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US6033952A
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Method of manufacturing a semiconductor device
Assignee: Renesas Electronics Corp
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Filing: 1999-05-10
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Granted: 2000-03-07
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Expires: 2019-05-10
Abstract
Abstract A semiconductor device manufacturing method which involves a fewer number of manufacturing processes and which eliminates the use of expensive high precision stepper and half-tone mask, or the like, by employing a simplified process flow, in which method an identical mask is reused to ensure registration margin without involving a high-resolution process. A contact hole requires solely a minimum diameter of 0.30 μm or thereabouts, thereby resulting in and added margin for the minimum diameter and eliminating a process for reducing a hole diameter. Even if the hole diameter has a deviation of about 0.05 μm, contact can be established with a silicon substrate, thereby eliminating a necessity for an expensive, high precision stepper which has been required for ensuring a registration margin. A damaged layer, which would otherwise cause an increase in the resistance of the storage node direct contact, is eliminated simultaneously with etching of a thick polysilicon film, thus eliminating a chemical dry etching (CDE) process which has conventionally been used for removing a damaged layer.
Inventors
- 👤 Shunji Yasumura
- 👤 Shinya Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:19
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
278 words
A method of manufacturing a semiconductor device comprising the steps of: forming on a silicon substrate a plurality of transfer gates, each of which has a frame; forming an oxide film for use as an interlayer dielectric film so as to extend over the plurality of transfer gates and holes formed between the plurality of transfer gates; a first etch pattern forming on the oxide film an etch pattern which can establish contact with the silicon substrate so as to extend across the frames, through a storage node mask and by use of a positive photoresist; a first dry-etching the oxide film along the etch pattern by setting an etch time to a time required for etching away the oxide film deposited at the bottom of the hole; forming a thick polysilicon film on the oxide film; a second etch pattern forming the etch pattern on the thick polysilicon film, through the previously-used storage node mask once again and by use of a positive photoresist; a second dry-etching in a collective manner the thick polysilicon film and a damaged layer that is formed on the silicon substrate as a result of the first dry etch step, by setting an etch time to a time required for etching away the thick polysilicon film and the damaged layer; a third etch pattern forming an etch pattern on the thick polysilicon film, through the storage node mask and by use of a negative photoresist; and a third dry etch forming a storage node by dry-etching the thick polysilicon film along the etch pattern that is formed as a result of the third etch pattern forming step, by means of anisotropic etching.
Claim 2
Independent Claim
278 words
A method of manufacturing a semiconductor device comprising the steps of: forming on a silicon substrate a plurality of transfer gates, each of which has a frame; forming an oxide film for use as an interlayer dielectric film so as to extend over the plurality of transfer gates and holes formed between the plurality of transfer gates; a first etch pattern forming on the oxide film an etch pattern which can establish contact with the silicon substrate so as to extend across the frames, through a storage node mask and by use of a positive photoresist; a first dry-etching the oxide film along the etch pattern by setting an etch time to a time required for etching away the oxide film deposited at the bottom of the hole; forming a thick polysilicon film on the oxide film; a second etch pattern forming the etch pattern on the thick polysilicon film, through the previously-used storage node mask once again and by use of a positive photoresist; a second dry-etching in a collective manner the thick polysilicon film and a damaged layer that is formed on the silicon substrate as a result of the first dry etch step, by setting an etch time to a time required for etching away the thick polysilicon film and the damaged layer; a third etch pattern forming an etch pattern on the thick polysilicon film, through the storage node mask and by use of a negative photoresist; and a third dry etch forming a storage node by dry-etching the thick polysilicon film along the etch pattern that is formed as a result of the third etch pattern forming step, by means of anisotropic etching.
Claim 3
Dependent Claim
98 words
The semiconductor device manufacturing method according to claim 1, wherein said step of second dry-etching is followed by a step of roughening the surface of the thick polysilicon film; said step of third etch pattern forming involves formation of an etch pattern on the thus-roughened thick polysilicon film, through the storage node mask and by use of a negative photoresist; and said step of third dry etch forming involves formation of a storage node by dry-etching the thus-roughened thick polysilicon film along an etch pattern formed in the third etch pattern forming step, by means of anisotropic etching.
Claim 4
Dependent Claim
21 words
The semiconductor device manufacturing method according to claim 1, wherein the storage node is a thickness of 50 to 300 nm.
Claim 5
Independent Claim
347 words
A method of forming a semiconductor device comprising the steps of: forming on a silicon substrate a plurality of transfer gates, each of which has a frame; forming an oxide film for use as an interlayer dielectric film so as to extend over the plurality of transfer gates and holes formed between the plurality of transfer gates; a first etch pattern forming on the oxide film an etch pattern which can establish contact with the silicon substrate so as to extend across the frames, through a storage node mask and by use of a positive photoresist; a first dry-etching the oxide film along the etch pattern by setting an etch time to a time required for etching away the oxide film deposited at the bottom of the hole; a damaged layer removing a damaged layer formed on the silicon substrate as a result of the first dry etching step, by means of dry chemical etching; forming a thick polysilicon film on the oxide film; a second etch pattern forming on the thick polysilicon film, through the previously-used storage node mask and by use of a positive photoresist; forming a frame along the surface of the positive photoresist formed during the second etch pattern forming step; a second dry-etching in a collective manner the thick polysilicon film and a damaged layer that is formed on the silicon substrate as a result of the first dry etch step, by setting an etch time to a time required for etching away the thick polysilicon film such that a portion of the thick polysilicon film is left at the bottom of the hole; a third etch pattern forming an etch pattern on the thick polysilicon film, through the storage node mask and by use of a negative photoresist; forming a frame along the surface of the negative photoresist formed during the third etch pattern forming step; and a third dry etch forming a storage node by dry-etching the thick polysilicon film along the etch pattern, in which a frame is formed during the frame forming step, by means of anisotropic etching.
Claim 6
Independent Claim
347 words
A method of forming a semiconductor device comprising the steps of: forming on a silicon substrate a plurality of transfer gates, each of which has a frame; forming an oxide film for use as an interlayer dielectric film so as to extend over the plurality of transfer gates and holes formed between the plurality of transfer gates; a first etch pattern forming on the oxide film an etch pattern which can establish contact with the silicon substrate so as to extend across the frames, through a storage node mask and by use of a positive photoresist; a first dry-etching the oxide film along the etch pattern by setting an etch time to a time required for etching away the oxide film deposited at the bottom of the hole; a damaged layer removing a damaged layer formed on the silicon substrate as a result of the first dry etching step, by means of dry chemical etching; forming a thick polysilicon film on the oxide film; a second etch pattern forming on the thick polysilicon film, through the previously-used storage node mask and by use of a positive photoresist; forming a frame along the surface of the positive photoresist formed during the second etch pattern forming step; a second dry-etching in a collective manner the thick polysilicon film and a damaged layer that is formed on the silicon substrate as a result of the first dry etch step, by setting an etch time to a time required for etching away the thick polysilicon film such that a portion of the thick polysilicon film is left at the bottom of the hole; a third etch pattern forming an etch pattern on the thick polysilicon film, through the storage node mask and by use of a negative photoresist; forming a frame along the surface of the negative photoresist formed during the third etch pattern forming step; and a third dry etch forming a storage node by dry-etching the thick polysilicon film along the etch pattern, in which a frame is formed during the frame forming step, by means of anisotropic etching.
Claim 7
Dependent Claim
102 words
The semiconductor device manufacturing method according to claim 4, wherein said step of second dry etching is followed by a step of roughening the surface of the thick polysilicon film; said step of third etch pattern forming involves formation of an etch pattern on the thus-roughened thick polysilicon film, through the storage node mask and by use of a negative photoresist; and said step of third dry etch forming involves formation of a storage node by dry-etching the thus-roughened thick polysilicon film along an etch pattern, in which a frame is formed during the frame forming step, by means of anisotropic etching.
Claim 8
Dependent Claim
22 words
The semiconductor device manufacturing method according to claim 5, wherein the etch stopper film is a thickness of 30 to 150 nm.
Claim 9
Dependent Claim
21 words
The semiconductor device manufacturing method according to claim 4, wherein the photoresist frame is a thickness of 250 to 1500 angstroms.
Claim 10
Dependent Claim
21 words
The semiconductor device manufacturing method according to claim 4, wherein the storage node is a thickness of 50 to 300 nm.
Claim 11
Independent Claim
276 words
A method of forming a semiconductor device comprising the steps of: forming on a silicon substrate a plurality of transfer gates, each of which has a frame; forming an oxide film for use as an interlayer dielectric film so as to extend over the plurality of transfer gates; forming a non-doped polysilicon film on the oxide film; a first etch pattern forming on the oxide film an etch pattern which can establish contact with the silicon substrate so as to extend across the frames, through a storage node mask and by use of a positive photoresist; forming a frame along the surface of the positive photoresist formed in the first etch pattern forming step; a first dry-etching the non-doped polysilicon film along the etch pattern, in which a frame is formed, by setting an etch time to a time required for etching away the non-doped polysilicon film such that a portion of the non-doped polysilicon film is left at the bottom of each of the holes formed among the plurality of transfer gates; forming a thin polysilicon film on the non-doped polysilicon film, the oxide film, and the non-doped polysilicon film remaining at the bottom of the hole; a second etch pattern forming the etch pattern on the thin polysilicon film, through the storage node mask and by use of a negative photoresist; forming a frame along the surface of the negative photoresist formed during the second etch pattern forming step; and a second dry etch forming a storage node by dry-etching the thin polysilicon film along the etch pattern, in which a frame is formed during the frame forming step, by means of anisotropic etching.
Claim 12
Independent Claim
276 words
A method of forming a semiconductor device comprising the steps of: forming on a silicon substrate a plurality of transfer gates, each of which has a frame; forming an oxide film for use as an interlayer dielectric film so as to extend over the plurality of transfer gates; forming a non-doped polysilicon film on the oxide film; a first etch pattern forming on the oxide film an etch pattern which can establish contact with the silicon substrate so as to extend across the frames, through a storage node mask and by use of a positive photoresist; forming a frame along the surface of the positive photoresist formed in the first etch pattern forming step; a first dry-etching the non-doped polysilicon film along the etch pattern, in which a frame is formed, by setting an etch time to a time required for etching away the non-doped polysilicon film such that a portion of the non-doped polysilicon film is left at the bottom of each of the holes formed among the plurality of transfer gates; forming a thin polysilicon film on the non-doped polysilicon film, the oxide film, and the non-doped polysilicon film remaining at the bottom of the hole; a second etch pattern forming the etch pattern on the thin polysilicon film, through the storage node mask and by use of a negative photoresist; forming a frame along the surface of the negative photoresist formed during the second etch pattern forming step; and a second dry etch forming a storage node by dry-etching the thin polysilicon film along the etch pattern, in which a frame is formed during the frame forming step, by means of anisotropic etching.
Claim 13
Dependent Claim
101 words
The semiconductor device manufacturing method according to claim 9, wherein said step of first dry etching is followed by a step of roughening the surface of the thin polysilicon film; said step of second etch pattern forming involves formation of an etch pattern on the thus-roughened thin polysilicon film, through the storage node mask and by use of a negative photoresist; and said step of second dry etch involves formation of a storage node by dry-etching the thus-roughened thin polysilicon film along an etch pattern, in which a frame is formed during the frame forming step, by means of anisotropic etching.
Claim 14
Dependent Claim
22 words
The semiconductor device manufacturing method according to claim 10, wherein the etch stopper film is a thickness of 30 to 150 nm.
Claim 15
Dependent Claim
21 words
The semiconductor device manufacturing method according to claim 9, wherein the photoresist frame is a thickness of 250 to 1500 angstroms.
Claim 16
Dependent Claim
21 words
The semiconductor device manufacturing method according to claim 9, wherein the storage node is a thickness of 50 to 300 nm.
References Cited (Backward Citations)
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