US6066511A
Expired / Lapsed
US
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Manufacturing method for a solid state imaging device
Assignee: Sony Corp
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Filing: 1996-08-21
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Granted: 2000-05-23
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Expires: 2016-08-21
Abstract
Abstract A solid-state imaging device Comprising a photosensing portion for performing opto-electric conversion and a light shielding film formed so as not to cover a photosensing surface of the photosensing portion. An overcoat layer formed of a first transparent material is formed so as to cover the photosensing surface of the photosensing portion, and a recessed portion is formed in the overcoat layer at a position just above the photosensing surface. The recessed portion has a top surface having a concavity toward the photosensing surface. A lens portion formed of a second transparent material having a refractive index higher than that of the first transparent material is embedded in the recessed portion.
Inventors
- 👤 Takashi Fukusyo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:44
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F39/00; H10F39/80; H10F39/806; H10F39/8063; H10F39/011; H10F39/024; H10F39/10; H10F39/12; H10F39/15; H10F39/151; H10F39/1515; H10F39/156
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
94 words
A method of manufacturing a solid state imaging device comprising the steps of: providing a semiconductor body having a photosensing portion thereon; applying a first layer having a first index of refraction to said semiconductor body, said first layer having a recessed portion above said photosensing portion, said recessed portion having a top surface having a concavity toward said photosensing portion; and embedding a material having a second index of refraction to form a first lens portion in said recessed portion, said first lens portion having a bottom surface convex toward said photosensing portion.
Claim 2
Independent Claim
94 words
A method of manufacturing a solid state imaging device comprising the steps of: providing a semiconductor body having a photosensing portion thereon; applying a first layer having a first index of refraction to said semiconductor body, said first layer having a recessed portion above said photosensing portion, said recessed portion having a top surface having a concavity toward said photosensing portion; and embedding a material having a second index of refraction to form a first lens portion in said recessed portion, said first lens portion having a bottom surface convex toward said photosensing portion.
Claim 3
Dependent Claim
34 words
A method according to claim 1, wherein said step of embedding comprises a step of applying a second layer of said material to said first layer and planarizing a surface of said second layer.
Claim 4
Dependent Claim
16 words
A method according to claim 2, wherein said planarizing step comprises a step of chemical-mechanical polishing.
Claim 5
Dependent Claim
22 words
A method according to claim 1, wherein said step of applying said first layer comprises applying a silicon oxide film by CVD.
Claim 6
Dependent Claim
21 words
A method according to claim 1, further comprising a step of forming a second lens layer over said first lens portion.
Claim 7
Dependent Claim
21 words
A method according to claim 1 further comprising a step of forming a color filter layer over said first lens portion.
Claim 8
Dependent Claim
12 words
A method according to claim 1 wherein said second layer is silicon-nitride.
Claim 9
Dependent Claim
15 words
A method according to claim 7, wherein said second layer is applied by plasma CVD.
Claim 10
Dependent Claim
75 words
A method according to claim 1, wherein said step of providing a semiconductor body further comprises a step of providing a semiconductor body comprising a transfer register adjacent to said photosensing portion, a transfer electrode over said transfer register and a light shielding film over said transfer electrode; and further wherein said step of applying said first layer comprises a step of applying said first layer over said light shielding film and said photosensing portion.
Claim 11
Dependent Claim
35 words
A method according to claim 9, wherein said recessed portion of said first layer is formed in a self-aligned manner so as to correspond to the shape of the surface of said light shielding film.
Claim 12
Independent Claim
150 words
A method of manufacturing a solid state imaging device comprising the steps of: providing a semiconductor body having a photosensing portion, a transfer register adjacent to said photosensing portion, a transfer electrode over said transfer register and a light shielding film over said transfer electrode; applying a first layer having a first index of refraction over said light shielding film and said photosensing portion, said first layer having a recessed portion above said photosensing portion, wherein said recessed portion of said first layer is formed in a self-aligned manner so as to correspond to the shape of the surface of said light shielding film, said recessed portion having a top surface convex toward said photosensing portion; and embedding a material having a second index of refraction higher than said first index to form a first lens portion, said first lens portion having a bottom surface convex toward said photosensing portion.
Claim 13
Independent Claim
150 words
A method of manufacturing a solid state imaging device comprising the steps of: providing a semiconductor body having a photosensing portion, a transfer register adjacent to said photosensing portion, a transfer electrode over said transfer register and a light shielding film over said transfer electrode; applying a first layer having a first index of refraction over said light shielding film and said photosensing portion, said first layer having a recessed portion above said photosensing portion, wherein said recessed portion of said first layer is formed in a self-aligned manner so as to correspond to the shape of the surface of said light shielding film, said recessed portion having a top surface convex toward said photosensing portion; and embedding a material having a second index of refraction higher than said first index to form a first lens portion, said first lens portion having a bottom surface convex toward said photosensing portion.
Claim 14
Dependent Claim
31 words
A method according to claim 11, wherein said step of embedding comprises applying a second layer of said material to said first layer and planiarizing a surface of said second layer.
Claim 15
Dependent Claim
16 words
A method according to claim 12, wherein said planarizing step comprises a step of chemical-mechanical polishing.
Claim 16
Dependent Claim
16 words
A method according to claim 11, wherein said first layer is silicon oxide applied by CVD.
Claim 17
Dependent Claim
19 words
A method according to claim 11, further comprising a step of forming a lens layer over the lens portion.
Claim 18
Dependent Claim
21 words
A method according to claim 11, further comprising a step of forming a color filter layer over said first lens portion.
Claim 19
Dependent Claim
12 words
A method according to claim 11, wherein said second layer is silicon-nitride.
Claim 20
Dependent Claim
15 words
A method according to claim 17, wherein said second layer is applied by plasma CVD.
Claim 21
Dependent Claim
34 words
A method according to claim 13, wherein said second layer is planarized so that said second layer remains only in said recessed portion and said first layer is exposed except at said recessed portion.
Claim 22
Independent Claim
210 words
A method of manufacturing a solid state imaging device comprising the steps of: providing a semiconductor body having a photosensing portion, a transfer register adjacent to said photosensing portion, and a transfer electrode over said transfer register and a light shielding film over said transfer electrode; applying a first layer of silicon oxide having a first index of refraction by CVD over said light shielding film and said photosensing portion, said first layer having a recessed portion above said photosensing portion and wherein said recessed portion of said first layer is formed in a self-aligned manner so as to correspond to the shape of the surface of said shielding film, said recessed portion having a top surface having a concavity toward said photosensing portion; and embedding a material having a second index of refraction higher than said first index to form a first lens portion in said recessed portion by applying a second layer of silicon-nitride by plasma CVD to said first layer and planarizing a surface of said second layer by chemical mechanical polishing so that the second layer remains only in the recessed portion and the first layer is exposed except at the recessed portion, said first lens portion having a bottom surface convex toward said photosensing portion.
Claim 23
Independent Claim
210 words
A method of manufacturing a solid state imaging device comprising the steps of: providing a semiconductor body having a photosensing portion, a transfer register adjacent to said photosensing portion, and a transfer electrode over said transfer register and a light shielding film over said transfer electrode; applying a first layer of silicon oxide having a first index of refraction by CVD over said light shielding film and said photosensing portion, said first layer having a recessed portion above said photosensing portion and wherein said recessed portion of said first layer is formed in a self-aligned manner so as to correspond to the shape of the surface of said shielding film, said recessed portion having a top surface having a concavity toward said photosensing portion; and embedding a material having a second index of refraction higher than said first index to form a first lens portion in said recessed portion by applying a second layer of silicon-nitride by plasma CVD to said first layer and planarizing a surface of said second layer by chemical mechanical polishing so that the second layer remains only in the recessed portion and the first layer is exposed except at the recessed portion, said first lens portion having a bottom surface convex toward said photosensing portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-23 | 2003-11-22 | 2004-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-23 | 2007-11-22 | 2008-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-23 | 2011-11-22 | 2012-05-23 | $7700.00 | Window Closed / Lapsed |