US6043157A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having dual gate electrode material and process of fabrication thereof
Assignee: Lone Star Silicon Innovations LLC
•
Filing: 1997-12-18
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Granted: 2000-03-28
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Expires: 2017-12-18
Abstract
Abstract Generally, the present invention relates to a semiconductor device having a dual gate electrode material and a process of fabricating such a device. Consistent with one embodiment of the invention, a semiconductor device is formed by forming a first gate electrode over the substrate and forming a second gate electrode from a different material than the first gate electrode over the substrate. For example, the first gate electrode may be formed from polysilicon and a second gate electrode may be formed from a metal such as aluminum, titanium, cobalt, or copper. In accordance with one particular embodiment of the invention, the first and second gate electrodes are formed by forming a first layer of gate electrode material over the substrate, removing portions of the first gate electrode material to form the first gate electrode and a dummy gate electrode, forming a film over the substrate and between the first gate electrode and the dummy gate electrode, selectively removing the dummy gate electrode to form an opening while leaving the first gate electrode and the film substantially intact, and forming a second gate electrode in the opening.
Inventors
- 👤 Mark I Gardner
- 👤 Mark C. Gilmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:08
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0135; H10D84/014; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
45 words
A process of forming a semiconductor device, comprising: forming a first gate electrode and a second gate electrode over a substrate; selectively removing the second gate electrode; and re-forming the second gate electrode from a different material than the first gate electrode over the substrate.
Claim 2
Dependent Claim
45 words
A process of forming a semiconductor device, comprising: forming a first gate electrode and a second gate electrode over a substrate; selectively removing the second gate electrode; and re-forming the second gate electrode from a different material than the first gate electrode over the substrate.
Claim 3
Dependent Claim
19 words
The process of claim 1, further including forming source/drain regions adjacent each of the first and second gate electrodes.
Claim 4
Dependent Claim
25 words
The process of claim 1, wherein the first gate electrode is formed from polysilicon and the re-formed second gate electrode is formed from a metal.
Claim 5
Dependent Claim
28 words
The process of claim 1, wherein re-forming the second gate electrode from a different material than the first gate electrode includes re-forming the second gate electrode from copper.
Claim 6
Dependent Claim
23 words
The process of claim 1, wherein the re-forming the second gate electrode includes re-forming the second gate electrode after formation of source/drain regions.
Claim 7
Dependent Claim
81 words
A process of forming a semiconductor device, comprising: forming a first layer of gate electrode material over the substrate; removing portions of the first gate electrode material to form a first gate electrode and a dummy gate electrode; forming a film between the first gate electrode and the dummy gate electrode; selectively removing the dummy gate electrode to form an opening while leaving the first gate electrode and the film substantially intact; and forming a second gate electrode in the opening.
Claim 8
Dependent Claim
81 words
A process of forming a semiconductor device, comprising: forming a first layer of gate electrode material over the substrate; removing portions of the first gate electrode material to form a first gate electrode and a dummy gate electrode; forming a film between the first gate electrode and the dummy gate electrode; selectively removing the dummy gate electrode to form an opening while leaving the first gate electrode and the film substantially intact; and forming a second gate electrode in the opening.
Claim 9
Dependent Claim
37 words
The process of claim 6, wherein selectively removing the dummy gate electrode includes: forming a mask over the substrate to cover the first gate electrode and expose the dummy gate electrode; and etching the dummy gate electrode.
Claim 10
Dependent Claim
21 words
The process of claim 6, further including forming a gate insulating layer before forming the first layer of gate electrode material.
Claim 11
Dependent Claim
23 words
The process of claim 8, further including using the gate insulating layer to insulate the first and second gate electrodes from the substrate.
Claim 12
Dependent Claim
28 words
The process of claim 8, further including removing a portion of the gate insulating layer in the opening and forming a second gate insulating layer in the opening.
Claim 13
Dependent Claim
38 words
The process of claim 10, further including using the first gate insulating layer to insulate the first gate electrode from the substrate and using the second gate insulating layer to insulate the second gate electrode from the substrate.
Claim 14
Dependent Claim
94 words
A process of fabricating a semiconductor device, comprising: forming a gate insulating layer over a substrate; forming a polysilicon layer over the gate insulating layer; removing portions of the polysilicon layer to form a polysilicon gate electrode and a dummy gate electrode over the substrate; implanting dopants into the substrate to form source/drain regions adjacent the polysilicon and dummy gate electrodes; forming a film between the gate electrodes; selectively removing the dummy gate electrode to form an opening while leaving the polysilicon gate electrode intact; and forming a metal gate electrode in the opening.
Claim 15
Dependent Claim
94 words
A process of fabricating a semiconductor device, comprising: forming a gate insulating layer over a substrate; forming a polysilicon layer over the gate insulating layer; removing portions of the polysilicon layer to form a polysilicon gate electrode and a dummy gate electrode over the substrate; implanting dopants into the substrate to form source/drain regions adjacent the polysilicon and dummy gate electrodes; forming a film between the gate electrodes; selectively removing the dummy gate electrode to form an opening while leaving the polysilicon gate electrode intact; and forming a metal gate electrode in the opening.
Claim 16
Dependent Claim
21 words
The process of claim 12, wherein implanting the dopants includes forming spacers on sidewalls of the polysilicon and dummy gate electrodes.
Claim 17
Dependent Claim
18 words
The process of claim 13, wherein the opening is formed between spacers associated with the dummy gate electrode.
Claim 18
Dependent Claim
26 words
The process of claim 12, further including using the gate insulating layer to insulate the metal gate electrode and the polysilicon gate electrode from the substrate.
Claim 19
Dependent Claim
28 words
The process of claim 12, further including removing a portion of the gate insulating layer in the opening and forming a second gate insulating layer in the opening.
Claim 20
Dependent Claim
38 words
The process of claim 16, further including using the first gate insulating layer to insulate the polysilicon gate electrode from the substrate and using the second gate insulating layer to insulate the metal gate electrode from the substrate.
Claim 21
Dependent Claim
18 words
The process of claim 17, wherein the second gate insulating material is formed from a high permittivity material.
Claim 22
Dependent Claim
64 words
A semiconductor device, comprising: a substrate; a first gate electrode disposed over the substrate; and a second gate electrode disposed over the substrate, wherein the first and second gate electrodes are formed from a different material, and wherein the second gate electrode is formed by first forming a dummy gate electrode, selectively removing the dummy gate electrode, and then forming the second gate electrode.
Claim 23
Dependent Claim
64 words
A semiconductor device, comprising: a substrate; a first gate electrode disposed over the substrate; and a second gate electrode disposed over the substrate, wherein the first and second gate electrodes are formed from a different material, and wherein the second gate electrode is formed by first forming a dummy gate electrode, selectively removing the dummy gate electrode, and then forming the second gate electrode.
Claim 24
Dependent Claim
23 words
The device of claim 19, wherein the fist gate electrode is formed from polysilicon and the second gate electrode is formed from metal.
Claim 25
Dependent Claim
52 words
The device of claim 19, further including a first gate insulating layer between the first gate electrode and the substrate and a second gate insulating layer between the second gate electrode and the substrate, wherein the first gate insulating layer and second gate insulating layer are formed from a different dielectric material.
Claim 26
Dependent Claim
25 words
The device of claim 21, where the first gate insulating layer is an oxide and the second gate insulating layer is a high permittivity dielectric.
References Cited (Backward Citations)
US5872059A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-28 | 2003-09-27 | 2004-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-28 | 2007-09-27 | 2008-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-28 | 2011-09-27 | 2012-03-28 | $7700.00 | Window Closed / Lapsed |