Abstract A half tone phase shift mask material, suitable for use at 193 nm is disclosed. It comprises a layer of nitrogen rich silicon nitride that was formed by subjecting a mixture of a nitrogen bearing gas, such as nitrogen and/or ammonia, with a silicon bearing gas, such as silane, to a plasma discharge. Provided the ratio of the nitrogen bearing to the silicon bearing gases is about 10 to 1, films having the required optical properties at 193 nm are formed. These properties are a reflectance that is less than 15% and a transmittance that is between 4 and 15%. Related optical properties, namely an extinction coefficient of about 0.4 and a refractive index of about 2.5, are also closely approached. Additionally, the films are stable under prolonged UV exposure and exhibit good etch behavior.
Inventors
👤 Chang-Ming Dai
👤 Lon A. Wang
👤 H.L. Chen
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-29 16:44
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
78 words
A process for the manufacture of a 193 nm half tone phase shift mask, comprising: admitting gaseous compounds of nitrogen and silicon into a reaction chamber at a pressure; initiating a plasma discharge within said gas thereby causing a layer of nitrogen rich silicon nitride to form, through plasma enhanced chemical vapor deposition, on a substrate; and when said layer has reached a thickness corresponding to a 180 degree phase shift for 193 nm radiation, terminating the process.
Claim 2
Dependent Claim
78 words
A process for the manufacture of a 193 nm half tone phase shift mask, comprising: admitting gaseous compounds of nitrogen and silicon into a reaction chamber at a pressure; initiating a plasma discharge within said gas thereby causing a layer of nitrogen rich silicon nitride to form, through plasma enhanced chemical vapor deposition, on a substrate; and when said layer has reached a thickness corresponding to a 180 degree phase shift for 193 nm radiation, terminating the process.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein the pressure is between about 10 -2 and 10 -1 torr.
Claim 4
Dependent Claim
20 words
The process of claim 1 wherein the plasma discharge is at a power level between about 90 and 100 watts.
Claim 5
Dependent Claim
18 words
The process of claim 1 wherein the substrate is at a temperature between about 250 and 300° C.
Claim 6
Dependent Claim
21 words
The process of claim 1 wherein the layer of silicon nitride has a reflectance less than about 15% at 193 nm.
Claim 7
Dependent Claim
27 words
The process of claim 1 wherein the layer of silicon nitride has a transmittance at 193 nm in the range of from about 4% to about 15%.
Claim 8
Dependent Claim
15 words
The process of claim 1 wherein said thickness is between about 1736 and 748 Angstroms.