US6066866A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with alternating general-purpose functional regions and specific functional regions
Assignee: Mitsubishi Electric Corp
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Filing: 1998-06-09
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Granted: 2000-05-23
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Expires: 2018-06-09
Abstract
Abstract When constructing a number of transistors in transistor forming region (1) on a semiconductor substrate, a plurality of specific functional regions and a plurality of general-purpose functional regions are formed in the transistor forming region (1) in such a way that each of the plurality of specific functional regions alternates with each of the plurality of general-purpose functional regions. Each of the plurality of general-purpose functional regions is comprised of at least one general-purpose functional bank (4) including a row of P-channel field-effect transistors and a row of N-channel field-effect transistors. Each of the plurality of specific functional regions is comprised of at least one specific functional bank (5) including a row of functional blocks (6) each of which can perform a specific function.
Inventors
- 👤 Naoko Omori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:17
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/903; H10D84/907
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
143 words
A semiconductor device comprising: a semiconductor substrate on which a plurality of specific functional regions, wherein each of said plurality of specific functional regions is comprised of at least one specific functional bank including a row of functional blocks which are each provided with a plurality of first transistors and second transistors of a size different than said first transistors, and a plurality of general-purpose functional regions, wherein each of said plurality of general-purpose functional regions is comprised of at least one general-purpose functional bank provided with a plurality of third transistors including a row of P-channel field-effect transistors and a row of N-channel field-effect transistors, are formed in such a way that each of said plurality of specific functional regions alternates with each of said plurality of general-purpose functional regions, wherein said first transistors are smaller in size than said third transistors.
Claim 2
Dependent Claim
143 words
A semiconductor device comprising: a semiconductor substrate on which a plurality of specific functional regions, wherein each of said plurality of specific functional regions is comprised of at least one specific functional bank including a row of functional blocks which are each provided with a plurality of first transistors and second transistors of a size different than said first transistors, and a plurality of general-purpose functional regions, wherein each of said plurality of general-purpose functional regions is comprised of at least one general-purpose functional bank provided with a plurality of third transistors including a row of P-channel field-effect transistors and a row of N-channel field-effect transistors, are formed in such a way that each of said plurality of specific functional regions alternates with each of said plurality of general-purpose functional regions, wherein said first transistors are smaller in size than said third transistors.
Claim 3
Dependent Claim
49 words
The semiconductor device according to claim 1, wherein in each general-purpose functional bank, a direction in which said rows of P-channel and N-channel field-effect transistors are aligned is parallel to a direction in which the length of the gate electrodes of the P-channel and N-channel field-effect transistors is oriented.
Claim 4
Dependent Claim
49 words
The semiconductor device according to claim 1, wherein in each general-purpose functional bank, a direction in which said rows of P-channel and N-channel field-effect transistors are arranged is orthogonal to a direction in which the length of the gate electrodes of the P-channel and N-channel field-effect transistors is oriented.
Claim 5
Dependent Claim
24 words
The semiconductor device according to claim 1, wherein said row of functional blocks is a flip-flop and said flip-flop is a set-reset scan flip-flop.
Claim 6
Dependent Claim
21 words
The semiconductor device according to claim 1, wherein at least one common signal is applied to said row of functional blocks.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-23 | 2003-11-22 | 2004-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-23 | 2007-11-22 | 2008-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-23 | 2011-11-22 | 2012-05-23 | $7700.00 | Window Closed / Lapsed |