Contrast enhanced photolithography

Claim 2

A process for producing a developed photoresist having improved resolution by photolithography which comprises the steps of: (a) forming a photoresist layer on a substrate, (b) forming a contrast enhancing layer (CEL) directly on the photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable, coloured compound in a solvent, followed by heating to form a dry, non-attack superficial layer of a CEL in direct contact with said photoresist, said coloured compound being present in a sufficient amount to render the superficial layer opaque, (c) exposing the photoresist through an imaging pattern and through the CEL using radiation which is effective to bleach said compound, and (d) simultaneously removing the CEL and developing the photoresist using a single developer in which both the CEL and the photoresist are soluble, said photobleachable, coloured compound being selected from a reversible photochromic compound having the general formula (1): ##STR11## wherein Y represents ##STR12## R' and R" being hydrogen or alkyl, X represents oxygen or ##STR13## in which A is hydrogen or an alkyl or aryl group, and R 1 , R 2 , R 3 and R 4 represent aryl, alkyl, aralkyl, hydrogen or heterocyclic groups.

Claim 3

A process for producing a developed photoresist having improved resolution by photolithography which comprises the steps of: (a) forming a positive photoresist layer on a substrate, (b) applying a contrast enhancing layer (CEL) directly on the photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent followed by drying to produce a superficial layer of a CEL in direct contact with said photoresist, said coloured compound being present in a sufficient amount to render the superficial layer opaque, (c) exposing the photoresist through an imaging pattern and through the CEL using radiation which is effective to bleach said compound and (d) simultaneously removing the CEL and developing the photoresist using an aqueous alkali developer, wherein the photobleachable compound is selected from compounds of the general formula (2): ##STR14## wherein X represents oxygen or ##STR15## in which A is hydrogen or an alkyl or aryl group, R represents an alkyl, aryl, aralkyl or heterocyclic group, A represents a furyl, thienyl, benzofuryl or benzothienyl group, and B represents an adamantylidene group or the grouping ##STR16## wherein R 6 and R 7 independently represent an alkyl, aryl, aralkyl or heterocyclic group or one of R 6 and R 7 represent hydrogen and the other represents an alkyl, aryl, aralkyl or heterocyclic group.

Claim 4

A process for producing a developed photoresist having improved resolution by photolithography which comprises the steps of: (a) forming a positive photoresist layer on a substrate, (b) applying a contrast enhancing layer (CEL) directly on the photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent followed by drying to produce a superficial layer of a CEL in direct contact with said photoresist, said coloured compound being present in a sufficient amount to render the superficial layer opaque, (c) exposing the photoresist through an imaging pattern and through the CEL using radiation which is effective to bleach said compound and (d) simultaneously removing the CEL and developing the photoresist using an aqueous alkali developer, wherein the photobleachable compound is selected from compounds of the general formula (2): ##STR14## wherein X represents oxygen or ##STR15## in which A is hydrogen or an alkyl or aryl group, R represents an alkyl, aryl, aralkyl or heterocyclic group, A represents a furyl, thienyl, benzofuryl or benzothienyl group, and B represents an adamantylidene group or the grouping ##STR16## wherein R 6 and R 7 independently represent an alkyl, aryl, aralkyl or heterocyclic group or one of R 6 and R 7 represent hydrogen and the other represents an alkyl, aryl, aralkyl or heterocyclic group.

Claim 5

A process for producing a developed photoresist having improved resolution by photolithography which comprises the steps of: (a) forming a photoresist layer on a substrate, (b) applying a contrast enhancing layer (CEL) directly on the photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent, followed by drying to produce a superficial layer of a CEL in direct contact with said photoresist, said coloured compound being present in a sufficient amount to render the superficial layer opaque, (c) exposing the photoresist through an imaging pattern and through the CEL using radiation which is effective to bleach said compound, and (d) simultaneously removing the CEL and developing the photoresist using an alkali developer, wherein the photobleachable compound is selected from a compound of the general formula (3): ##STR17## wherein X represents ##STR18## and R 1 , R 2 and R 4 independently represent a group selected from hydrogen, alkyl or aryl (including substituted aryl), with the proviso that one of R 1 and R 2 is always hydrogen, and R 3 is a 3-thienyl, 3-furyl, 3-benzothienyl or 3-benzofuryl group in which the 2-position is substituted with an alkyl, aralkyl or aryl group (including substituted aryl).

Claim 6

A process for producing a developed photoresist having improved resolution by photolithography which comprises the steps of: (a) forming a photoresist layer on a substrate, (b) applying a contrast enhancing layer (CEL) directly on the photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent, followed by drying to produce a superficial layer of a CEL in direct contact with said photoresist, said coloured compound being present in a sufficient amount to render the superficial layer opaque, (c) exposing the photoresist through an imaging pattern and through the CEL using radiation which is effective to bleach said compound, and (d) simultaneously removing the CEL and developing the photoresist using an alkali developer, wherein the photobleachable compound is selected from a compound of the general formula (3): ##STR17## wherein X represents ##STR18## and R 1 , R 2 and R 4 independently represent a group selected from hydrogen, alkyl or aryl (including substituted aryl), with the proviso that one of R 1 and R 2 is always hydrogen, and R 3 is a 3-thienyl, 3-furyl, 3-benzothienyl or 3-benzofuryl group in which the 2-position is substituted with an alkyl, aralkyl or aryl group (including substituted aryl).

Claim 7

A process according to claim 2 in which the substrate is a semi-conductor wafer.

Claim 8

A process according to claim 4 in which the photochromic compound in the CEL is converted to its coloured form by exposure to activating radiation prior to the imaging step.

Claim 9

A process according to claim 4 in which the photoresist is a positive photoresist comprising a novolac resin and a photosensitive cross-linking agent.

Claim 10

A process according to claim 3 in which the photoresist bearing the CEL layer is subjected to a baking step prior to exposing said photoresist in step (c) to convert the photochromic compound to its colored form.

Claim 11

A process according to claim 6 in which the CEL layer is formed by deposition from a solution of the photobleachable compound in a novolac resin composition.

Claim 12

In a process for producing a developed photoresist having improved resolution by photolithography wherein a photoresist layer is formed on a substrate, a contrast enhancing layer (CEL) is deposited directly on the photoresist layer and is rendered optically opaque by incorporation of a photobleachable, coloured compound and the photoresist is exposed through an imaging pattern and through the CEL using radiation which is effective to bleach said compound, the improvement consisting essentially of selecting as the photobleachable compound a reversible photochromic compound of the general formula (1): ##STR19## wherein Y represents ##STR20## R' and R" being hydrogen or alkyl; X represents oxygen or ##STR21## in which A is hydrogen or an alkyl or aryl group; R 1 , R 2 , R 3 and R 4 represent aryl, alkyl, aralkyl, hydrogen or heterocyclic groups; and developing the photoresist and removing the CEL simultaneously in a single step using a developer in which both the CEL and the unexposed parts of the photoresist are soluble.

Claim 13

In a process for producing a developed photoresist having improved resolution by photolithography wherein a photoresist layer is formed on a substrate, a contrast enhancing layer (CEL) is deposited directly on the photoresist layer and is rendered optically opaque by incorporation of a photobleachable, coloured compound and the photoresist is exposed through an imaging pattern and through the CEL using radiation which is effective to bleach said compound, the improvement consisting essentially of selecting as the photobleachable compound a reversible photochromic compound of the general formula (1): ##STR19## wherein Y represents ##STR20## R' and R" being hydrogen or alkyl; X represents oxygen or ##STR21## in which A is hydrogen or an alkyl or aryl group; R 1 , R 2 , R 3 and R 4 represent aryl, alkyl, aralkyl, hydrogen or heterocyclic groups; and developing the photoresist and removing the CEL simultaneously in a single step using a developer in which both the CEL and the unexposed parts of the photoresist are soluble.

Claim 14

A process according to claim 9 in which the developer is an aqueous alkali.

Claim 15

A process according to claim 10 in which the photoresist is a positive photoresist comprising a novolac resin and a photosensitive cross-linking agent.

Claim 16

A process for producing a developed photoresist having improved resolution by photolithography wherein: (a) a positive photoresist layer is formed on a substrate; (b) a contrast enhancing layer (CEL) is formed directly on a photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent followed by drying to produce a superficial layer of a CEL in direct contact with said photoresist; (c) the photoresist is exposed through an imaging pattern and through the CEL using radiation which is effective to bleach said compound, the improvement consisting essentially of selecting as the photobleachable compound, a reversible photochromic compound of the general formula (2) below: ##STR22## wherein X represents oxygen or ##STR23## in which A is hydrogen or an alkyl or aryl group; R represents an alkyl, aryl, aralkyl or heterocyclic group; A represents a furyl, thienyl, benzofuryl or benzothienyl group; B represents an adamantylidene group or the grouping: ##STR24## wherein R 6 and R 7 independently represents an alkyl, aryl, aralkyl or heterocyclic group or one of R 6 and R 7 represents hydrogen and the other represents an alkyl, aryl, aralkyl or heterocyclic group, and developing the photoresist and removing the CEL simultaneously in a single step using a developer in which both the CEL and the unexposed parts of the photoresist are soluble.

Claim 17

A process for producing a developed photoresist having improved resolution by photolithography wherein: (a) a positive photoresist layer is formed on a substrate; (b) a contrast enhancing layer (CEL) is formed directly on a photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent followed by drying to produce a superficial layer of a CEL in direct contact with said photoresist; (c) the photoresist is exposed through an imaging pattern and through the CEL using radiation which is effective to bleach said compound, the improvement consisting essentially of selecting as the photobleachable compound, a reversible photochromic compound of the general formula (2) below: ##STR22## wherein X represents oxygen or ##STR23## in which A is hydrogen or an alkyl or aryl group; R represents an alkyl, aryl, aralkyl or heterocyclic group; A represents a furyl, thienyl, benzofuryl or benzothienyl group; B represents an adamantylidene group or the grouping: ##STR24## wherein R 6 and R 7 independently represents an alkyl, aryl, aralkyl or heterocyclic group or one of R 6 and R 7 represents hydrogen and the other represents an alkyl, aryl, aralkyl or heterocyclic group, and developing the photoresist and removing the CEL simultaneously in a single step using a developer in which both the CEL and the unexposed parts of the photoresist are soluble.

Claim 18

A process for producing a developed photoresist having improved resolution by photolithography using a contrast enhancing layer (CEL), wherein the development of the photoresist and the removal of the CEL is carried out as a single step, said process consisting essentially of: (a) forming a photoresist layer on a substrate; (b) forming a contrast enhancing layer (CEL) directly on the photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent, followed by drying to produce a superficial layer of an opaque CEL in direct contact with said photoresist; (c) exposing the photoresist through an imaging pattern and through the CEL using radiation which is effective to bleach said compound and simultaneously removing the CEL; and (d) simultaneously developing the photoresist and removing the CEL using an alkali developer in a single step, wherein the photobleachable compound is selected from a compound of the general formula (3) below: ##STR25## wherein X represents ##STR26## R 1 , R 2 and R 4 independently represents a group selected from hydrogen, alkyl or aryl, including substituted aryl, with the proviso that one of R 1 and R 2 is always hydrogen, and R 3 is a 3-thienyl, 3-furyl, 3-benzothienyl or 3-benofuryl group in which the 2-position is substituted with an alkyl, aralkyl or aryl group, including substituted aryl.

Claim 19

A process for producing a developed photoresist having improved resolution by photolithography using a contrast enhancing layer (CEL), wherein the development of the photoresist and the removal of the CEL is carried out as a single step, said process consisting essentially of: (a) forming a photoresist layer on a substrate; (b) forming a contrast enhancing layer (CEL) directly on the photoresist layer by applying to said photoresist layer a solution or dispersion of a photobleachable compound in a solvent, followed by drying to produce a superficial layer of an opaque CEL in direct contact with said photoresist; (c) exposing the photoresist through an imaging pattern and through the CEL using radiation which is effective to bleach said compound and simultaneously removing the CEL; and (d) simultaneously developing the photoresist and removing the CEL using an alkali developer in a single step, wherein the photobleachable compound is selected from a compound of the general formula (3) below: ##STR25## wherein X represents ##STR26## R 1 , R 2 and R 4 independently represents a group selected from hydrogen, alkyl or aryl, including substituted aryl, with the proviso that one of R 1 and R 2 is always hydrogen, and R 3 is a 3-thienyl, 3-furyl, 3-benzothienyl or 3-benofuryl group in which the 2-position is substituted with an alkyl, aralkyl or aryl group, including substituted aryl.

Claim 20

A process according to claim 12 in which the substrate is a semi-conductor wafer.

Claim 21

A process according to claim 14 in which the photochromic compound in the CEL is converted to its coloured form by exposure to activating radiation prior to the imaging step.

Claim 22

A process according to claim 13 in which the photoresist is a positive photoresist comprising a novolac resin and a photosensitive cross-linking agent.

Claim 23

A process according to claim 13 in which the photoresist bearing the CEL layer is subjected to a baking step prior to exposing said photoresist in step (c) to convert the photochromic compound to its coloured form.

Claim 24

A process according to claim 16 in which the CEL layer is formed by deposition from a solution of the photobleachable compound in a novolac resin composition.