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US6043526A
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Semiconductor memory cell using a ferroelectric thin film and a method for fabricating it
Assignee: Sony Semiconductor Solutions Corp
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Filing: 1997-12-22
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Granted: 2000-03-28
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Expires: 2017-12-22
Abstract
Abstract A capacitor structure of a semiconductor memory cell, comprises: a lower electrode formed on an insulation layer; a capacitor insulation film in form of a ferroelectric thin film formed on the lower electrode; and an upper electrode formed on the capacitor insulation layer, the lower electrode including a column-shaped projection made of a conductive material formed on the insulation layer, and a lower electrode layer covering the projection, and the ferroelectric thin film being formed on the lower electrode layer as originally stacked. A method for fabricating a capacitor structure of a semiconductor memory cell, comprises the steps of: forming a conductive material layer on an insulation layer, then patterning the conductive material layer to form a column-shaped projection of a conductive material on the insulation layer; stacking a lower electrode layer on the insulation layer including the surface of the column-shaped projection; stacking a ferroelectric thin film on the lower electrode layer as originally stacked; stacking an upper electrode layer on the ferroelectric thin film; and patterning the lower electrode layer, the ferroelectric thin film and the lower electrode layer to form a capacitor structure including a lower electrode, a capacitor insulation film in form of the ferroelectric thin film, and an upper electrode.
Inventors
- 👤 Akihiko Ochiai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:03
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/0335; H10B53/00; H10B53/30; H10D1/692; H10D1/696
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
73 words
A capacitor structure of a semiconductor memory cell, comprising: a lower electrode formed on an insulation layer, said lower electrode comprising a column-shaped projection made of a conductive material formed on said insulation layer, a lower electrode layer made of conductive material covering said column-shaped projection; a capacitor insulation film in the form of a ferroelectric thin film formed on said lower electrode; and an upper electrode formed on said capacitor insulation layer.
Claim 2
Dependent Claim
73 words
A capacitor structure of a semiconductor memory cell, comprising: a lower electrode formed on an insulation layer, said lower electrode comprising a column-shaped projection made of a conductive material formed on said insulation layer, a lower electrode layer made of conductive material covering said column-shaped projection; a capacitor insulation film in the form of a ferroelectric thin film formed on said lower electrode; and an upper electrode formed on said capacitor insulation layer.
Claim 3
Dependent Claim
38 words
The capacitor structure of a semiconductor memory cell according to claim 1 wherein said ferroelectric thin film is expressed by the general formula (Bi 2 O 2 ) 2+ (A m-1 B m O 3m+1 ) 2- .
Claim 4
Dependent Claim
45 words
The capacitor structure of a semiconductor memory cell according to claim 1 wherein said ferroelectric thin film is expressed by the general formula Bi X (Sr, Ca, Ba) Y (Ta z , Nb 1-z ) 2 O d , where 1.7≦X≦2.5, 0.6≦Y≦1.2, 0≦Z≦1.0 and 8.0≦d≦10.0.
Claim 5
Dependent Claim
38 words
The capacitor structure of a semiconductor memory cell according to claim 1 wherein said ferroelectric thin film is expressed by the general formula Bi X Sr Y Ta 2 O d , where 1.7≦X ≦2.5, 0.6≦≦Y≦1.2 and 8.0≦d≦10.0.
Claim 6
Dependent Claim
23 words
The capacitor structure of a semiconductor memory cell according to claim 1 wherein said ferroelectric thin film is made of a PZT compound.
Claim 7
Dependent Claim
41 words
The capacitor structure of a semiconductor memory cell according to claim 1 wherein said conductive material forming said projection is polycrystalline silicon doped with an impurity or tungsten, and said lower electrode layer is made of ruthenium oxide or iridium oxide.
Claim 8
Dependent Claim
84 words
A capacitor structure of a semiconductor memory cell, comprising: a lower electrode formed on an insulation layer, said lower electrode comprising a column-shaped projection made of a conductive material formed on said insulation layer, a barrier metal layer formed over said column-shaped projection, and a lower electrode layer made of conductive material covering said barrier metal layer; a capacitor insulation film in the form of a ferroelectric thin film formed on said lower electrode; and an upper electrode formed on said capacitor insulation layer.
Claim 9
Dependent Claim
84 words
A capacitor structure of a semiconductor memory cell, comprising: a lower electrode formed on an insulation layer, said lower electrode comprising a column-shaped projection made of a conductive material formed on said insulation layer, a barrier metal layer formed over said column-shaped projection, and a lower electrode layer made of conductive material covering said barrier metal layer; a capacitor insulation film in the form of a ferroelectric thin film formed on said lower electrode; and an upper electrode formed on said capacitor insulation layer.
Claim 10
Dependent Claim
41 words
The capacitor structure of a semiconductor memory cell according to claim 7, wherein said conductive material forming said projection is polycrystalline silicon doped with an impurity or tungsten, and said lower electrode layer is made of ruthenium oxide or iridium oxide.
Claim 11
Dependent Claim
38 words
The capacitor structure of a semiconductor memory cell according to claim 7, wherein said ferroelectric thin film is expressed by the general formula (Bi 2 O 2 ) 2+ (A m-1 B m O 3m+1 ) 2- .
Claim 12
Dependent Claim
45 words
The capacitor structure of a semiconductor memory cell according to claim 7, wherein said ferroelectric thin film is expressed by the general formula Bi X (Sr, Ca Ba) y (Ta Z , Nb 1-z ) 2 O d , where 1.7≦x≦2.5, 0.6≦Y≦1.2, 0≦Z≦1.0 and 8.0≦d≦10.0.
Claim 13
Dependent Claim
37 words
The capacitor structure of a semiconductor memory cell according to claim 7, wherein said ferroelectric thin film is expressed by the general formula Bi X Sr Y Ta Z O d , where 1.7≦X≦2.5, 0.6≦Y≦1.2 and 8.0≦d≦10.0.
Claim 14
Dependent Claim
23 words
The capacitor structure of a semiconductor memory cell according to claim 7 wherein said ferroelectric thin film is made of a PZT compound.
References Cited (Backward Citations)
US5499207A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-03-28 | 2003-09-27 | 2004-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-28 | 2007-09-27 | 2008-03-28 | $3760.00 | Window Closed / Lapsed |
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