Patent US6028006A successfully refreshed from Google Patents.
US6028006A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for maintaining the buffer capacity of siliceous chemical-mechanical silicon polishing slurries
Assignee: Texas Instruments Inc
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Filing: 1997-08-01
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Granted: 2000-02-22
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Expires: 2017-08-01
Abstract
Abstract A method for maintaining the buffer capacity of a polishing slurry during chemical-mechanical wafer polishing, the method comprising circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, monitoring the pH of the polishing slurry, combining an agent into the polishing slurry to adjust the pH of the polishing slurry and maintaining the pH of the polishing slurry within a predetermined range, thereby maintaining the buffer capacity of the polishing slurry.
Inventors
- 👤 Mohendra S. Bawa
- 👤 Vikki Sue Simpson
- 👤 Palmer A. Miller
- 👤 Franklin Louis Allen
- 👤 Gary Lee Etheridge
- 👤 Kenneth John L'Anglois
- 👤 Michael H. Grimes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:35
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/27; B24B37/30; B24B37/04; B24B37/042; B24B49/00; B24B57/00; B24B57/02
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
84 words
A method for maintaining the buffer capacity of a polishing slurry during chemical-mechanical wafer polishing, the method comprising: circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, the polishing slurry comprises particles of silica in water stabilized by sodium cations; monitoring the pH of the polishing slurry; combining an agent into the polishing slurry to adjust the pH of the polishing slurry; and maintaining the pH of the polishing slurry within a predetermined range thereby maintaining the buffer capacity of the polishing slurry.
Claim 2
Independent Claim
84 words
A method for maintaining the buffer capacity of a polishing slurry during chemical-mechanical wafer polishing, the method comprising: circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, the polishing slurry comprises particles of silica in water stabilized by sodium cations; monitoring the pH of the polishing slurry; combining an agent into the polishing slurry to adjust the pH of the polishing slurry; and maintaining the pH of the polishing slurry within a predetermined range thereby maintaining the buffer capacity of the polishing slurry.
Claim 3
Dependent Claim
34 words
The method as recited in claim 1 wherein the step of combining an agent into the polishing slurry to adjust the pH of the polishing slurry comprises combining an alkalis into the polishing slurry.
Claim 4
Dependent Claim
33 words
The method as recited in claim 1 wherein the step of combining an agent into the polishing slurry to adjust the pH of the polishing slurry comprises combining NaOH into the polishing slurry.
Claim 5
Dependent Claim
33 words
The method as recited in claim 1 wherein the step of combining an agent into the polishing slurry to adjust the pH of the polishing slurry comprises combining KOH into the polishing slurry.
Claim 6
Dependent Claim
35 words
The method as recited in claim 1 wherein the step of maintaining the pH of the polishing slurry within a predetermined range comprises maintaining the pH of the polishing slurry between about 9.7 and 11.7.
Claim 7
Dependent Claim
33 words
The method as recited in claim 1 wherein the step of maintaining the pH of the polishing slurry within a predetermined range comprises maintaining the pH of the polishing slurry at about 11.
Claim 8
Dependent Claim
21 words
The method as recited in claim 1 further comprising the step of dissolving SiO x , agglomerates in the polishing slurry.
Claim 9
Dependent Claim
22 words
The method as recited in claim 1 further comprising the step of minimizing precipitation of SiO x , in the polishing slurry.
Claim 10
Dependent Claim
21 words
The method as recited in claim 1 further comprising the step of eliminating precipitation of SiO x in the polishing slurry.
Claim 11
Independent Claim
85 words
A method for maintaining the buffer capacity in a polishing slurry during chemical-mechanical wafer polishing, the method comprising: circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, the polishing slurry comprises particles of silica in water stabilized by sodium cations; monitoring the pH of the polishing slurry; combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry; and maintaining the pH of the polishing slurry between about 9.7 and 11.7 thereby maintaining the buffer capacity of the polishing slurry.
Claim 12
Independent Claim
85 words
A method for maintaining the buffer capacity in a polishing slurry during chemical-mechanical wafer polishing, the method comprising: circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, the polishing slurry comprises particles of silica in water stabilized by sodium cations; monitoring the pH of the polishing slurry; combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry; and maintaining the pH of the polishing slurry between about 9.7 and 11.7 thereby maintaining the buffer capacity of the polishing slurry.
Claim 13
Dependent Claim
33 words
The method as recited in claim 10 wherein the step of combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry comprises combining NaOH into the polishing slurry.
Claim 14
Dependent Claim
33 words
The method as recited in claim 10 wherein the step of combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry comprises combining KOH into the polishing slurry.
Claim 15
Dependent Claim
20 words
The method as recited in claim 10 further comprising the step of dissolving SiO x agglomerates in the polishing slurry.
Claim 16
Dependent Claim
21 words
The method as recited in claim 10 further comprising the step of minimizing precipitation of SiO x in the polishing slurry.
Claim 17
Dependent Claim
21 words
The method as recited in claim 10 further comprising the step of eliminating precipitation of SiO x in the polishing slurry.
Claim 18
Independent Claim
102 words
A method for maintaining the buffer capacity in a polishing slurry during chemical-mechanical wafer polishing, the method comprising: circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, the polishing slurry comprises particles of silica in water stabilized by sodium cations; monitoring the pH of the polishing slurry; combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry; minimizing precipitation of SiO x in the polishing slurry; dissolving SiO x agglomerates in the polishing slurry; and maintaining the pH of the polishing slurry between about 9.7 and 11.7 thereby maintaining the buffer capacity of the polishing slurry.
Claim 19
Independent Claim
102 words
A method for maintaining the buffer capacity in a polishing slurry during chemical-mechanical wafer polishing, the method comprising: circulating the polishing slurry in a chemical-mechanical wafer polishing apparatus, the polishing slurry comprises particles of silica in water stabilized by sodium cations; monitoring the pH of the polishing slurry; combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry; minimizing precipitation of SiO x in the polishing slurry; dissolving SiO x agglomerates in the polishing slurry; and maintaining the pH of the polishing slurry between about 9.7 and 11.7 thereby maintaining the buffer capacity of the polishing slurry.
Claim 20
Dependent Claim
33 words
The method as recited in claim 16 wherein the step of combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry comprises combining NaOH into the polishing slurry.
Claim 21
Dependent Claim
33 words
The method as recited in claim 16 wherein the step of combining an alkalis into the polishing slurry to adjust the pH of the polishing slurry comprises combining KOH into the polishing slurry.
Claim 22
Dependent Claim
21 words
The method as recited in claim 16 further comprising the step of eliminating precipitation of SiO x in the polishing slurry.
References Cited (Backward Citations)
US5662769A
Cited
US5643406A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-21 | 2003-08-23 | 2004-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-21 | 2007-08-23 | 2008-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-21 | 2011-08-23 | 2012-02-22 | $7700.00 | Window Closed / Lapsed |