US6060739A
Expired / Lapsed
US
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Non-volatile semiconductor memory device having a floating gate inside a grove
Assignee: Renesas Electronics Corp
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Filing: 1997-09-23
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Granted: 2000-05-09
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Expires: 2017-09-23
Abstract
Abstract A semiconductor well region has a groove into which a block-shaped floating gate is formed. The block-shaped floating gate has a bottom surface facing a bottom surface of the semiconductor well region served as a first channel region, a first side surface facing one of side surfaces of the semiconductor well region served as a second channel region, a second side surface facing the other of side surfaces of the semiconductor well region served as a third channel region, thereby a channel width is trebled.
Inventors
- 👤 Kenji Saitoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:20
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/6891; H10B69/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
332 words
A non-volatile semiconductor memory device comprising: a semiconductor well region of a first conductivity type having a groove, said semiconductor well region having a bottom surface which defines a bottom of said groove, a first side surface which defines one side of said groove, and a second side surface which defines the other side of said groove, said groove having first, second and third areas, each extending between said first side surface and said second side surface, said third area of said groove being interposed between said first and second areas of said groove; a floating gate electrode formed in said third area of said groove, said floating gate electrode having a top surface, a bottom surface, a first side surface, and a second side surface; a first dielectric film intervening between said bottom surface of said semiconductor well region at said third area of said groove and said bottom surface of said floating gate electrode; a second dielectric film intervening between said first side surface of said semiconductor well region at said third area of said groove and said first side surface of said floating gate electrode; a third dielectric film intervening between said second side surface of said semiconductor well region at said third area of said groove and said second side surface of said floating gate electrode; a fourth dielectric film formed on said top surface of said floating gate electrode; a first diffusion region of a second conductivity type formed in said bottom, first and second side surfaces of said semiconductor well region at said first area of said groove; a second diffusion region of said second conductivity type formed in said bottom, first and second side surfaces of said semiconductor well region at said second area of said groove; and a control gate electrode formed on said fourth dielectric film, each of said bottom, first and second side surfaces of said semiconductor well region at said third area of said groove being served as a channel region.
Claim 2
Dependent Claim
332 words
A non-volatile semiconductor memory device comprising: a semiconductor well region of a first conductivity type having a groove, said semiconductor well region having a bottom surface which defines a bottom of said groove, a first side surface which defines one side of said groove, and a second side surface which defines the other side of said groove, said groove having first, second and third areas, each extending between said first side surface and said second side surface, said third area of said groove being interposed between said first and second areas of said groove; a floating gate electrode formed in said third area of said groove, said floating gate electrode having a top surface, a bottom surface, a first side surface, and a second side surface; a first dielectric film intervening between said bottom surface of said semiconductor well region at said third area of said groove and said bottom surface of said floating gate electrode; a second dielectric film intervening between said first side surface of said semiconductor well region at said third area of said groove and said first side surface of said floating gate electrode; a third dielectric film intervening between said second side surface of said semiconductor well region at said third area of said groove and said second side surface of said floating gate electrode; a fourth dielectric film formed on said top surface of said floating gate electrode; a first diffusion region of a second conductivity type formed in said bottom, first and second side surfaces of said semiconductor well region at said first area of said groove; a second diffusion region of said second conductivity type formed in said bottom, first and second side surfaces of said semiconductor well region at said second area of said groove; and a control gate electrode formed on said fourth dielectric film, each of said bottom, first and second side surfaces of said semiconductor well region at said third area of said groove being served as a channel region.
Claim 3
Dependent Claim
35 words
The non-volatile semiconductor memory device as claimed in claim 1, wherein each of said first and second side surfaces of said semiconductor well region is perpendicular to said bottom surface of said semiconductor well region.
Claim 4
Dependent Claim
26 words
The non-volatile semiconductor memory device as claimed in claim 1, wherein said groove and said control gate electrode extends to the same direction as each other.
Claim 5
Dependent Claim
81 words
The non-volatile semiconductor memory device as claimed in claim 1, further comprising a plurality of word lines, a plurality of bit lines crossing to said word lines, and a plurality of source lines arranged parallel to said bit lines, said first diffusion region being connected to an associated one of said bit lines, said second diffusion region being connected to an associated one of said source lines, said control gate electrode being connected to an associated one of said word lines.
Claim 6
Dependent Claim
35 words
The non-volatile semiconductor memory device as claimed in claim 1, wherein said groove has a first depth, said first diffusion region has a second depth , said second depth being larger than said first depth.
Claim 7
Dependent Claim
158 words
A non-volatile semiconductor memory device comprising; a semiconductor substrate including first and second side surfaces and a bottom surface, the surfaces together defining a groove in the semiconductor substrate; an array of memory cells each having a control gate, a floating gate, a drain region, a source region, and a channel region interposed between said drain and source regions the source region, channel region and drain region each comprising the first and second side surfaces and the bottom surface of the groove; a plurality of word lines, each extending in a first direction across the array of memory cells and comprising control gates of said memory cells; a plurality of bit lines, each extending in a second direction across the array of memory cells and comprising drain regions of said memory cells; and a plurality of source lines, each extending in the second direction across the array of memory cells and comprising source regions of the memory cells.
Claim 8
Dependent Claim
158 words
A non-volatile semiconductor memory device comprising; a semiconductor substrate including first and second side surfaces and a bottom surface, the surfaces together defining a groove in the semiconductor substrate; an array of memory cells each having a control gate, a floating gate, a drain region, a source region, and a channel region interposed between said drain and source regions the source region, channel region and drain region each comprising the first and second side surfaces and the bottom surface of the groove; a plurality of word lines, each extending in a first direction across the array of memory cells and comprising control gates of said memory cells; a plurality of bit lines, each extending in a second direction across the array of memory cells and comprising drain regions of said memory cells; and a plurality of source lines, each extending in the second direction across the array of memory cells and comprising source regions of the memory cells.
Claim 9
Dependent Claim
26 words
The non-volatile semiconductor memory device as claimed in claim 6, wherein said floating gate is interposed between said first and second side surfaces of the groove.
Claim 10
Dependent Claim
67 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate defining a groove; first and second diffusion regions formed in surfaces defining the groove and extending between opposing edges of the groove; a floating gate electrode filling the groove between the first and second diffusion regions; and a control gate electrode formed on the floating gate electrode and separated from the floating gate electrode by an insulating film.
Claim 11
Dependent Claim
67 words
A non-volatile semiconductor memory device comprising: a semiconductor substrate defining a groove; first and second diffusion regions formed in surfaces defining the groove and extending between opposing edges of the groove; a floating gate electrode filling the groove between the first and second diffusion regions; and a control gate electrode formed on the floating gate electrode and separated from the floating gate electrode by an insulating film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-09 | 2003-11-08 | 2004-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-09 | 2007-11-08 | 2008-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-09 | 2011-11-08 | 2012-05-09 | $7700.00 | Window Closed / Lapsed |