Apparatus for and method of conditioning chemical mechanical polishing pad during workpiece polishing cycle

Claim 3

A method in accordance with claim 1 wherein said stream of cryogenic particles comprises a two-phase stream of dry ice and air.

Claim 4

A method in accordance with claim 2 wherein said two-phase stream is supplied to the surface of said polishing pad at a temperature in the range of between about -150° F. and about -25° F. in an amount of between about 25 lbs. per hour and about 200 lbs/hr, said dry ice two-phase stream supplied at a pressure of between about 75 psi and about 200 psi at a volumetric flow of between about 100 cfm and about 300 cfm.

Claim 5

A method in accordance with claim 3 wherein said two-phase stream is supplied at a temperature of between about -125° F. and about -50° F., a pressure of between about 80 psi and about 150 psi, a mass flow rate of between about 35 lbs/hr and about 150 lbs/hr, a pressure of between about 80 psi and about 150 psi and a flow rate of between about 125 cfm and about 200 cfm.

Claim 6

A method in accordance with claim 4 wherein said two-phase stream is supplied at a temperature in the range of between about -100° F. and about -65° F., a mass flow rate of between about 50 lbs/hr and about 125 lbs/hr, a pressure of between about 85 psi and about 125 psi and a volumetric flow rate of between about 135 cfm and about 175 cfm.

Claim 7

A method in accordance with claim 5 wherein said two-phase stream is supplied at a temperature approximately -75° F., said mass flow rate is between about 75 lbs/hr and about 100 lbs/hr, a pressure of between about 90 psi and about 100 psi and a volumetric flow rate of approximately 150 cfm.

Claim 8

A method of polishing a workpiece comprising contacting a workpiece on a carrier with a polishing pad whereby said workpiece is polished and said polishing pad is conditioned in accordance with the method of claim 1.

Claim 9

A method in accordance with claim 7 wherein said step of conditioning said glazed polishing pad occurs sequentially after each step of polishing a workpiece.

Claim 10

A method in accordance with claim 8 wherein said workpiece is a semiconductor wafer.

Claim 13

An apparatus in accordance with claim 10 wherein said stream of cryogenic particles comprises a two-phase stream of dry ice and air.

Claim 14

An apparatus in accordance with claim 11 wherein said two phase stream is characterized by a temperature in the range of between about -150° F. and about -25° F.; a mass flow rate of between about 25 lbs/hr and about 200 lbs/hr; a pressure of between about 75 psi and about 200 psi; and a volumetric flow rate of between about 100 cfm and about 300 cfm.

Claim 15

An apparatus in accordance with claim 12 wherein said two-phase stream is characterized by a temperature in the range of between about -125° F. and -50° F.; a mass flow rate in the range of between about 35 lbs/hr and about 150 lbs/hr; a pressure in the range of between about 80 psi and about 150 psi; and a volumetric flow rate in the range of between about 125 cfm and about 200 cfm.

Claim 16

An apparatus in accordance with claim 13 wherein said two-phase stream is characterized by a temperature in the range of between about -100° F. and about -65° F.; a mass flow rate in the range of between about 50 lbs/hr and about 125 lbs/hr; a pressure in the range of between about 85 psi and about 125 psi; and a volumetric flow rate in the range of between about 135 cfm and about 175 cfm.

Claim 17

An apparatus in accordance with claim 14 wherein said two-phase stream is characterized by a temperature of approximately -75° F.; a volumetric flow rate in the range of between about 75 lbs/hr and about 100 lbs/hr; a pressure in the range of between about 90 psi and about 100 psi; and a volumetric flow rate of approximately 150 cfm.

Claim 18

An apparatus for polishing a workpiece comprising a carrier provided with means for holding a workpiece; a polishing assembly provided with a polishing pad which contacts the workpiece disposed in said carrier wherein said workpiece is polished and wherein said polishing pad is glazed; and means for conditioning said polishing pad in accordance with the apparatus of claim 10.

Claim 19

An apparatus in accordance with claim 16 wherein said workpiece is a semiconductor wafer.

Claim 20

An apparatus in accordance with claim 10 wherein said means for contacting said glazed polishing pad with a stream of cryogenic particles includes a cryogenic spraying gun provided with a spray nozzle in communication with a cryogenic fluid source.

Claim 21

An apparatus in accordance with claim 18 wherein said stream of cryogenic particles is provided by dry ice and wherein said cryogenic fluid source is liquid carbon dioxide.