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JPH07131981A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor stack

Assignee: Toshiba Corp
•
Filing: 1993-11-05
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Granted: —
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Expires: 2013-11-05
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Abstract

Abstract Translated from Japanese (57)【要約】 【目的】 回路の配線リアクタンスをより小さくし、各 素子のスイッチング動作時のサージ電圧をさらに抑える ことが可能な半導体スタックを実現すること。 【構成】 正極側及び負極側の両端子を同一面上に導出 した少なくとも一組の正極側のスイッチング素子及び負 極側のスイッチング素子を有する半導体スタックにおい て、スイッチング素子の端子上に配置され、第1、第2 及び第3の導体と各隣接導体相互間を絶縁する絶縁物と を重ね合わせたものからなる一括積層導体を用いて各ス イッチング素子の接続を行う。 (57) [Abstract] [Purpose] To realize a semiconductor stack capable of further reducing the circuit wiring reactance and further suppressing the surge voltage during the switching operation of each element. A semiconductor stack having at least one set of a switching element on the positive side and a switching element on the negative side in which both the positive side terminal and the negative side terminal are led out on the same plane, and is arranged on the terminal of the switching element. , Second Further, the switching elements are connected by using a collective laminated conductor formed by stacking a third conductor and an insulator that insulates the adjacent conductors from each other.

Inventors

  • 👤 Toshiki Tatsuta
  • 👤 田 利 樹 龍

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 23:20
CPC Classifications
H; H02; H02M; H02M7/00; H02M7/003; H10; H10W; H10W90/00

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS62178538U Cited

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