Abstract The most distinctive feature of the present invention lies in that a warp and crystal defects can be prevented from occurring and a processing margin for forming an isolation groove can be improved in an intelligent power device including a power element section and an IC control section within one chip. A bonded wafer is obtained by bonding an active-layer substrate and a supporting substrate with an epitaxially grown silicon layer interposed therebetween so as to cover an oxide film selectively formed at the interface of the active-layer substrate. Isolation trenches are then formed in the bonded wafer to such a depth as to reach the oxide film from the element forming surface of the active-layer substrate. Thus, an IC controller is formed within a dielectric isolation region surrounded with the isolation trenches and the oxide film and accordingly the IC controller can effectively be isolated by a dielectric.
A method of manufacturing a semiconductor bonded substrate, comprising the steps of: selectively forming a dielectric layer on one major surface of an active-layer substrate; forming an epitaxial layer on the major surface of said active-layer substrate in thickness covering said dielectric layer; mirror-finishing a surface of said epitaxial layer; and bonding a mirror-finished supporting substrate to the mirror-finished surface of said epitaxial layer.
Claim 2
Independent Claim
64 words
A method of manufacturing a semiconductor bonded substrate, comprising the steps of: selectively forming a dielectric layer on one major surface of an active-layer substrate; forming an epitaxial layer on the major surface of said active-layer substrate in thickness covering said dielectric layer; mirror-finishing a surface of said epitaxial layer; and bonding a mirror-finished supporting substrate to the mirror-finished surface of said epitaxial layer.