Semiconductor device capable of selecting operation mode based on clock frequency

Claim 2

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit so as to generate a mode signal representing a discreet value indicative of a corresponding one of a plurality of frequency ranges of the first clock such that the mode signal exhibits hysteresis characteristics at a time of transition between the frequency ranges; and an internal circuit which switches an operation mode thereof according to the mode signal.

Claim 3

The semiconductor device as claimed in claim 1, wherein said clock-generation circuit comprises a phase-locked-loop circuit.

Claim 4

The semiconductor device as claimed in claim 2, wherein said phase-locked-loop circuit comprises a voltage-controlled oscillator receiving a voltage signal as an input, and said at least one internal signal includes said voltage signal.

Claim 5

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit so as to generate a mode signal representing a discreet value indicative of a corresponding one of a plurality of frequency ranges of the first clock such that the mode signal exhibits hysteresis characteristics at a time of transition between the frequency ranges; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said clock-generation circuit comprises a delay-locked-loop circuit.

Claim 6

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit so as to generate a mode signal representing a discreet value indicative of a corresponding one of a plurality of frequency ranges of the first clock such that the mode signal exhibits hysteresis characteristics at a time of transition between the frequency ranges; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said clock-generation circuit comprises a delay-locked-loop circuit.

Claim 7

The semiconductor device as claimed in claim 4, wherein said delay-locked-loop circuit comprises a series of delay elements for delaying said first clock by a predetermined delay amount, and said at least one internal signal includes at least one control signal used for controlling said series of delay elements to determine said predetermined delay amount.

Claim 8

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit so as to generate a mode signal representing a discreet value indicative of a corresponding one of a plurality of frequency ranges of the first clock such that the mode signal exhibits hysteresis characteristics at a time of transition between the frequency ranges; and an internal circuit which switches an operation mode thereof according to said mode signal, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an input buffer for receiving input signals, and said input buffer is driven by a first current amount in said first operation mode and by a second current amount in said second operation mode, said second current amount being larger than said first current amount.

Claim 9

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit so as to generate a mode signal representing a discreet value indicative of a corresponding one of a plurality of frequency ranges of the first clock such that the mode signal exhibits hysteresis characteristics at a time of transition between the frequency ranges; and an internal circuit which switches an operation mode thereof according to said mode signal, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an input buffer for receiving input signals, and said input buffer is driven by a first current amount in said first operation mode and by a second current amount in said second operation mode, said second current amount being larger than said first current amount.

Claim 10

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an input buffer for receiving input signals, and said input buffer includes: a latch-type first buffer operating in said first operation mode; and a differential-amplifier-type buffer operating in said second operation mode.

Claim 11

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an input buffer for receiving input signals, and said input buffer includes: a latch-type first buffer operating in said first operation mode; and a differential-amplifier-type buffer operating in said second operation mode.

Claim 12

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit so as to generate a mode signal representing a discreet value indicative of a corresponding one of a plurality of frequency ranges of the first clock such that the mode signal exhibits hysteresis characteristics at a time of transition between the frequency ranges; and an internal circuit which switches an operation mode thereof according to said mode signal, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an output buffer for outputting an output signal, and said output buffer drives said output signal with a first power in said first operation mode and with a second power in said second operation mode, said second power being greater than said first power.

Claim 13

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit so as to generate a mode signal representing a discreet value indicative of a corresponding one of a plurality of frequency ranges of the first clock such that the mode signal exhibits hysteresis characteristics at a time of transition between the frequency ranges; and an internal circuit which switches an operation mode thereof according to said mode signal, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an output buffer for outputting an output signal, and said output buffer drives said output signal with a first power in said first operation mode and with a second power in said second operation mode, said second power being greater than said first power.

Claim 14

The semiconductor device as claimed in claim 8, wherein said output buffer includes output transistors for outputting said output signal, said output transistors having wider gate widths in said second operation mode than in said first operation mode.

Claim 15

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an internal-voltage-generation circuit for generating an internal voltage used in said semiconductor device, said internal-voltage-generation circuit generating a first internal voltage in said first operation mode and generating a second internal voltage higher than said first internal voltage in said second operation mode.

Claim 16

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises an internal-voltage-generation circuit for generating an internal voltage used in said semiconductor device, said internal-voltage-generation circuit generating a first internal voltage in said first operation mode and generating a second internal voltage higher than said first internal voltage in said second operation mode.

Claim 17

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises: a memory-cell array for storing data; a data bus for transferring the data read from said memory-cell array; and an amplifier for amplifying a signal representing the data on said data bus, said amplifier consuming less power in said first operation mode than in said second operation mode.

Claim 18

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in a first operation mode at a frequency lower than a predetermined frequency and operating in a second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said internal circuit comprises: a memory-cell array for storing data; a data bus for transferring the data read from said memory-cell array; and an amplifier for amplifying a signal representing the data on said data bus, said amplifier consuming less power in said first operation mode than in said second operation mode.

Claim 19

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit, wherein said check circuit comprises: a latch circuit for holding data which indicates one of a first operation mode and a second operation mode; and a control circuit for setting first data to said latch circuit when said frequency of said first clock is higher than a first frequency, setting second data to said latch circuit when said frequency of said first clock is lower than a second frequency, and keeping said data of said latch circuit when said frequency of said first clock is between said first frequency and said second frequency; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in said first operation mode at a frequency lower than a predetermined frequency and operating in said second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said check circuit ascertains that an operation mode is switched from said first operation mode to said second operation mode when said frequency of said first clock increases and becomes higher than said first frequency, and ascertains that an operation mode is switched from said second operation mode to said first operation mode when said frequency of said first clock decreases and becomes lower than said second frequency, said first frequency being higher than said second frequency.

Claim 20

A semiconductor device which operates in synchronism with a first clock externally provided thereto, said semiconductor device comprising: a clock-generation circuit generating a second clock which maintains a predetermined phase relation with said first clock; a check circuit for checking a frequency of said first clock based on at least one internal signal generated by said clock-generation circuit, wherein said check circuit comprises: a latch circuit for holding data which indicates one of a first operation mode and a second operation mode; and a control circuit for setting first data to said latch circuit when said frequency of said first clock is higher than a first frequency, setting second data to said latch circuit when said frequency of said first clock is lower than a second frequency, and keeping said data of said latch circuit when said frequency of said first clock is between said first frequency and said second frequency; and an internal circuit which switches an operation mode thereof according to results of said checking, wherein said internal circuit is capable of operating in said first operation mode at a frequency lower than a predetermined frequency and operating in said second operation mode at a frequency higher than said predetermined frequency, said internal circuit consuming less power in said first operation mode than in said second operation mode, wherein said check circuit ascertains that an operation mode is switched from said first operation mode to said second operation mode when said frequency of said first clock increases and becomes higher than said first frequency, and ascertains that an operation mode is switched from said second operation mode to said first operation mode when said frequency of said first clock decreases and becomes lower than said second frequency, said first frequency being higher than said second frequency.

Claim 21

The semiconductor device as claimed in claim 12, further comprising an output node for outputting said results of said checking from said semiconductor device.