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US6033814A
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Method for multiple process parameter matching
Assignee: Micron Technology Inc
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Filing: 1998-02-26
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Granted: 2000-03-07
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Expires: 2018-02-26
Abstract
Abstract A computer-implemented method for matching parameters of outputs generated by a first and second process. The first process generates a first output having a characteristic measurable by a first parameter, and the second process generates a second output having the characteristic measurable by a second parameter. A computer having a processing unit and memory is provided. The computer generates a first model of the first parameter for the first process and a second model of the second parameter for the second process. The computer generates a first simulated output of the first process using the first model. A correction, which is a function of the second model and which compensates for the effect of the second process on the second parameter, is applied to the first simulated output to obtain a corrected output. The second process is applied to the corrected output to generate with the computer thereby a third output matching the first parameter of the first output.
Inventors
- 👤 James Burdorf
- 👤 Christophe Pierrat
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:49
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70491; G03F7/705; G03F7/70425; G03F7/70433; G03F7/70441; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
169 words
A method for matching parameters of generated outputs of a first photolithographic process and a second photolithographic process, comprising the steps of: providing a first photolithographic process; generating a first output from the first photolithographic process having a characteristic measurable by a first parameter; providing a second photolithographic process; generating a second output from the second photolithographic process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first photolithographic process; generating a second model of the second parameter for the second photolithographic process; generating a first simulated output of the first photolithographic process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second photolithographic process on the second parameter; and applying the second photolithographic process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 2
Independent Claim
169 words
A method for matching parameters of generated outputs of a first photolithographic process and a second photolithographic process, comprising the steps of: providing a first photolithographic process; generating a first output from the first photolithographic process having a characteristic measurable by a first parameter; providing a second photolithographic process; generating a second output from the second photolithographic process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first photolithographic process; generating a second model of the second parameter for the second photolithographic process; generating a first simulated output of the first photolithographic process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second photolithographic process on the second parameter; and applying the second photolithographic process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 3
Dependent Claim
29 words
The method according to claim 1, wherein the step of providing a first photolithographic process and the step of providing a second photolithographic process is applied to a mask.
Claim 4
Dependent Claim
40 words
The method according to claim 1, wherein the step of generating a first output further comprises the step of generating a first output from the first photolithographic process having a characteristic measurable by a critical dimension of a wafer image.
Claim 5
Dependent Claim
41 words
The method according to claim 1, wherein the step of generating a second output further comprises the step of generating a second output from the second photolithographic process having a characteristic measurable by a depth of focus of a wafer image.
Claim 6
Dependent Claim
22 words
The method according to claim 1, further comprising the step of generating from the corrected output a second simulated output for verification.
Claim 7
Dependent Claim
24 words
The method according to claim 1, wherein the step of generating the first simulated output further comprises the step of generating a three-dimensional image.
Claim 8
Dependent Claim
27 words
The method according to claim 2, wherein the step of generating from the corrected output a second simulated output further comprises the step of generating three-dimensional image.
Claim 9
Dependent Claim
23 words
The method according to claim 1, wherein the step of applying a correction further comprises the step of applying an optical proximity correction.
Claim 10
Dependent Claim
23 words
The method according to claim 1, wherein the step of applying a correction further comprises the step of applying a topography effect correction.
Claim 11
Dependent Claim
27 words
The method according to claim 1, wherein the step of generating a first simulated output further comprises generating a first simulated output for a specific contour level.
Claim 12
Dependent Claim
24 words
The method according to claim 1, wherein the step of generating a first model further includes the step of generating a first empirical model.
Claim 13
Dependent Claim
24 words
The method according to claim 1, wherein the step of generating a second model further includes the step of generating a second empirical model.
Claim 14
Dependent Claim
21 words
The method according to claim 1, wherein the step generating a first output includes the step of generating a wafer image.
Claim 15
Independent Claim
180 words
A method for matching parameters of generated outputs of a first ion projection process and a second ion projection process, comprising the steps of: providing a first ion projection process; generating a first output from the first ion projection process having a characteristic measurable by a first parameter; providing a second ion projection process; generating a second output from the second ion projection process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first ion projection process; generating a second model of the second parameter for the second ion projection process; generating a first simulated output of the first ion projection process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second ion projection process on the second parameter; and applying the second ion projection process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 16
Independent Claim
180 words
A method for matching parameters of generated outputs of a first ion projection process and a second ion projection process, comprising the steps of: providing a first ion projection process; generating a first output from the first ion projection process having a characteristic measurable by a first parameter; providing a second ion projection process; generating a second output from the second ion projection process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first ion projection process; generating a second model of the second parameter for the second ion projection process; generating a first simulated output of the first ion projection process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second ion projection process on the second parameter; and applying the second ion projection process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 17
Independent Claim
180 words
A method for matching parameters of generated outputs of a first x-ray projection process and a second x-ray projection process, comprising the steps of: providing a first x-ray projection process; generating a first output from the first x-ray projection process having a characteristic measurable by a first parameter; providing a second x-ray projection process; generating a second output from the second x-ray projection process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first x-ray projection process; generating a second model of the second parameter for the second x-ray projection process; generating a first simulated output of the first x-ray projection process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second x-ray projection process on the second parameter; and applying the second x-ray projection process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 18
Independent Claim
180 words
A method for matching parameters of generated outputs of a first x-ray projection process and a second x-ray projection process, comprising the steps of: providing a first x-ray projection process; generating a first output from the first x-ray projection process having a characteristic measurable by a first parameter; providing a second x-ray projection process; generating a second output from the second x-ray projection process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first x-ray projection process; generating a second model of the second parameter for the second x-ray projection process; generating a first simulated output of the first x-ray projection process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second x-ray projection process on the second parameter; and applying the second x-ray projection process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 19
Independent Claim
180 words
A method for matching parameters of generated outputs of a first e-beam projection process and a second e-beam projection process, comprising the steps of: providing a first e-beam projection process; generating a first output from the first e-beam projection process having a characteristic measurable by a first parameter; providing a second e-beam projection process; generating a second output from the second e-beam projection process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first e-beam projection process; generating a second model of the second parameter for the second e-beam projection process; generating a first simulated output of the first e-beam projection process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second e-beam projection process on the second parameter; and applying the second e-beam projection process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 20
Independent Claim
180 words
A method for matching parameters of generated outputs of a first e-beam projection process and a second e-beam projection process, comprising the steps of: providing a first e-beam projection process; generating a first output from the first e-beam projection process having a characteristic measurable by a first parameter; providing a second e-beam projection process; generating a second output from the second e-beam projection process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first e-beam projection process; generating a second model of the second parameter for the second e-beam projection process; generating a first simulated output of the first e-beam projection process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a function of the second model and wherein the correction compensates for the effect of the second e-beam projection process on the second parameter; and applying the second e-beam projection process to the corrected output thereby generating a third output matching the first parameter of the first output.
Claim 21
Dependent Claim
161 words
A computer-implemented method for matching parameters of generated outputs of a first and second photolithographic process, comprising the steps of: providing a first photolithographic process; generating a wafer image from the first photolithographic process having a characteristic measurable by a first parameter; selecting a second photolithographic process; generating a wafer image from the second photolithographic process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first process; generating a second model of the second parameter for the second process; generating a first simulated output of the first process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a finction of the second model and wherein the correction compensates for the effect of the second process on the second parameter; and applying the second process to the corrected output thereby a third output matching the first parameter of the first output.
Claim 22
Dependent Claim
161 words
A computer-implemented method for matching parameters of generated outputs of a first and second photolithographic process, comprising the steps of: providing a first photolithographic process; generating a wafer image from the first photolithographic process having a characteristic measurable by a first parameter; selecting a second photolithographic process; generating a wafer image from the second photolithographic process having a characteristic measurable by a second parameter; generating a first model of the first parameter for the first process; generating a second model of the second parameter for the second process; generating a first simulated output of the first process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the correction is a finction of the second model and wherein the correction compensates for the effect of the second process on the second parameter; and applying the second process to the corrected output thereby a third output matching the first parameter of the first output.
Claim 23
Dependent Claim
22 words
The method according to claim 17, further comprising the step of generating from the corrected output a second simulated output for verification.
Claim 24
Dependent Claim
24 words
The method according to claim 17, wherein the step of generating the first simulated output further comprises the step of generating a three-dimensional image.
Claim 25
Dependent Claim
27 words
The method according to claim 18, wherein the step of generating from the corrected output a second simulated output further comprises the step of generating three-dimensional image.
Claim 26
Dependent Claim
23 words
The method according to claim 17, wherein the step of applying a correction further comprises the step of applying an optical proximity correction.
Claim 27
Dependent Claim
23 words
The method according to claim 17, wherein the step of applying a correction further comprises the step of applying a topography effect correction.
Claim 28
Dependent Claim
27 words
The method according to claim 17, wherein the step of generating a first simulated output firther comprises generating a first simulated output for a specific contour level.
Claim 29
Dependent Claim
24 words
The method according to claim 17, wherein the step of generating a first model further includes the step of generating a first empirical model.
Claim 30
Dependent Claim
24 words
The method according to claim 17, wherein the step of generating a second model further includes the step of generating a second empirical model.
Claim 31
Independent Claim
167 words
A method of changing a process among a plurality of processes applied to a mask for fabricating semiconductor devices, comprising the steps of: generating a first output from a first process having a characteristic measurable by a first parameter; generating a second output from a second process having a characteristic measurable by a second parameter; generating a first model of the first parameter; generating a second model of the second parameter; generating a first simulated output of the first process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the output is a function of the second model and wherein the correction compensates for the effect of the second process on the second parameter; and applying the second process to the corrected output thereby generating a third output, wherein the third output is reflective of a change in a process among the plurality of processes, and wherein a wafer image is unchanged with respect to a desired parameter.
Claim 32
Independent Claim
167 words
A method of changing a process among a plurality of processes applied to a mask for fabricating semiconductor devices, comprising the steps of: generating a first output from a first process having a characteristic measurable by a first parameter; generating a second output from a second process having a characteristic measurable by a second parameter; generating a first model of the first parameter; generating a second model of the second parameter; generating a first simulated output of the first process using the first model; applying a correction to the first simulated output to obtain a corrected output, wherein the output is a function of the second model and wherein the correction compensates for the effect of the second process on the second parameter; and applying the second process to the corrected output thereby generating a third output, wherein the third output is reflective of a change in a process among the plurality of processes, and wherein a wafer image is unchanged with respect to a desired parameter.
Claim 33
Dependent Claim
27 words
The method according to claim 26, wherein the step of providing a first process and the step of providing a second process is applied to a mask.
Claim 34
Dependent Claim
39 words
The method according to claim 26, wherein the step of generating a first output further comprises the step of generating a first output from a first process having a characteristic measurable by a critical dimension of the wafer image.
Claim 35
Dependent Claim
40 words
The method according to claim 26, wherein the step of generating a second output further comprises the step of generating a second output from a second process having a characteristic measurable by a depth of focus of the wafer image.
References Cited (Backward Citations)
US5783341A
Cited
US5879845A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-07 | 2003-09-06 | 2004-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-07 | 2007-09-06 | 2008-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-07 | 2011-09-06 | 2012-03-07 | $7700.00 | Window Closed / Lapsed |