing a silicon oxynitride layer over the dielectric layer and the gate; and over-polishing the silicon oxynitride layer over the dielectric layer, thereby accomplishing the formation of the mask layer that partially fills the opening.
Claim 13
Dependent Claim
50 words
The process of claim 8, wherein the formation of the mask layer comprises: depositing a silicon oxynitride layer over the dielectric layer and the gate; and etching back the silicon oxynitride layer until the silicon oxynitride layer has a top surface lower than the top surface of the dielectric layer.
Claim 14
Dependent Claim
78 words
A salicide process, comprising: providing a gate with a sidewall over a substrate; forming a spacer on the sidewall of the gate; forming a mask pattern exposing the edge of the gate; etching the gate to form a reversed T-shaped gate by using the mask pattern as an etching mask, whereby the edge of the reversed T-shaped gate are substantially lower than the center of the gate; and forming a self-aligned silicide film over the reversed T-shaped gate.
Claim 15
Dependent Claim
78 words
A salicide process, comprising: providing a gate with a sidewall over a substrate; forming a spacer on the sidewall of the gate; forming a mask pattern exposing the edge of the gate; etching the gate to form a reversed T-shaped gate by using the mask pattern as an etching mask, whereby the edge of the reversed T-shaped gate are substantially lower than the center of the gate; and forming a self-aligned silicide film over the reversed T-shaped gate.
Claim 16
Dependent Claim
14 words
The process of claim 13, wherein the mask pattern is made of silicon oxynitride.
Claim 17
Dependent Claim
26 words
The process of claim 13, further comprising the step of forming a dielectric layer surrounding the first spacer over the substrate before forming the mask pattern.
Claim 18
Dependent Claim
14 words
The process of claim 15, wherein the dielectric layer is made of silicon nitride.
Claim 19
Dependent Claim
49 words
The process of claim 15, wherein the formation of the dielectric layer comprises: depositing a dielectric material layer over the substrate, wherein the dielectric material layer has a top surface higher than a top surface of the gate; and chemical-mechanical polishing the dielectric layer until the gate is exposed.
Claim 20
Dependent Claim
48 words
The process of claim 15, wherein the formation of the mask pattern comprises: depositing a silicon oxynitride layer over the dielectric layer and the gate; and over-polishing the silicon oxynitride layer over the dielectric layer, thereby accomplishing the formation of the mask pattern that partially fills the opening.
Claim 21
Dependent Claim
50 words
The process of claim 15, wherein the formation of the mask pattern comprises: depositing a silicon oxynitride layer over the dielectric layer and the gate; and etching back the silicon oxynitride layer until the silicon oxynitride layer has a top surface lower than the top surface of the dielectric layer.
Claim 22
Dependent Claim
22 words
The process of claim 13, wherein the gate has a thickness of about 4000 to about 5000 angstroms before being partially removed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-30 | 2003-11-29 | 2004-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-30 | 2007-11-29 | 2008-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-30 | 2011-11-29 | 2012-05-30 | $7700.00 | Window Closed / Lapsed |