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US6028877A
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Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate
Assignee: Samsung Electronics Co Ltd
•
Filing: 1997-12-12
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Granted: 2000-02-22
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Expires: 2017-12-12
Abstract
Abstract In accordance with the first present invention, a cladding layer is provided between a gallium nitride based semiconductor active region and a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride. The cladding layer includes at least one Al x Ga 1-x N layer. An averaged value of the index "x" of aluminum of the above at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of the above at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as the cladding layer has an averaged refractive index which is lower than the refractive index of gallium nitride.
Inventors
- 👤 Akitaka Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:42
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/3211; H01S5/3213; H01S5/20; H01S5/2004; H01S5/305; H01S5/3072
Claims Analysis
Total Claims: 88
Claim 1
Independent Claim
123 words
A cladding layer provided between a gallium nitride based semiconductor active region and a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride, said cladding layer including at least one Al x Ga 1-x N layer, wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 2
Dependent Claim
123 words
A cladding layer provided between a gallium nitride based semiconductor active region and a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride, said cladding layer including at least one Al x Ga 1-x N layer, wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 3
Dependent Claim
54 words
The cladding layer structure as claimed in claim 1, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.05.
Claim 4
Dependent Claim
72 words
The cladding layer structure as claimed in claim 2, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.03 and a thickness of said single Al x Ga 1-x N layer is not less than 0.1 micrometer.
Claim 5
Dependent Claim
62 words
The cladding layer structure as claimed in claim 1, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is continuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 6
Dependent Claim
49 words
The cladding layer structure as claimed in claim 4, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 7
Dependent Claim
40 words
The cladding layer structure as claimed in claim 5, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is varied to proportionally decrease in a thickness direction from said substrate to said active region.
Claim 8
Dependent Claim
49 words
The cladding layer structure as claimed in claim 4, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is non-linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 9
Dependent Claim
62 words
The cladding layer structure as claimed in claim 1, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is discontinuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 10
Dependent Claim
62 words
The cladding layer structure as claimed in claim 8, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 11
Dependent Claim
54 words
The cladding layer structure as claimed in claim 9, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied to discontinuously increase in a thickness direction from said substrate to said active region.
Claim 12
Dependent Claim
79 words
The cladding layer structure as claimed in claim 1, wherein said cladding layer comprises laminations of a plurality of Al x Ga 1-x N layers, provided that an averaged value of said index "x" of aluminum of said plurality of Al x Ga 1-x N layers is in the range of not less than 0.01 to less than 0.05 and a total thickness of said plurality of Al x Ga 1-x N layers is not less than 0.7 micrometers.
Claim 13
Dependent Claim
27 words
The cladding layer structure as claimed in claim 11, wherein said plurality of Al x Ga 1-x N layers differ in said index "x" from each other.
Claim 14
Dependent Claim
48 words
The cladding layer structure as claimed in claim 11, wherein each of said plurality of Al x Ga 1-x N layers has a thickness less than 7 micrometers but a total thickness of said plurality of Al x Ga 1-x N layers is not less than 7 micrometers.
Claim 15
Dependent Claim
63 words
The cladding layer structure as claimed in claim 11, wherein adjacent two of said Al x Ga 1-x N layers are separated by an InGaN layer having a thickness of not larger than 300 nanometers so that an averaged value of said index "x" of aluminum of said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 16
Dependent Claim
68 words
The cladding layer structure as claimed in claim 1, wherein said cladding layer comprises laminations of alternating Al x Ga 1-x N layers and GaN layers so that a total thickness of said cladding layer is not less than 7 micrometers and said averaged value of said index "x" of aluminum in said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 17
Dependent Claim
16 words
The cladding layer structure as claimed in claim 1, wherein said substrate comprises a sapphire substrate.
Claim 18
Dependent Claim
16 words
The cladding layer structure as claimed in claim 1, wherein said substrate comprises a spinel substrate.
Claim 19
Dependent Claim
17 words
The cladding layer structure as claimed in claim 1, wherein said substrate comprises a gallium nitride substrate.
Claim 20
Dependent Claim
41 words
The cladding layer structure as claimed in claim 1, wherein said gallium nitride based semiconductor active region comprises an indium gallium nitride active layer and an indium gallium nitride optical guide layer in contact with said indium gallium nitride active layer.
Claim 21
Dependent Claim
38 words
The cladding layer structure as claimed in claim 1, wherein a gallium nitride layer is further disposed between said substrate and said cladding layer and a thickness of said gallium nitride layer is not larger than 1.0 micrometer.
Claim 22
Dependent Claim
20 words
The cladding layer structure as claimed in claim 1, wherein said cladding layer is in contact directly with an electrode.
Claim 23
Dependent Claim
142 words
A gallium nitride based semiconductor multi-layer structure in a semiconductor laser device, comprising: a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride, a gallium nitride based semiconductor active region; and a cladding layer provided between said substrate and said active region, said cladding layer including at least one Al x Ga 1-x N layer, wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 24
Dependent Claim
142 words
A gallium nitride based semiconductor multi-layer structure in a semiconductor laser device, comprising: a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride, a gallium nitride based semiconductor active region; and a cladding layer provided between said substrate and said active region, said cladding layer including at least one Al x Ga 1-x N layer, wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 25
Dependent Claim
57 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.05.
Claim 26
Dependent Claim
75 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 23, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.03 and a thickness of said single Al x Ga 1-x N layer is not less than 0.1 micrometer.
Claim 27
Dependent Claim
65 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is continuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 28
Dependent Claim
52 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 25, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 29
Dependent Claim
43 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 26, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is varied to proportionally decrease in a thickness direction from said substrate to said active region.
Claim 30
Dependent Claim
52 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 25, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is non-linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 31
Dependent Claim
65 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is discontinuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 32
Dependent Claim
65 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 29, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 33
Dependent Claim
57 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 30, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied to discontinuously increase in a thickness direction from said substrate to said active region.
Claim 34
Dependent Claim
82 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said cladding layer comprises laminations of a plurality of Al x Ga 1-x N layers, provided that an averaged value of said index "x" of aluminum of said plurality of Al x Ga 1-x N layers is in the range of not less than 0.01 to less than 0.05 and a total thickness of said plurality of Al x Ga 1-x N layers is not less than 0.7 micrometers.
Claim 35
Dependent Claim
30 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 32, wherein said plurality of Al x Ga 1-x N layers differ in said index "x" from each other.
Claim 36
Dependent Claim
51 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 32, wherein each of said plurality of Al x Ga 1-x N layers has a thickness less than 7 micrometers but a total thickness of said plurality of Al x Ga 1-x N layers is not less than 7 micrometers.
Claim 37
Dependent Claim
66 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 32, wherein adjacent two of said Al x Ga 1-x N layers are separated by an InGaN layer having a thickness of not larger than 300 nanometers so that an averaged value of said index "x" of aluminum of said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 38
Dependent Claim
67 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said cladding layer comprises laminations of alternating AlxGa1-xN layers and GaN layers so that a total thickness of said cladding layer is not less than 7 micrometers and said averaged value of said index "x" of aluminum in said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 39
Dependent Claim
19 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said substrate comprises a sapphire substrate.
Claim 40
Dependent Claim
19 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said substrate comprises a spinel substrate.
Claim 41
Dependent Claim
20 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said substrate comprises a gallium nitride substrate.
Claim 42
Dependent Claim
44 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said gallium nitride based semiconductor active region comprises an indium gallium nitride active layer and an indium gallium nitride optical guide layer in contact with said indium gallium nitride active layer.
Claim 43
Dependent Claim
41 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein a gallium nitride layer is further disposed between said substrate and said cladding layer and a thickness of said gallium nitride layer is not larger than 1.0 micrometer.
Claim 44
Dependent Claim
23 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 22, wherein said cladding layer is in contact directly with an electrode.
Claim 45
Dependent Claim
206 words
A gallium nitride based semiconductor laser device, comprising: a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride; a first contact layer being made of gallium nitride and said first contact layer being provided over said substrate; a first cladding layer provided over said first contact layer, and said cladding layer including at least one Al x Ga 1-x N layer; a gallium nitride based semiconductor active region provided over said cladding layer; a second cladding layer provided over said gallium nitride based semiconductor active region; a second contact layer provided over said second cladding layer; a first electrode provided in contact with said first contact layer; and a second electrode provided in contact with said second contact layer; wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 46
Dependent Claim
206 words
A gallium nitride based semiconductor laser device, comprising: a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride; a first contact layer being made of gallium nitride and said first contact layer being provided over said substrate; a first cladding layer provided over said first contact layer, and said cladding layer including at least one Al x Ga 1-x N layer; a gallium nitride based semiconductor active region provided over said cladding layer; a second cladding layer provided over said gallium nitride based semiconductor active region; a second contact layer provided over said second cladding layer; a first electrode provided in contact with said first contact layer; and a second electrode provided in contact with said second contact layer; wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 47
Dependent Claim
57 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.05.
Claim 48
Dependent Claim
75 words
The gallium nitride based semiconductor laser device as claimed in claim 44, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.03 and a thickness of said single Al x Ga 1-x N layer is not less than 0.1 micrometer.
Claim 49
Dependent Claim
65 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is continuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 50
Dependent Claim
52 words
The gallium nitride based semiconductor laser device as claimed in claim 46, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 51
Dependent Claim
43 words
The gallium nitride based semiconductor laser device as claimed in claim 47, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is varied to proportionally decrease in a thickness direction from said substrate to said active region.
Claim 52
Dependent Claim
52 words
The gallium nitride based semiconductor laser device as claimed in claim 46, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is non-linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 53
Dependent Claim
65 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is discontinuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 54
Dependent Claim
67 words
The gallium nitride based semiconductor laser device as claimed in claim 50, wherein said cladding layer comprise s a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less th an 0.05.
Claim 55
Dependent Claim
57 words
The gallium nitride based semiconductor laser device as claimed in claim 51, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied to discontinuously increase in a thickness direction from said substrate to said active region.
Claim 56
Dependent Claim
82 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said cladding layer comprises laminations of a plurality of Al x Ga 1-x N layers, provided that an averaged value of said index "x" of aluminum of said plurality of Al x Ga 1-x N layers is in the range of not less than 0.01 to less than 0.05 and a total thickness of said plurality of Al x Ga 1-x N layers is not less than 0.7 micrometers.
Claim 57
Dependent Claim
30 words
The gallium nitride based semiconductor laser device as claimed in claim 53, wherein said plurality of Al x Ga 1-x N layers differ in said index "x" from each other.
Claim 58
Dependent Claim
51 words
The gallium nitride based semiconductor laser device as claimed in claim 53, wherein each of said plurality of Al x Ga 1-x N layers has a thickness less than 7 micrometers but a total thickness of said plurality of Al x Ga 1-x N layers is not less than 7 micrometers.
Claim 59
Dependent Claim
66 words
The gallium nitride based semiconductor laser device as claimed in claim 53, wherein adjacent two of said Al x Ga 1-x N layers are separated by an InGaN layer having a thickness of not larger than 300 nanometers so that an averaged value of said index "x" of aluminum of said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 60
Dependent Claim
71 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 43, wherein said cladding layer comprises laminations of alternating Al x Ga 1-x N layers and GaN layers so that a total thickness of sad cladding layer is not less than 7 micrometers and said averaged value of said index "x" of aluminum in said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 61
Dependent Claim
19 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said substrate comprises a sapphire substrate.
Claim 62
Dependent Claim
19 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said substrate comprises a spinel substrate.
Claim 63
Dependent Claim
20 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said substrate comprises a gallium nitride substrate.
Claim 64
Dependent Claim
44 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said gallium nitride based semiconductor active region comprises an indium gallium nitride active layer and an indium gallium nitride optical guide layer in contact with said indium gallium nitride active layer.
Claim 65
Dependent Claim
27 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein a buffer layer is further disposed between said substrate and said first cladding layer.
Claim 66
Dependent Claim
23 words
The gallium nitride based semiconductor laser device as claimed in claim 43, wherein said first contact layer has a thickness of 0.5 micrometers.
Claim 67
Dependent Claim
206 words
A gallium nitride based semiconductor laser device, comprising: a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride; a first contact layer being made of gallium nitride and said first contact layer being provided over said substrate; a first cladding layer provided over said first contact layer, and said cladding layer including at least one Al x Ga 1-x N layer; a gallium nitride based semiconductor active region provided over said cladding layer; a second cladding layer provided over said gallium nitride based semiconductor active region; a second contact layer provided over said second cladding layer; a first electrode provided in contact with said first cladding layer; and a second electrode provided in contact with said second contact layer; wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 68
Dependent Claim
206 words
A gallium nitride based semiconductor laser device, comprising: a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride; a first contact layer being made of gallium nitride and said first contact layer being provided over said substrate; a first cladding layer provided over said first contact layer, and said cladding layer including at least one Al x Ga 1-x N layer; a gallium nitride based semiconductor active region provided over said cladding layer; a second cladding layer provided over said gallium nitride based semiconductor active region; a second contact layer provided over said second cladding layer; a first electrode provided in contact with said first cladding layer; and a second electrode provided in contact with said second contact layer; wherein an averaged value of said index "x" of aluminum of said at least one Al x Ga 1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of said at least one Al x Ga 1-x N layer is not less than 0.7 micrometers as well as said cladding layer has an averaged refractive index which is lower than said refractive index of gallium nitride.
Claim 69
Dependent Claim
57 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.05.
Claim 70
Dependent Claim
75 words
The gallium nitride based semiconductor laser device as claimed in claim 65, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is constant at a value in the range of not less than 0.01 to less than 0.03 and a thickness of said single Al x Ga 1-x N layer is not less than 0.1 micrometer.
Claim 71
Dependent Claim
65 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is continuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 72
Dependent Claim
52 words
The gallium nitride based semiconductor laser device as claimed in claim 67, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 73
Dependent Claim
43 words
The gallium nitride based semiconductor laser device as claimed in claim 68, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is varied to proportionally decrease in a thickness direction from said substrate to said active region.
Claim 74
Dependent Claim
52 words
The gallium nitride based semiconductor laser device as claimed in claim 67, wherein said index "x" of aluminum of said single Al x Ga 1-x N layer is non-linearly varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 75
Dependent Claim
65 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is discontinuously varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 76
Dependent Claim
65 words
The gallium nitride based semiconductor laser device as claimed in claim 71, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied so that said averaged value of said index "x" is in the range of not less than 0.01 to less than 0.05.
Claim 77
Dependent Claim
57 words
The gallium nitride based semiconductor laser device as claimed in claim 72, wherein said cladding layer comprises a single Al x Ga 1-x N layer and said index "x" of aluminum of said single Al x Ga 1-x N layer is step-like varied to discontinuously increase in a thickness direction from said substrate to said active region.
Claim 78
Dependent Claim
82 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said cladding layer comprises laminations of a plurality of Al x Ga 1-x N layers, provided that an averaged value of said index "x" of aluminum of said plurality of Al x Ga 1-x N layers is in the range of not less than 0.01 to less than 0.05 and a total thickness of said plurality of Al x Ga 1-x N layers is not less than 0.7 micrometers.
Claim 79
Dependent Claim
30 words
The gallium nitride based semiconductor laser device as claimed in claim 74, wherein said plurality of Al x Ga 1-x N layers differ in said index "x" from each other.
Claim 80
Dependent Claim
51 words
The gallium nitride based semiconductor laser device as claimed in claim 74, wherein each of said plurality of Al x Ga 1-x N layers has a thickness less than 7 micrometers but a total thickness of said plurality of Al x Ga 1-x N layers is not less than 7 micrometers.
Claim 81
Dependent Claim
66 words
The gallium nitride based semiconductor laser device as claimed in claim 74, wherein adjacent two of said Al x Ga 1-x N layers are separated by an InGaN layer having a thickness of not larger than 300 nanometers so that an averaged value of said index "x" of aluminum of said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 82
Dependent Claim
71 words
The gallium nitride based semiconductor multi-layer structure as claimed in claim 74, wherein said cladding layer comprises laminations of alternating Al x Ga 1-x N layers and GaN layers so that a total thickness of said cladding layer is not less than 7 micrometers and said averaged value of said index "x" of aluminum in said cladding layer is in the range of not less than 0.01 to less than 0.05.
Claim 83
Dependent Claim
19 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said substrate comprises a sapphire substrate.
Claim 84
Dependent Claim
19 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said substrate comprises a spinel substrate.
Claim 85
Dependent Claim
20 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said substrate comprises a gallium nitride substrate.
Claim 86
Dependent Claim
44 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said gallium nitride based semiconductor active region comprises an indium gallium nitride active layer and an indium gallium nitride optical guide layer in contact with said indium gallium nitride active layer.
Claim 87
Dependent Claim
27 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein a buffer layer is further disposed between said substrate and said first contact layer.
Claim 88
Dependent Claim
23 words
The gallium nitride based semiconductor laser device as claimed in claim 64, wherein said first contact layer has a thickness of 0.5 micrometers.
References Cited (Backward Citations)
US5617438A
Cited
US5866440A
Cited
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| 7.5 Years (Year 8) | 2007-02-21 | 2007-08-23 | 2008-02-22 | $3760.00 | Window Closed / Lapsed |
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