Semiconductor device

Claim 2

A semiconductor device comprising: an organic substrate having a sealing side; a semiconductor chip mounted on the organic substrate; bonding wires connected to the semiconductor chip; a copper sheet having an aperture provided therein at a bonding area, positioned so that the cooper sheet clears the semiconductor chip and the bonding wires; an adhesive layer bonding the copper sheet to the sealing side of the organic substrate; and a grounding layer provided within the organic substrate, wherein the organic substrate has through holes and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 3

A semiconductor device according to claim 1, further comprising grounding terminals of a spot shape provided on the copper sheet about the aperture.

Claim 4

A semiconductor device, comprising: an organic substrate having a sealing side, a side edge, and a rear side opposite the sealing side; a semiconductor chip mounted on the organic substrate; bonding wires connected to the semiconductor chip; a copper sheet having an aperture provided therein at a bonding area, positioned so that the copper sheet clears the semiconductor chip and the bonding wires, the copper sheet further having peripheral extensions mechanically folded downwardly and toward the rear side of the organic substrate so as to cover the side edge of the organic substrate; and an adhesive layer bonding the copper sheet to the sealing side of the organic substrate.

Claim 5

A semiconductor device, comprising: an organic substrate having a sealing side, a side edge, and a rear side opposite the sealing side; a semiconductor chip mounted on the organic substrate; bonding wires connected to the semiconductor chip; a copper sheet having an aperture provided therein at a bonding area, positioned so that the copper sheet clears the semiconductor chip and the bonding wires, the copper sheet further having peripheral extensions mechanically folded downwardly and toward the rear side of the organic substrate so as to cover the side edge of the organic substrate; and an adhesive layer bonding the copper sheet to the sealing side of the organic substrate.

Claim 6

A semiconductor device according to claim 3, further comprising a grounding layer provided within the organic substrate, wherein the organic substrate has through holes and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 7

A semiconductor device according to claim 4, further comprising connection terminals on the folded peripheral extensions of the copper sheet.

Claim 8

A semiconductor device, comprising: an organic substrate having a sealing side; a semiconductor chip mounted on the organic substrate; bonding wires connected to the semiconductor chip; a copper sheet having a bonding wire area for the bonding wires and an aperture at the bonding wire area; a die pad formed integrally on the copper sheet, supporting the semiconductor chip, the aperture being positioned so as to clear the bonding wires; a first adhesive layer bonding the copper sheet to the sealing side of the organic substrate; a second adhesive layer bonding the semiconductor chip to the die pad; and a grounding layer within the organic substrate, wherein the organic substrate has through holes therein and the copper sheet is electrically connected along the through holes to the grounding layer.

Claim 9

A semiconductor device, comprising: an organic substrate having a sealing side; a semiconductor chip mounted on the organic substrate; bonding wires connected to the semiconductor chip; a copper sheet having a bonding wire area for the bonding wires and an aperture at the bonding wire area; a die pad formed integrally on the copper sheet, supporting the semiconductor chip, the aperture being positioned so as to clear the bonding wires; a first adhesive layer bonding the copper sheet to the sealing side of the organic substrate; a second adhesive layer bonding the semiconductor chip to the die pad; and a grounding layer within the organic substrate, wherein the organic substrate has through holes therein and the copper sheet is electrically connected along the through holes to the grounding layer.

Claim 10

A semiconductor device according to claim 6, further comprising connection terminals of a spot shape for grounding, disposed on the copper sheet about the aperture.

Claim 11

A semiconductor device, comprising: an organic substrate having a sealing side, a rear side opposite the sealing sides and a side edge; a semiconductor chip mounted on the organic substrate, bonding wires connected to the semiconductor chip; a copper sheet having a bonding wire area for the bonding wires and an aperture at the bonding wire area, the copper sheet further having peripheral extensions mechanically folded downwardly and towards the rear side of the organic substrate so as to cover the side edge of the organic substrate; a die pad formed integrally on the copper sheet, supporting the semiconductor chip, the aperture being positioned so as to clear the bonding wires; a first adhesive layer bonding the copper sheet to the sealing side of the organic substrate; and a second adhesive layer bonding the semiconductor chip to the die pad.

Claim 12

A semiconductor device, comprising: an organic substrate having a sealing side, a rear side opposite the sealing sides and a side edge; a semiconductor chip mounted on the organic substrate, bonding wires connected to the semiconductor chip; a copper sheet having a bonding wire area for the bonding wires and an aperture at the bonding wire area, the copper sheet further having peripheral extensions mechanically folded downwardly and towards the rear side of the organic substrate so as to cover the side edge of the organic substrate; a die pad formed integrally on the copper sheet, supporting the semiconductor chip, the aperture being positioned so as to clear the bonding wires; a first adhesive layer bonding the copper sheet to the sealing side of the organic substrate; and a second adhesive layer bonding the semiconductor chip to the die pad.

Claim 13

A semiconductor device according to claim 8, further comprising a grounding layer within the organic substrate, wherein the organic substrate has through holes therein and the copper sheet is electrically connected along the through holes to the grounding layer.

Claim 14

A semiconductor device according to claim 9, further comprising connection terminals on the folded peripheral extensions of the copper sheet.

Claim 15

A semiconductor device comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate; a semiconductor chip mounted on the substrate and having a plurality of electrodes which are electrically connected to the wiring pattern; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed around the semiconductor chip; a sealing resin disposed over said semiconductor chip and over said copper sheet so as to seal said semiconductor chip and said copper sheet, said sealing resin being in direct contact with said copper sheet at substantially all locations said sealing resin is disposed over said copper sheet; and a grounding layer provided within the substrate, wherein the substrate has through holes and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 16

A semiconductor device comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate; a semiconductor chip mounted on the substrate and having a plurality of electrodes which are electrically connected to the wiring pattern; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed around the semiconductor chip; a sealing resin disposed over said semiconductor chip and over said copper sheet so as to seal said semiconductor chip and said copper sheet, said sealing resin being in direct contact with said copper sheet at substantially all locations said sealing resin is disposed over said copper sheet; and a grounding layer provided within the substrate, wherein the substrate has through holes and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 17

A semiconductor device according to claim 11, further comprising grounding terminals of a spot shape provided on the copper sheet and about the semiconductor chip.

Claim 18

A semiconductor device, comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate; a semiconductor chip mounted on the substrate and having a plurality of electrodes which are electrically connected to the wiring pattern; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed around the semiconductor chip; and a sealing resin disposed over said semiconductor chip and over said copper sheet so as to seal said semiconductor chip and said copper sheet, said sealing resin being in direct contact with said copper sheet at substantially all locations said sealing resin is disposed over said copper sheet, wherein the substrate has a side edge, and has a rear side opposite the principal surface, and wherein the copper sheet has peripheral extensions mechanically folded downwardly and toward the rear side of the substrate so as to cover the side edge of the substrate.

Claim 19

A semiconductor device, comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate; a semiconductor chip mounted on the substrate and having a plurality of electrodes which are electrically connected to the wiring pattern; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed around the semiconductor chip; and a sealing resin disposed over said semiconductor chip and over said copper sheet so as to seal said semiconductor chip and said copper sheet, said sealing resin being in direct contact with said copper sheet at substantially all locations said sealing resin is disposed over said copper sheet, wherein the substrate has a side edge, and has a rear side opposite the principal surface, and wherein the copper sheet has peripheral extensions mechanically folded downwardly and toward the rear side of the substrate so as to cover the side edge of the substrate.

Claim 20

A semiconductor device according to claim 13, further comprising a grounding layer provided within the substrate, wherein the substrate has through holes, and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 21

A semiconductor device according to claim 14, further comprising connection terminals on the folded peripheral extensions of the copper sheet.

Claim 22

A semiconductor device comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate, said wiring pattern having a bonding portion; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed over substantially an entirety of the principal surface except for an area corresponding to the bonding portion of the wiring pattern; a semiconductor chip mounted on the copper sheet and having a plurality of electrodes which are electrically connected to the bonding portion of the wiring pattern; a sealing resin sealing the semiconductor chip and the copper sheet; and a grounding layer provided within the substrate, wherein the substrate has through holes and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 23

A semiconductor device comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate, said wiring pattern having a bonding portion; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed over substantially an entirety of the principal surface except for an area corresponding to the bonding portion of the wiring pattern; a semiconductor chip mounted on the copper sheet and having a plurality of electrodes which are electrically connected to the bonding portion of the wiring pattern; a sealing resin sealing the semiconductor chip and the copper sheet; and a grounding layer provided within the substrate, wherein the substrate has through holes and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 24

A semiconductor device according to claim 16, further comprising grounding terminals of a spot shape provided on the copper sheet and about the semiconductor chip.

Claim 25

A semiconductor device, comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate, said wiring pattern having a bonding portion; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed over substantially an entirety of the principal surface except for an area corresponding to the bonding portion of the wiring pattern; a semiconductor chip mounted on the copper sheet and having a plurality of electrodes which are electrically connected to the bonding portion of the wiring pattern; and a sealing resin sealing the semiconductor chin and the copper sheet, wherein the substrate has a side edge, and has a rear side opposite the principal surface, and wherein the copper sheet has peripheral extensions mechanically folded downwardly and toward the rear side of the substrate so as to cover a side edge of the substrate.

Claim 26

A semiconductor device, comprising: a substrate having a principal surface; a wiring pattern formed on the principal surface of the substrate, said wiring pattern having a bonding portion; a copper sheet fixed on the wiring pattern using an adhesive layer which insulates the copper sheet and the wiring pattern, said copper sheet being formed over substantially an entirety of the principal surface except for an area corresponding to the bonding portion of the wiring pattern; a semiconductor chip mounted on the copper sheet and having a plurality of electrodes which are electrically connected to the bonding portion of the wiring pattern; and a sealing resin sealing the semiconductor chin and the copper sheet, wherein the substrate has a side edge, and has a rear side opposite the principal surface, and wherein the copper sheet has peripheral extensions mechanically folded downwardly and toward the rear side of the substrate so as to cover a side edge of the substrate.

Claim 27

A semiconductor device according to claim 18, further comprising a grounding layer provided within the substrate, wherein the substrate has through holes, and the copper sheet is electrically connected to the grounding layer along the through holes.

Claim 28

A semiconductor device according to claim 19, further comprising connection terminals on the folded peripheral extensions of the copper sheet.