US6054334A
Expired / Lapsed
US
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Methods and structures for pad reconfiguration to allow intermediate testing during manufacture of an integrated circuit
Assignee: Round Rock Research LLC
•
Filing: 1997-09-12
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Granted: 2000-04-25
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Expires: 2017-09-12
Abstract
Abstract Methods and structures for pad reconfiguration to allow intermediate testing during the manufacture of an integrated circuit are disclosed. The methods and structures disclosed are particularly useful in testing an embedded subcircuit, such as a memory array within an embedded chip product. A bond pad reconfiguration etch and other means for reconfiguring a bond pad are also disclosed.
Inventors
- 👤 Manny Kin F. Ma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:45
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10P; H10P74/00; H10P74/27; H10P74/273; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 74
Claim 1
Independent Claim
105 words
A method for fabricating an integrated circuit, the integrated circuit including a surface, comprising the steps of: (a) forming a first layer on the surface; (b) forming a second layer over at least a portion of the first layer; (c) forming an opening in the second layer over the first layer; (d) forming a third layer within the opening; (e) forming a fourth layer over the second layer and over the third layer; (f) removing at least a portion of the fourth layer that overlies the opening; (g) removing the third layer from within the opening; and (i) removing the first layer below the opening.
Claim 2
Independent Claim
105 words
A method for fabricating an integrated circuit, the integrated circuit including a surface, comprising the steps of: (a) forming a first layer on the surface; (b) forming a second layer over at least a portion of the first layer; (c) forming an opening in the second layer over the first layer; (d) forming a third layer within the opening; (e) forming a fourth layer over the second layer and over the third layer; (f) removing at least a portion of the fourth layer that overlies the opening; (g) removing the third layer from within the opening; and (i) removing the first layer below the opening.
Claim 3
Dependent Claim
11 words
The method of claim 1, wherein the steps are performed sequentially.
Claim 4
Dependent Claim
58 words
The method of claim 1, wherein the step of forming the first layer includes forming a first conductive layer, the step of forming the third layer includes forming a second conductive layer, the step of forming the fourth layer includes forming a third conductive layer, and the step of forming the second layer includes forming a dielectric layer.
Claim 5
Dependent Claim
26 words
The method of claim 3, wherein the steps of forming the third layer and the fourth layer include forming the third layer and fourth layer simultaneously.
Claim 6
Dependent Claim
31 words
The method of claim 4, wherein the steps of removing the third layer and the fourth layer include removing the third layer and the fourth layer using a single etching step.
Claim 7
Dependent Claim
22 words
The method of claim 4, wherein the simultaneous formation includes the formation of a material comprised at least in part of aluminum.
Claim 8
Dependent Claim
36 words
The method of claim 3, wherein the steps of forming the first layer, the third layer and the fourth layer include forming the first layer, the third layer and the fourth layer of the same material.
Claim 9
Dependent Claim
37 words
The method of claim 7, wherein the steps of removing the fourth layer, the third layer and the first layer include removing the fourth layer, the third layer and the first layer using a single etching step.
Claim 10
Dependent Claim
25 words
The method of claim 7, wherein the formation of the same material includes the formation of a material comprised at least in part of aluminum.
Claim 11
Dependent Claim
25 words
The method of claim 3, wherein the formation of the third layer includes the formation of a material comprised at least in part of tungsten.
Claim 12
Dependent Claim
31 words
The method of claim 1, wherein the formation of the first layer includes the formation of a lead, and wherein the step of removing the first material includes severing the lead.
Claim 13
Dependent Claim
27 words
The method of claim 1, wherein the formation of either the first layer, the third layer or the fourth layer includes the formation of a composite layer.
Claim 14
Independent Claim
105 words
A method for severing a lead formed in a first conductive layer on an integrated circuit, comprising: (a) forming a dielectric over at least a portion of the lead; (b) forming an opening in the dielectric over a portion of the lead; (c) forming a second conductive layer within the opening; (d) forming a third conductive layer over at least a portion of the dielectric and over the second conductive layer; (e) removing the third conductive layer overlying the opening; (f) removing the second conductive layer from within the opening; and (g) removing the portion of the lead underneath the opening, thereby severing the lead.
Claim 15
Independent Claim
105 words
A method for severing a lead formed in a first conductive layer on an integrated circuit, comprising: (a) forming a dielectric over at least a portion of the lead; (b) forming an opening in the dielectric over a portion of the lead; (c) forming a second conductive layer within the opening; (d) forming a third conductive layer over at least a portion of the dielectric and over the second conductive layer; (e) removing the third conductive layer overlying the opening; (f) removing the second conductive layer from within the opening; and (g) removing the portion of the lead underneath the opening, thereby severing the lead.
Claim 16
Dependent Claim
11 words
The method of claim 13, wherein the steps are performed sequentially.
Claim 17
Dependent Claim
31 words
The method of claim 13, wherein the steps of forming the second conductive layer and the third conductive layer include forming the second conductive layer and the third conductive layer simultaneously.
Claim 18
Dependent Claim
35 words
The method of claim 15, wherein the steps of removing the second conductive layer and the third conductive layer include removing the second conductive layer and the third conductive layer using a single etching step.
Claim 19
Dependent Claim
22 words
The method of claim 15, wherein the simultaneous formation includes the formation of a material comprised at least in part of aluminum.
Claim 20
Dependent Claim
42 words
The method of claim 13, wherein the steps of forming the first conductive layer, the second conductive layer and the third conductive layer include forming the first conductive layer, the second conductive layer and the third conductive layer of the same material.
Claim 21
Dependent Claim
43 words
The method of claim 18, wherein the steps of removing the first conductive layer, the second conductive layer and the third conductive layer include removing the first conductive layer, the second conductive layer and the third conductive layer using a single etching step.
Claim 22
Dependent Claim
25 words
The method of claim 18, wherein the formation of the same material includes the formation of a material comprised at least in part of aluminum.
Claim 23
Dependent Claim
27 words
The method of claim 13, wherein the step of forming the second conductive layer includes the formation of a material comprised at least in part of tungsten.
Claim 24
Dependent Claim
30 words
The method of claim 13, wherein the formation of either the first conductive layer, the second conductive layer, or the third conductive layer includes the formation of a composite layer.
Claim 25
Independent Claim
211 words
A method for severing a first lead formed in a first conductive layer from a first structure and for connecting the first lead to a second structure formed in a third conductive layer, comprising: (a) forming a dielectric over at least a part of the first lead; (b) forming an opening in the dielectric over a first portion of the first lead and forming a via in the dielectric over a second portion of the first lead, the first portion being located between the second portion and the first structure; (c) forming a second conductive layer within the opening and within the via; (d) forming the third conductive layer over the dielectric and over the second conductive layer within both the via and the opening; (e) removing the third conductive layer overlying the second conductive layer within the opening to expose the second conductive layer within the opening; (f) removing the second conductive layer from within the opening; (g) removing the first portion of the lead which underlies the opening, thereby severing the first lead from the first structure; (h) removing a portion of the third conductive layer to form the second structure, the second structure being in communication with the via, thereby connecting the second structure to the first lead.
Claim 26
Independent Claim
211 words
A method for severing a first lead formed in a first conductive layer from a first structure and for connecting the first lead to a second structure formed in a third conductive layer, comprising: (a) forming a dielectric over at least a part of the first lead; (b) forming an opening in the dielectric over a first portion of the first lead and forming a via in the dielectric over a second portion of the first lead, the first portion being located between the second portion and the first structure; (c) forming a second conductive layer within the opening and within the via; (d) forming the third conductive layer over the dielectric and over the second conductive layer within both the via and the opening; (e) removing the third conductive layer overlying the second conductive layer within the opening to expose the second conductive layer within the opening; (f) removing the second conductive layer from within the opening; (g) removing the first portion of the lead which underlies the opening, thereby severing the first lead from the first structure; (h) removing a portion of the third conductive layer to form the second structure, the second structure being in communication with the via, thereby connecting the second structure to the first lead.
Claim 27
Dependent Claim
11 words
The method of claim 23, wherein the steps are performed sequentially.
Claim 28
Dependent Claim
32 words
The method of claim 23, wherein the steps of forming the second conductive layer and the third conductive layer include forming the second conductive layer and the third is conductive layer simultaneously.
Claim 29
Dependent Claim
35 words
The method of claim 25, wherein the steps of removing the second conductive layer and the third conductive layer include removing the second conductive layer and the third conductive layer using a single etching step.
Claim 30
Dependent Claim
22 words
The method of claim 25, wherein the simultaneous formation includes the formation of a material comprised at least in part of aluminum.
Claim 31
Dependent Claim
42 words
The method of claim 23, wherein the steps of forming the first conductive layer, the second conductive layer and the third conductive layer include forming the first conductive layer, the second conductive layer and the third conductive layer of the same material.
Claim 32
Dependent Claim
42 words
The method of claim 28, wherein the steps of removing the first conductive layer, the second conductive layer and the third conductive include removing the first conductive layer, the second conductive layer and the third conductive layer using a single etching step.
Claim 33
Dependent Claim
25 words
The method of claim 28, wherein the formation of the same material includes the formation of a material comprised at least in part of aluminum.
Claim 34
Dependent Claim
26 words
The method of claim 23, wherein the formation of the second conductive layer includes the formation of a material comprised at least in part of tungsten.
Claim 35
Dependent Claim
18 words
The method of claim 23, wherein steps (e), (f), (g) and (h) are performed using a single etch.
Claim 36
Dependent Claim
16 words
The method of claim 23, wherein steps (e) and (h) are performed using a single etch.
Claim 37
Dependent Claim
17 words
The method of claim 33, wherein steps (e) and (h) are performed before steps (f) and (g).
Claim 38
Dependent Claim
13 words
The method of claim 23, wherein the first structure is a bond pad.
Claim 39
Dependent Claim
13 words
The method of claim 23, wherein the second structure is a second lead.
Claim 40
Dependent Claim
30 words
The method of claim 23, wherein the formation of either the first conductive layer, the second conductive layer, or the third conductive layer includes the formation of a composite layer.
Claim 41
Independent Claim
55 words
A method for electrically testing an integrated circuit, the integrated circuit being partially processed, including a first subcircuit which is fully processed at an intermediate stage during the processing of the integrated circuit and a second subcircuit which is partially processed at said intermediate stage, comprising electrically testing the first subcircuit during the intermediate stage.
Claim 42
Independent Claim
55 words
A method for electrically testing an integrated circuit, the integrated circuit being partially processed, including a first subcircuit which is fully processed at an intermediate stage during the processing of the integrated circuit and a second subcircuit which is partially processed at said intermediate stage, comprising electrically testing the first subcircuit during the intermediate stage.
Claim 43
Dependent Claim
20 words
The method of claim 38, wherein the step of testing the first subcircuit is accomplished by using a multiprobe tester.
Claim 44
Dependent Claim
34 words
The method of claim 39, wherein the step of testing the first subcircuit is accomplished by sending signals from the multiprobe tester to a plurality of intermediate probe pads coupled to the first subcircuit.
Claim 45
Dependent Claim
30 words
The method of claim 40, further comprising the step of disconnecting at least one of the plurality of intermediate probe pads from the first subcircuit after testing the first subcircuit.
Claim 46
Dependent Claim
13 words
The method of claim 41, wherein the step of disconnecting includes chemical etching.
Claim 47
Dependent Claim
15 words
The method of claim 41, wherein the step of disconnecting includes blowing open a fuse.
Claim 48
Dependent Claim
13 words
The method of claim 41, wherein the step of disconnecting includes laser ablation.
Claim 49
Dependent Claim
17 words
The method of claim 41, wherein the step of disconnecting includes the use of an electrical switch.
Claim 50
Dependent Claim
14 words
The method of claim 45, wherein the electrical switch includes at least one transistor.
Claim 51
Dependent Claim
14 words
The method of claim 38, wherein the first subcircuit is an embedded memory array.
Claim 52
Independent Claim
88 words
A method for processing and testing an integrated circuit, the integrated circuit including 1) a first subcircuit which is operational at an intermediate stage during the processing of the integrated circuit, and 2) a second subcircuit which is operational upon completion of the processing of the integrated circuit and which controls the first subcircuit, comprising: (a) processing the integrated circuit to the intermediate stage; (b) electrically testing the subcircuit at the intermediate stage; (c) completing the processing of the integrated circuit; and (d) electrically testing the integrated circuit.
Claim 53
Independent Claim
88 words
A method for processing and testing an integrated circuit, the integrated circuit including 1) a first subcircuit which is operational at an intermediate stage during the processing of the integrated circuit, and 2) a second subcircuit which is operational upon completion of the processing of the integrated circuit and which controls the first subcircuit, comprising: (a) processing the integrated circuit to the intermediate stage; (b) electrically testing the subcircuit at the intermediate stage; (c) completing the processing of the integrated circuit; and (d) electrically testing the integrated circuit.
Claim 54
Dependent Claim
90 words
The method of claim 48, wherein the first subcircuit is connected to a plurality of intermediate probe pads at the intermediate stage, and the second subcircuit is connected to a plurality of final bond pads after processing is completed, and wherein the step of testing the subcircuit at the intermediate stages is accomplished by sending first signals to the intermediate probe pads from a multiprobe tester, and wherein the step of testing the integrated circuit is accomplished by sending second signals to the final bond pads from the multiprobe tester.
Claim 55
Dependent Claim
23 words
The method of claim 49, wherein the plurality of final bond pads overlap at least some of the plurality of intermediate probe pads.
Claim 56
Dependent Claim
35 words
The method of claim 50, wherein the steps of testing the subcircuit at the intermediate stage and testing the integrated circuit include the use of a single probe card in communication with the multiprobe tester.
Claim 57
Dependent Claim
27 words
The method of claim 49, further comprising the step of disconnecting the first subcircuit from at least one of the intermediate probe pads after testing the subcircuit.
Claim 58
Dependent Claim
13 words
The method of claim 52, wherein the step of disconnecting includes chemical etching.
Claim 59
Dependent Claim
15 words
The method of claim 52, wherein the step of disconnecting includes blowing open a fuse.
Claim 60
Dependent Claim
13 words
The method of claim 52, wherein the step of disconnecting includes laser ablation.
Claim 61
Dependent Claim
17 words
The method of claim 52, wherein the step of disconnecting includes the use of an electrical switch.
Claim 62
Dependent Claim
14 words
The method of claim 56, wherein the electrical switch includes at least one transistor.
Claim 63
Dependent Claim
13 words
The method of claim 48, wherein the subcircuit is an embedded memory array.
Claim 64
Independent Claim
149 words
A method for processing and testing of an integrated circuit, comprising: (a) forming first leads on a partially completed integrated circuit to form an operational first subcircuit, the first subcircuit being connected to a plurality of intermediate probe pads; (b) testing the first subcircuit by sending signals to the first subcircuit through the plurality of intermediate probe pads; (c) forming and etching a dielectric layer over at least a portion of the first leads to create a plurality of vias over the first leads; (d) forming second leads over the dielectric layer in communication with the first leads through the plurality of vias to form an operational second subcircuit and to connect the second subcircuit to first subcircuit, the second subcircuit being connected to a plurality of final bond pads; (e) testing the integrated circuit by sending signals to the second subcircuit through the plurality of final bond pads.
Claim 65
Independent Claim
149 words
A method for processing and testing of an integrated circuit, comprising: (a) forming first leads on a partially completed integrated circuit to form an operational first subcircuit, the first subcircuit being connected to a plurality of intermediate probe pads; (b) testing the first subcircuit by sending signals to the first subcircuit through the plurality of intermediate probe pads; (c) forming and etching a dielectric layer over at least a portion of the first leads to create a plurality of vias over the first leads; (d) forming second leads over the dielectric layer in communication with the first leads through the plurality of vias to form an operational second subcircuit and to connect the second subcircuit to first subcircuit, the second subcircuit being connected to a plurality of final bond pads; (e) testing the integrated circuit by sending signals to the second subcircuit through the plurality of final bond pads.
Claim 66
Dependent Claim
23 words
The method of claim 59, wherein the plurality of final bond pads overlap at least some of the plurality of intermediate probe pads.
Claim 67
Dependent Claim
37 words
The method of claim 60, wherein the steps of testing the first subcircuit and the integrated circuit include the use of a single probe card in communication with the intermediate probe pads and the final bond pads.
Claim 68
Dependent Claim
27 words
The method of claim 59, further comprising the step of disconnecting the first subcircuit from the at least one of intermediate probe pads after testing the subcircuit.
Claim 69
Dependent Claim
13 words
The method of claim 62, wherein the step of disconnecting includes chemical etching.
Claim 70
Dependent Claim
15 words
The method of claim 62, wherein the step of disconnecting includes blowing open a fuse.
Claim 71
Dependent Claim
13 words
The method of claim 62, wherein the step of disconnecting includes laser ablation.
Claim 72
Dependent Claim
17 words
The method of claim 62, wherein the step of disconnecting includes the use of an electrical switch.
Claim 73
Dependent Claim
15 words
The method of claim 66, wherein the electrical switch includes at least one transistor .
Claim 74
Dependent Claim
13 words
The method of claim 59, wherein the subcircuit is an embedded memory array.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |