US6033584A
Expired / Lapsed
US
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Process for reducing copper oxide during integrated circuit fabrication
Assignee: Advanced Micro Devices Inc
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Filing: 1997-12-22
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Granted: 2000-03-07
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Expires: 2017-12-22
Abstract
Abstract A method of integrated circuit fabrication creating copper interconnect structures wherein the formation of copper oxide is reduced or eliminated by etching away the copper oxide performing an H 2 plasma treatment in a plasma enhanced chemical vapor deposition chamber.
Inventors
- 👤 Minh Van Ngo
- 👤 Guarionex Morales
- 👤 Takeshi Nogami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:26
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/285; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
98 words
A method for reducing the amount of copper oxide formed over a surface of copper on a semiconductor wafer, the method comprising the steps of: placing the semiconductor wafer in a gap between a pair of electrodes arranged within a reaction chamber; establishing a flow of H 2 gas through said reaction chamber; adjusting the pressure within said reaction chamber to a pressure within the range of about 0.4 Torr to about 1.2 Torr; and applying RF power between the pair of electrodes for selectively etching said copper oxide from said surface of copper on said semiconductor wafer.
Claim 2
Independent Claim
98 words
A method for reducing the amount of copper oxide formed over a surface of copper on a semiconductor wafer, the method comprising the steps of: placing the semiconductor wafer in a gap between a pair of electrodes arranged within a reaction chamber; establishing a flow of H 2 gas through said reaction chamber; adjusting the pressure within said reaction chamber to a pressure within the range of about 0.4 Torr to about 1.2 Torr; and applying RF power between the pair of electrodes for selectively etching said copper oxide from said surface of copper on said semiconductor wafer.
Claim 3
Dependent Claim
31 words
The method according to claim 1 wherein the step of adjusting the pressure with said reaction chamber comprises increasing the pressure with the chamber to a pressure of about 0.8 Torr.
Claim 4
Independent Claim
37 words
The method according to clam 1 further comprising the step of adjusting the gap between the pair of electrodes to about 700 millimeters wherein said gap adjusting step precedes applying RF power between the pair or electrodes.
Claim 5
Independent Claim
37 words
The method according to clam 1 further comprising the step of adjusting the gap between the pair of electrodes to about 700 millimeters wherein said gap adjusting step precedes applying RF power between the pair or electrodes.
Claim 6
Dependent Claim
26 words
The method according to claim 1 wherein the flow of H 2 gas is established in the range of about 300 sccm to about 700 sccm.
Claim 7
Dependent Claim
19 words
The method according to claim 1 wherein the flow of H 2 gas is established at substantially 500 sccm.
Claim 8
Dependent Claim
33 words
The method according to claim 1 further comprising the step of establishing a flow of N 2 gas at the same time the step of establishing a flow of H 2 gas occurs.
Claim 9
Dependent Claim
37 words
The method according to claim 6 wherein the flow of N 2 gas established during said step of establishing a flow of N 2 gas is in the range of about 50 sccm to about 200 sccm.
Claim 10
Dependent Claim
29 words
The method according to claim 6 wherein the flow of N 2 gas established during said step of establishing a flow of N 2 gas is about 100 sccm.
Claim 11
Dependent Claim
37 words
The method according to claim 1 wherein the amount of RF power applied between the pair of electrodes during the step of applying RF power is in the range of about 150 watts to about 390 watts.
Claim 12
Dependent Claim
29 words
The method according to claim 1 wherein the amount of RF power applied between the pair of electrodes during the step of applying RF power is about 225 watts.
Claim 13
Dependent Claim
29 words
The method according to claim 1 wherein the step of applying RF power is carried out for a time period ranging from about 1 minute to about 5 minutes.
Claim 14
Dependent Claim
24 words
The method according to claim 1 wherein the step of applying RF power is carried out for a time period of about 2 minutes.
Claim 15
Dependent Claim
41 words
The method according to claim 1 further comprising the step of heating the semiconductor wafer prior to the step of establishing a flow of H 2 gas to a temperature within a range of about 290° C. to about 340° C.
Claim 16
Dependent Claim
34 words
The method according to claim 1 further comprising the step of heating the semiconductor wafer prior to the step of establishing a flow of H 2 gas to a temperature of about 315° C.
Claim 17
Dependent Claim
30 words
The method according to claim 1 further comprising the step of depositing a layer of tungsten nitride over the copper surface after etching the copper oxide from the copper surface.
Claim 18
Dependent Claim
29 words
The method according to claim 1 further comprising the step of depositing a layer of tantalum over the copper surface after etching the copper oxide from the copper surface.
Claim 19
Dependent Claim
54 words
The method according to claim 1 further comprising the steps of heating the semiconductor wafer prior to the step of establishing a flow of H 2 gas to a temperature of about 315° C. and after the step of applying RF power has been completed establish a flow of a low k dielectric material.
Claim 20
Dependent Claim
15 words
The method according to claim 17 wherein the low k dielectric material is benzocyclobutene (BCB).
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2003-03-07 | 2003-09-06 | 2004-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-07 | 2007-09-06 | 2008-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-07 | 2011-09-06 | 2012-03-07 | $7700.00 | Window Closed / Lapsed |