US6051491A
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US
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Multilevel interconnection structure for integrated circuits and method of producing same
Assignee: NEC Electronics Corp
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Filing: 1997-09-26
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Granted: 2000-04-18
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Expires: 2017-09-26
Abstract
Abstract In producing a multilevel interconnection structure, an insulator film is placed on and bonded to interconnecting lines laid on an insulating layer on a semiconductor substrate such that all the spacings between the interconnecting lines are left as vacant spaces. For example, the insulator film is a polyimide film or a silicon oxide film. The vacant spaces serve the purpose of reducing capacitance between adjacent interconnecting lines. After forming contact holes in the insulator film and filling the contact holes with a metal, upper-level interconnecting lines are laid on the insulator film.
Inventors
- 👤 Shinya Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:32
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/01; H10W20/071; H10W20/072; H10W20/45; H10W20/46; H10W20/47; H10W20/48
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
118 words
A method of producing a multilevel interconnection structure useful in semiconductor integrated circuits, comprising the steps of: (a) laying a plurality of first interconnecting lines of a metal on an insulating layer formed on a semiconductor substrate; (b) placing an insulator film on said interconnecting lines; (c) bonding said insulator film to said interconnecting lines by pressure bonding or with an adhesive, such that said film does not intrude into the spacings between said interconnecting lines; (d) forming a contact hole through said insulator film in a region above one of said interconnecting lines and filling said contact hole with a metal; and (e) laying a plurality of second interconnecting lines of a metal on said insulator film.
Claim 2
Independent Claim
118 words
A method of producing a multilevel interconnection structure useful in semiconductor integrated circuits, comprising the steps of: (a) laying a plurality of first interconnecting lines of a metal on an insulating layer formed on a semiconductor substrate; (b) placing an insulator film on said interconnecting lines; (c) bonding said insulator film to said interconnecting lines by pressure bonding or with an adhesive, such that said film does not intrude into the spacings between said interconnecting lines; (d) forming a contact hole through said insulator film in a region above one of said interconnecting lines and filling said contact hole with a metal; and (e) laying a plurality of second interconnecting lines of a metal on said insulator film.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein said insulator film is a film of an organic material selected from the group consisting of polyimides and polytetrafluoroethylene.
Claim 4
Dependent Claim
16 words
A method according to claim 1, wherein said insulator film is a film of silicon oxide.
Claim 5
Dependent Claim
24 words
A method according to claim 3, further comprising the step of reducing the thickness of said insulator film bonded to said first interconnecting lines.
Claim 6
Dependent Claim
62 words
A method according to claim 1, wherein the step (a) comprises the sub-steps of (i) forming a first metal layer on said insulating layer and (ii) patterning the first metal layer to form said first interconnecting lines and the step (e) comprises the sub-steps of (i) forming a second metal layer on said insulator film and (ii) patterning the second metal layer.
Claim 7
Dependent Claim
60 words
A method according to claim 5, wherein at the sub-step (ii) of the step (a) said first metal layer is patterned so as to form at least one supporting metal line together with said first interconnecting lines, said supporting metal line being formed in the spacing between two of said first interconnecting lines to prevent sagging of said insulator film.
Claim 8
Dependent Claim
19 words
A method according to claim 1, wherein said film is bonded to said interconnecting lines by said pressure bonding.
Claim 9
Dependent Claim
18 words
A method according to claim 1, wherein said film is bonded to said interconnecting lines by said adhesive.
Claim 10
Dependent Claim
14 words
A method according to claim 8, wherein said adhesive is cured by heat treatment.
Claim 11
Dependent Claim
21 words
A method according to claim 1, wherein said film is bonded to said interconnecting lines by a heat treatment under pressure.
Claim 12
Dependent Claim
18 words
A method according to claim 1, wherein said insulator is an epoxy resin containing particles of glass fiber.
Claim 13
Dependent Claim
15 words
A method according to claim 1, wherein said insulating material is a silicon nitride film.
Claim 14
Independent Claim
96 words
A method of producing a multilevel interconnection structure useful in semiconductor integrated circuits, comprising: (a) laying a plurality of first interconnecting lines of a metal on an insulating layer formed on a semiconductor substrate; (b) placing a separately prepared insulator film on said interconnecting lines; (c) bonding said insulator film to said interconnecting lines; (d) forming a contact hole through said insulator film in a region above one of said interconnecting lines and filling said contact hole with a metal; and (e) laying a plurality of second interconnecting lines of a metal on said insulator film.
Claim 15
Independent Claim
96 words
A method of producing a multilevel interconnection structure useful in semiconductor integrated circuits, comprising: (a) laying a plurality of first interconnecting lines of a metal on an insulating layer formed on a semiconductor substrate; (b) placing a separately prepared insulator film on said interconnecting lines; (c) bonding said insulator film to said interconnecting lines; (d) forming a contact hole through said insulator film in a region above one of said interconnecting lines and filling said contact hole with a metal; and (e) laying a plurality of second interconnecting lines of a metal on said insulator film.
Claim 16
Dependent Claim
14 words
A method according to claim 13, wherein said insulator film is a polyimide film.
Claim 17
Dependent Claim
14 words
A method according to claim 13, wherein said insulator film is a polytetrafluoroethylene film.
Claim 18
Dependent Claim
22 words
A method according to claim 13, wherein said insulator film is a film of an epoxy resin containing particles of glass fiber.
Claim 19
Dependent Claim
28 words
A method according to claim 13, wherein said insulator film is a film of an inorganic insulator selected from the group consisting of silicon oxide and silicon nitride.
Claim 20
Dependent Claim
21 words
A method according to claim 17, further comprising reducing the thickness of said insulator film bonded to said first interconnecting lines.
Claim 21
Dependent Claim
18 words
A method according to claim 13, wherein said film is bonded to said interconnecting lines by pressure bonding.
Claim 22
Dependent Claim
18 words
A method according to claim 13, wherein said film is bonded to said interconnecting lines with an adhesive.
Claim 23
Dependent Claim
23 words
A method according to claim 13, wherein said insulator film is bonded to said first interconnecting lines by a heat treatment under pressure.
Claim 24
Dependent Claim
62 words
A method according to claim 13, wherein the step (1) comprises the sub-steps of (i) forming a first metal layer on said insulating layer and (ii) patterning the first metal layer to form said first interconnecting lines and the step (d) comprises the sub-steps of (i) forming a second metal layer on said insulator film and (ii) patterning the second metal layer.
Claim 25
Dependent Claim
60 words
A method according to claim 13, wherein at the sub-step (ii) of the step (a) said first metal layer is patterned so as to form at least one supporting metal line together with said first interconnecting lines, said supporting metal line being formed in the spacing between two of said first interconnecting lines to prevent sagging of said insulator film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-18 | 2003-10-18 | 2004-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-18 | 2007-10-18 | 2008-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-18 | 2011-10-18 | 2012-04-18 | $7700.00 | Window Closed / Lapsed |