Power inverter device

Claim 2

A power inverter device generating at least three different levels of voltages at an AC terminal thereof which comprises a plurality of semiconductor switching elements, diodes and capacitors coupled via a plurality plate shaped conductors, wherein said plurality of plate shaped conductors include a first plate shaped conductor to which is to be applied a highest DC voltage potential, a second plate shaped conductor to which is to be applied a lowest DC voltage potential, a third plate shaped conductor which is to be applied an intermediate DC voltage potential and a fourth plate shaped conductor at which the AC terminal is located, and said plurality of plate shaped conductors other than said third plate shaped conductor are arranged over a face of said third plate shaped conductor via an insulating material.

Claim 3

A neutral point clamped 3 level type power inverter device which comprises first through fourth semiconductor switching elements, a first plate shaped conductor which connects the first semiconductor switching element and the second semiconductor switching element in series, a second plate shaped conductor having an AC terminal which connects the second semiconductor switching element and the third semiconductor switching element in series, a third plate shaped conductor which connects the third semiconductor switching element and the fourth semiconductor switching element in series, a capacitor having an intermediate voltage point which is connected in parallel with the series connected first through fourth semiconductor switching elements via fourth and fifth plate shaped conductors, a first diode one terminal of which is connected to the intermediate voltage point of the capacitor via a sixth plate shaped conductor and the other terminal of which is connected to the first plate shaped conductor in a polarity of flowing a forward current from the intermediate voltage point of the capacitor to the first plate shaped conductor, and a second diode one terminal of which is connected to the sixth plate shaped conductor and the other terminal of which is connected to the third plate shaped conductor in a polarity of flowing a forward current from the third plate shaped conductor to the intermediate voltage point of the capacitor, in which the first through fifth plate shaped conductors are arranged over the sixth plate shaped conductor via an insulating material.

Claim 4

A neutral point clamped 3 level type power inverter device which comprises first through fourth semiconductor switching elements, a first plate shaped conductor which connects the first semiconductor switching element and the second semiconductor switching element in series, a second plate shaped conductor having an AC terminal which connects the second semiconductor switching element and the third semiconductor switching element in series, a third plate shaped conductor which connects the third semiconductor switching element and the fourth semiconductor switching element in series, a capacitor having an intermediate voltage point which is connected in parallel with the series connected first through fourth semiconductor switching elements via fourth and fifth plate shaped conductors, a first diode one terminal of which is connected to the intermediate voltage point of the capacitor via a sixth plate shaped conductor and the other terminal of which is connected to the first plate shaped conductor in a polarity of flowing a forward current from the intermediate voltage point of the capacitor to the first plate shaped conductor, and a second diode one terminal of which is connected to the sixth plate shaped conductor and the other terminal of which is connected to the third plate shaped conductor in a polarity of flowing a forward current from the third plate shaped conductor to the intermediate voltage point of the capacitor, in which the first through fifth plate shaped conductors are arranged over the sixth plate shaped conductor via an insulating material.

Claim 5

A power inverter device according to claim 2, wherein the first through fifth plate shaped conductors are arranged on a common plane.

Claim 6

A power inverter device according to claim 2, wherein the insulating material is an air layer.

Claim 7

A power inverter device according to claim 3, wherein the insulating material is an air layer.

Claim 8

A power inverter device according to claim 2, wherein one of the semiconductor switching elements at the most high voltage side and one of the semiconductor switching elements at the most low voltage side among the plurality of the semiconductor switching elements are arranged close to the capacitor.

Claim 9

A power inverter device according to claim 3, wherein one of the semiconductor switching elements at the most high voltage side and one of the semiconductor switching elements at the most low voltage side among the plurality of the semiconductor switching elements are arranged close to the capacitor.

Claim 10

A power inverter device according to claim 4, wherein one of the semiconductor switching elements at the most high voltage side and one of the semiconductor switching elements at the most low voltage side among the plurality of the semiconductor switching elements are arranged close to the capacitor.

Claim 11

A power inverter device according to claim 5, wherein one of the semiconductor switching elements at the most high voltage side and one of the semiconductor switching elements at the most low voltage side among the plurality of the semiconductor switching elements are arranged close to the capacitor.

Claim 12

A power inverter device according to claim 2, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 13

A power inverter device according to claim 3, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 14

A power inverter device according to claim 4, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 15

A power inverter device according to claim 5, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 16

A power inverter device according to claim 6, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 17

A power inverter device according to claim 7, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 18

A power inverter device according to claim 8, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 19

A power inverter device according to claim 9, wherein the first plate shaped conductor is provided with a connection point for the first diode between a connection point of the first semiconductor switching element and a connection point of the second semiconductor switching element.

Claim 20

A power inverter device according to claim 2, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 21

A power inverter device according to claim 3, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 22

A power inverter device according to claim 4, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 23

A power inverter device according to claim 5, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 24

A power inverter device according to claim 6, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 25

A power inverter device according to claim 7, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 26

A power inverter device according to claim 8, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 27

A power inverter device according to claim 9, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 28

A power inverter device according to claim 10, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 29

A power inverter device according to claim 11, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 30

A power inverter device according to claim 12, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 31

A power inverter device according to claim 13, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 32

A power inverter device according to claim 14, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 33

A power inverter device according to claim 15, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 34

A power inverter device according to claim 16, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.

Claim 35

A power inverter device according to claim 17, wherein the third plate shaped conductor is provided with a connection point for the second diode between a connection point of the third semiconductor switching element and a connection point of the fourth semiconductor switching element.