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US6033974A
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US
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Method for controlled cleaving process
Assignee: Silicon Genesis Corp
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Filing: 1999-08-10
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Granted: 2000-03-07
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Expires: 2019-08-10
Abstract
Abstract A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Inventors
- 👤 Francois J. Henley
- 👤 Nathan W. Cheung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:18
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; B; B81; B81C; B81C1/00; B81C1/00349; B81C1/0038; H10P30/208; H10P30/225; H10P54/00; H10P54/50; H10P54/52; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; B81C2201/00; B81C2201/01; B81C2201/0174; B81C2201/0191; B81C2201/0192
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
112 words
A process for forming a film of material from substrates, said process comprising: forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth, the stressed region comprising a deposited layer and an implanted region; and providing energy using a static pressure to a selected region of said substrate to initiate a controlled cleaving action at a cleaving plane within the deposited layer in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Claim 2
Dependent Claim
112 words
A process for forming a film of material from substrates, said process comprising: forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth, the stressed region comprising a deposited layer and an implanted region; and providing energy using a static pressure to a selected region of said substrate to initiate a controlled cleaving action at a cleaving plane within the deposited layer in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said deposited layer comprises silicon germanium.
Claim 4
Dependent Claim
13 words
The process of claim 1 wherein the deposited layer comprises an epitaxial layer.
Claim 5
Dependent Claim
22 words
The process of claim 1 wherein said stressed region is derived from layer formed by physical vapor deposition or chemical vapor deposition.
Claim 6
Dependent Claim
27 words
The process of claim 1 wherein said providing energy sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 7
Dependent Claim
35 words
The process of claim 1 wherein said providing energy increases a controlled stress in said material and sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 8
Dependent Claim
32 words
The process of claim 1 further comprising providing additional energy to said substrate to sustain said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 9
Dependent Claim
40 words
The process of claim 1 further comprising providing additional energy to said substrate to increases a controlled stress in said material and sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.
Claim 10
Dependent Claim
15 words
The process of claim 1 wherein said substrate is a silicon or epitaxial silicon wafer.
Claim 11
Dependent Claim
13 words
The process of claim 1 wherein the implanted region comprises hydrogen bearing particles.
Claim 12
Dependent Claim
21 words
The process of claim 1 wherein said propagating cleave front is selected from a single cleave front or multiple cleave fronts.
Claim 13
Dependent Claim
21 words
The process of claim 1 wherein said stressed layer is provided by a presence of deuterium particles at said selected depth.
Claim 14
Dependent Claim
36 words
The process of claim 1 wherein said substrate is made of a material selected from the group consisting of silicon, diamond, quartz, glass, sapphire, silicon carbide, dielectric, group III/V material, plastic, ceramic material, and multi-layered substrate.
Claim 15
Dependent Claim
10 words
The process of claim 1 wherein said surface is planar.
Claim 16
Dependent Claim
10 words
The process of claim 1 wherein said surface is curved.
Claim 17
Dependent Claim
27 words
The process of claim 1 wherein said substrate is a silicon substrate comprising an overlying layer of dielectric material, said selected depth being underneath said dielectric material.
Claim 18
Dependent Claim
19 words
The process of claim 1 wherein said fluid is selected from a static source or a fluid jet source.
Claim 19
Dependent Claim
20 words
The process of claim 1 wherein said fluid is directed to said selected depth to initiate said controlled cleaving action.
Claim 20
Dependent Claim
14 words
The process of claim 1 wherein said fluid is derived from a compressed gas.
Claim 21
Dependent Claim
120 words
A process for forming substrates, said process comprising: forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth, said stressed region comprising at least a deposited layer and an implanted region; bonding said surface of the substrate to a handle substrate; and providing energy using a static fluid source to a selected region of said substrate to initiate a controlled cleaving action at a cleaving plane at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Claim 22
Dependent Claim
120 words
A process for forming substrates, said process comprising: forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth, said stressed region comprising at least a deposited layer and an implanted region; bonding said surface of the substrate to a handle substrate; and providing energy using a static fluid source to a selected region of said substrate to initiate a controlled cleaving action at a cleaving plane at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
References Cited (Backward Citations)
US5374564A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-07 | 2003-09-06 | 2004-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-07 | 2007-09-06 | 2008-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-07 | 2011-09-06 | 2012-03-07 | $7700.00 | Window Closed / Lapsed |