US6017680A
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Method for pattern formation and process for preparing semiconductor device
Assignee: Hitachi Ltd
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Filing: 1998-05-29
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Granted: 2000-01-25
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Expires: 2018-05-29
Abstract
Abstract A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a γ-hydroxy or δ-hydroxy carboxylic acid structure is partially or entirely converted to a γ-lactone or δ-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
Inventors
- 👤 Takashi Hattori
- 👤 Yuko Tsuchiya
- 👤 Hiroshi Shiraishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:30
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/023; G03F7/0233; G03F7/0236; G03F7/038; G03F7/0045; G03F7/26; G03F7/30; G03F7/32; G03F7/322; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
47 words
A method comprising the steps of: forming a coating including a photosensitive composition, the photosensitive composition containing a carboxylic acid structure; and irradiating the coating in a predetermined pattern to convert at least a portion of the carboxylic acid structure that is irradiated into a lactone structure.
Claim 2
Independent Claim
47 words
A method comprising the steps of: forming a coating including a photosensitive composition, the photosensitive composition containing a carboxylic acid structure; and irradiating the coating in a predetermined pattern to convert at least a portion of the carboxylic acid structure that is irradiated into a lactone structure.
Claim 3
Dependent Claim
14 words
The method according to claim 1, wherein the coating is formed on a substrate.
Claim 4
Dependent Claim
20 words
The method according to claim 1, wherein the step of irradiating the coating is performed by using an actinic radiation.
Claim 5
Dependent Claim
30 words
The method according to claim 1, wherein the step of irradiating the coating converts at least a portion of the carboxylic acid structure that is irradiated into a γ-lactone structure.
Claim 6
Dependent Claim
17 words
The method according to claim 4, wherein the carboxylic acid structure is a γ-hydroxy carboxylic acid structure.
Claim 7
Dependent Claim
30 words
The method according to claim 1, wherein the step of irradiating the coating converts at least a portion of the carboxylic acid structure that is irradiated into a δ-lactone structure.
Claim 8
Dependent Claim
17 words
The method according to claim 6, wherein the carboxylic acid structure is a δ-hydroxy carboxylic acid structure.
Claim 9
Dependent Claim
24 words
The method according to claim 1, wherein at least 50% of the carboxylic acid structure that is irradiated is converted into a lactone structure.
Claim 10
Dependent Claim
24 words
The method according to claim 1, wherein at least 70% of the carboxylic acid structure that is irradiated is converted into a lactone structure.
Claim 11
Dependent Claim
17 words
The method according to claim 1, wherein the carboxylic acid structure is a γ-hydroxy carboxylic acid structure.
Claim 12
Dependent Claim
17 words
The method according to claim 1, wherein the carboxylic acid structure is a δ-hydroxy carboxylic acid structure.
Claim 13
Dependent Claim
36 words
The method according to claim 1, wherein the carboxylic acid structure is represented by the following formula: ##STR33## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
Claim 14
Dependent Claim
36 words
The method according to claim 1, wherein the carboxylic acid structure is represented by the following formula: ##STR34## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
Claim 15
Dependent Claim
46 words
The method according to claim 1, wherein the carboxylic acid structure is represented by the following formula: ##STR35## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms and X represents either an acetal or a tetrahydropyranyl group.
Claim 16
Dependent Claim
46 words
The method according to claim 1, wherein the carboxylic acid structure is represented by the following formula: ##STR36## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms and X represents either an acetal or a tetrahydropyranyl group.
Claim 17
Dependent Claim
29 words
The method according to claim 1, wherein the photosensitive composition comprises a polymeric compound and the polymeric compound has the carboxylic acid structure represented by the following formula: ##STR37##
Claim 18
Dependent Claim
30 words
The method according to claim 16, wherein the polymeric compound comprises repeating units of an alicyclic structure having on its side chain the carboxylic acid structure represented by the formula.
Claim 19
Dependent Claim
28 words
The method according to claim 1, wherein the photosensitive composition comprises a polymeric compound and the polymeric compound has the carboxylic acid structure represented by the following formula:
Claim 20
Dependent Claim
30 words
The method according to claim 18, wherein the polymeric compound comprises repeating units of an alicyclic structure having on its side chain the carboxylic acid structure represented by the formula.
Claim 21
Dependent Claim
28 words
The method according to claim 1, wherein the photosensitive composition comprises a polymeric compound and the polymeric compound has the carboxylic acid structure represented by the following formula:
Claim 22
Dependent Claim
30 words
The method according to claim 20, wherein the polymeric compound comprises repeating units of an alicyclic structure having on its side chain the carboxylic acid structure represented by the formula.
Claim 23
Dependent Claim
28 words
The method according to claim 1, wherein the photosensitive composition comprises a polymeric compound and the polymeric compound has the carboxylic acid structure represented by the following formula:
Claim 24
Dependent Claim
30 words
The method according to claim 22, wherein the polymeric compound comprises repeating units of an alicyclic structure having on its side chain the carboxylic acid structure represented by the formula.
Claim 25
Independent Claim
78 words
A method of forming a semiconductor device comprising the steps of: forming a resist pattern on a semiconductor substrate; and etching the semiconductor substrate, wherein the step of forming a resist pattern further comprises the steps of: forming a coating including a photosensitive composition, the photosensitive composition containing a carboxylic acid structure; and irradiating the coating in a predetermined pattern to convert at least a portion of the carboxylic acid structure that is irradiated into a lactone structure.
Claim 26
Independent Claim
78 words
A method of forming a semiconductor device comprising the steps of: forming a resist pattern on a semiconductor substrate; and etching the semiconductor substrate, wherein the step of forming a resist pattern further comprises the steps of: forming a coating including a photosensitive composition, the photosensitive composition containing a carboxylic acid structure; and irradiating the coating in a predetermined pattern to convert at least a portion of the carboxylic acid structure that is irradiated into a lactone structure.
Claim 27
Dependent Claim
18 words
The method according to claim 24, wherein the resist pattern is formed such that no cross-linking reaction occurs.
Claim 28
Dependent Claim
36 words
The method according to claim 24, wherein the carboxylic acid structure is represented by the following formula: ##STR38## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
Claim 29
Dependent Claim
36 words
The method according to claim 24, wherein the carboxylic acid structure is represented by the following formula: ##STR39## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
Claim 30
Dependent Claim
46 words
The method according to claim 24, wherein the carboxylic acid structure is represented by the following formula: ##STR40## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms and X represents either an acetal or a tetrahydropyranyl group.
Claim 31
Dependent Claim
46 words
The method according to claim 24, wherein the carboxylic acid structure is represented by the following formula: ##STR41## where each R represents either a hydrogen atom or an alkyl group having 1 to 10 carbon atoms and X represents either an acetal or a tetrahydropyranyl group.
Claim 32
Independent Claim
80 words
A method of forming a semiconductor device comprising the steps of: forming a resist pattern on a semiconductor substrate; and implanting ions into the semiconductor substrate, wherein the step of forming a resist pattern further comprises the steps of: forming a coating including a photosensitive composition, the photosensitive composition containing a carboxylic acid structure; and irradiating the coating in a predetermined pattern to convert at least a portion of the carboxylic acid structure that is irradiated into a lactone structure.
Claim 33
Independent Claim
80 words
A method of forming a semiconductor device comprising the steps of: forming a resist pattern on a semiconductor substrate; and implanting ions into the semiconductor substrate, wherein the step of forming a resist pattern further comprises the steps of: forming a coating including a photosensitive composition, the photosensitive composition containing a carboxylic acid structure; and irradiating the coating in a predetermined pattern to convert at least a portion of the carboxylic acid structure that is irradiated into a lactone structure.
Claim 34
Dependent Claim
18 words
The method according to claim 30, wherein the resist pattern is formed such that no cross-linking reaction occurs.
References Cited (Backward Citations)
JPS62164045A
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US4942113A
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JPH04226461A
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JPH08259626A
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