US6008070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer level fabrication and assembly of chip scale packages
Assignee: Round Rock Research LLC
•
Filing: 1998-05-21
•
Granted: 1999-12-28
•
Expires: 2018-05-21
Abstract
Abstract A method for producing integrated circuit devices comprises the steps of forming and packaging such devices at the wafer scale, including forming a plurality of chip circuits with bond pads, adhesively fixing a plate of glass to the active surface of the wafer, slicing the wafer, applying a sealant layer to the backside of the wafer, forming contact holes through the upper glass plate, metallizing the glass plate and singulating the individual chips. Use of etchable glass for the package and palladium for metallization provides an advantageous construction method.
Inventors
- 👤 Warren M. Farnworth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:27
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/0198; H10W70/00; H10W70/01; H10W70/05; H10W70/08; H10W70/09; H10W70/099; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W74/00; H10W74/10; H10W74/111; H10W99/00; H10W72/013; H10W72/01331; H10W72/071; H10W72/073; H10W72/90; H10W72/941; H10W72/9413; H10W90/00; H10W90/701; H10W90/731; H10W90/734
Claims Analysis
Total Claims: 63
Claim 1
Independent Claim
219 words
A method of making semiconductor devices, said method comprising: providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having at least one circuit formed therein and at least one bond pad on a first side thereof, said at least one bond pad connected to said at least one circuit; adhesively fixing a first plate of glass to said first side of said wafer substrate, said first plate of glass having an exterior surface and a substantially parallel interior surface; reducing a thickness of said wafer substrate by removing a portion of the second side thereof; separating said semiconductor devices by removing substrate material in said street areas, said semiconductor devices remaining fixed to said first glass plate; applying a sealant material to said second side of said wafer substrate; forming an array of contact holes extending through said first glass plate to the at least one bond pad; metallizing said exterior surface of said first glass plate to form a pattern of conductive leads for connecting said at least one bond pad to said metallized exterior surface of said first glass plate; and singulating said semiconductor devices by separation thereof in said street areas.
Claim 2
Independent Claim
219 words
A method of making semiconductor devices, said method comprising: providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having at least one circuit formed therein and at least one bond pad on a first side thereof, said at least one bond pad connected to said at least one circuit; adhesively fixing a first plate of glass to said first side of said wafer substrate, said first plate of glass having an exterior surface and a substantially parallel interior surface; reducing a thickness of said wafer substrate by removing a portion of the second side thereof; separating said semiconductor devices by removing substrate material in said street areas, said semiconductor devices remaining fixed to said first glass plate; applying a sealant material to said second side of said wafer substrate; forming an array of contact holes extending through said first glass plate to the at least one bond pad; metallizing said exterior surface of said first glass plate to form a pattern of conductive leads for connecting said at least one bond pad to said metallized exterior surface of said first glass plate; and singulating said semiconductor devices by separation thereof in said street areas.
Claim 3
Dependent Claim
79 words
The method of claim 1, further comprising: applying a sealant material to said second side; forming an array of contact holes extending through said first glass plate to the array of said bond pads; metallizing said exterior surface of said first glass plate to form a pattern of conductive leads for connecting said bond pads to said metallization on the first surface of said first glass plate; and singulating said semiconductor devices by separation thereof in said street areas.
Claim 4
Dependent Claim
50 words
The method in accordance with claim 1, further comprising the step of flattening, planarizing and polishing the exterior surface of said first glass plate in correlation with the second side of said wafer substrate after fixing said first glass plate to said first side of said wafer substrate with adhesive.
Claim 5
Dependent Claim
15 words
The method in accordance with claim 1, wherein said first plate of glass is photo-etchable.
Claim 6
Dependent Claim
32 words
The method in accordance with claim 1, wherein said reducing step includes planarizing the second side of said wafer substrate to be parallel with the exterior surface of said first glass plate.
Claim 7
Dependent Claim
21 words
The method in accordance with claim 1, wherein the thickness of said wafer substrate is reduced by a chemical etching step.
Claim 8
Dependent Claim
21 words
The method in accordance with claim 1, wherein the thickness of said wafer substrate is reduced by a mechanical polishing step.
Claim 9
Dependent Claim
24 words
The method in accordance with claim 1, wherein the thickness of said water substrate is reduced by mechanical polishing with a chemical etchant/abrasive slurry.
Claim 10
Dependent Claim
25 words
The method in accordance with claim 1, wherein said step of separating said semiconductor devices comprises etching through the wafer substrate in the street areas.
Claim 11
Dependent Claim
18 words
The method in accordance with claim 1, wherein said step of separating said semiconductor devices comprises mechanical scribing.
Claim 12
Dependent Claim
42 words
The method in accordance with claim 1, wherein said step of applying said sealant material to said second side of said wafer substrate comprises attaching a second plate of glass to said second side of said wafer substrate with a sealant adhesive.
Claim 13
Dependent Claim
30 words
The method in accordance with claim 1, wherein the step of applying said sealant material to said second side of said wafer substrate comprises application of a polymeric sealant thereto.
Claim 14
Dependent Claim
37 words
The method in accordance with claim 1, wherein the step of forming said contact holes comprises forming substantially linear holes through said first glass plate in an array substantially identical to the at least one bond pad.
Claim 15
Dependent Claim
25 words
The method in accordance with claim 13, wherein said substantially linear holes are formed by one of a photo-etching process and a mechanical drilling process.
Claim 16
Dependent Claim
52 words
The method in accordance with claim 1, wherein said metallizing step comprises applying a metal to said exterior surface of said first glass plate including said contact holes, and etching to provide separate interconnects and leads passing through said contact holes to connect said interconnects with said at least one bond pad.
Claim 17
Dependent Claim
17 words
The method in accordance with claim 1, wherein said metallization is applied by chemical vapor deposition (CVD).
Claim 18
Dependent Claim
14 words
The method in accordance with claim 1, wherein said metallization is applied by sputtering.
Claim 19
Dependent Claim
23 words
The method in accordance with claim 1, wherein said metallizing step comprises application of one of tungsten, aluminum and copper, and alloys thereof.
Claim 20
Dependent Claim
21 words
The method in accordance with claim 1, wherein said metallizing step comprises application of one of palladium and an alloy thereof.
Claim 21
Dependent Claim
31 words
The method in accordance with claim 1, further comprising the step of applying an insulative sealant coating over said exterior surface of said first glass layer prior to the metallizing step.
Claim 22
Dependent Claim
15 words
The method in accordance with claim 20, wherein said insulative sealant coating comprises silicon nitride.
Claim 23
Independent Claim
155 words
A method of making semiconductor devices, said method comprising: providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having at least one circuit formed therein and at least one bond pad on a first side thereof, said at least one bond pad connected to said at least one circuit; adhesively fixing a first plate of glass to said first side of said wafer substrate, said first plate of glass having an exterior surface and a substantially parallel interior surface; reducing a thickness of said wafer substrate by removing a portion of the second side thereof; separating said semiconductor devices by removing substrate material in said street areas, said semiconductor devices remaining fixed to said first glass plate; and applying a sealant material to said second side of said wafer substrate.
Claim 24
Independent Claim
155 words
A method of making semiconductor devices, said method comprising: providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having at least one circuit formed therein and at least one bond pad on a first side thereof, said at least one bond pad connected to said at least one circuit; adhesively fixing a first plate of glass to said first side of said wafer substrate, said first plate of glass having an exterior surface and a substantially parallel interior surface; reducing a thickness of said wafer substrate by removing a portion of the second side thereof; separating said semiconductor devices by removing substrate material in said street areas, said semiconductor devices remaining fixed to said first glass plate; and applying a sealant material to said second side of said wafer substrate.
Claim 25
Dependent Claim
72 words
The method of claim 22, further comprising: forming an array of contact holes extending through said first glass plate to the at least one bond pad; metallizing said exterior surface of said first glass plate to form a pattern of conductive leads for connecting said at least one bond pad to said metallized exterior surface of said first glass plate; and singulating said semiconductor devices by separation thereof in said street areas.
Claim 26
Dependent Claim
50 words
The method in accordance with claim 23, further comprising the step of flattening, planarizing and polishing the exterior surface of said first glass plate in correlation with the second side of said wafer substrate after fixing said first glass plate to said first side of said wafer substrate with adhesive.
Claim 27
Dependent Claim
15 words
The method in accordance with claim 23, wherein said first plate of glass is photo-etchable.
Claim 28
Dependent Claim
32 words
The method in accordance with claim 23, wherein said reducing step includes planarizing the second side of said wafer substrate to be parallel with the exterior surface of said first glass plate.
Claim 29
Dependent Claim
21 words
The method in accordance with claim 23, wherein the thickness of said wafer substrate is reduced by a chemical etching step.
Claim 30
Dependent Claim
21 words
The method in accordance with claim 23, wherein the thickness of said wafer substrate is reduced by a mechanical polishing step.
Claim 31
Dependent Claim
24 words
The method in accordance with claim 23, wherein the thickness of said wafer substrate is reduced by mechanical polishing with a chemical etchant/abrasive slurry.
Claim 32
Dependent Claim
25 words
The method in accordance with claim 23, wherein said step of separating said semiconductor devices comprises etching through the wafer substrate in the street areas.
Claim 33
Dependent Claim
18 words
The method in accordance with claim 23, wherein said step of separating said semiconductor devices comprises mechanical scribing.
Claim 34
Dependent Claim
42 words
The method in accordance with claim 23, wherein said step of applying said sealant material to said second side of said wafer substrate comprises attaching a second plate of glass to said second side of said wafer substrate with a sealant adhesive.
Claim 35
Dependent Claim
30 words
The method in accordance with claim 23, wherein the step of applying said sealant material to said second side of said wafer substrate comprises application of a polymeric sealant thereto.
Claim 36
Dependent Claim
37 words
The method in accordance with claim 23, wherein the step of forming said contact holes comprises forming substantially linear holes through said first glass plate in an array substantially identical to the at least one bond pad.
Claim 37
Dependent Claim
25 words
The method in accordance with claim 34, wherein said substantially linear holes are formed by one of a photo-etching process and a mechanical drilling process.
Claim 38
Dependent Claim
63 words
The method in accordance with claim 23, wherein said metallizing step comprises applying a metal to said exterior surface of said first glass plate including said contact holes, and etching to provide at least one separate interconnect and at least one separate lead passing through said contact holes to connect said at least one separate interconnect with said at least one bond pad.
Claim 39
Dependent Claim
17 words
The method in accordance with claim 23, wherein said metallization is applied by chemical vapor deposition (CVD).
Claim 40
Dependent Claim
14 words
The method in accordance with claim 23 wherein said metallization is applied by sputtering.
Claim 41
Dependent Claim
23 words
The method in accordance with claim 23, wherein said metallizing step comprises application of one of tungsten, aluminum and copper, and alloys thereof.
Claim 42
Dependent Claim
21 words
The method in accordance with claim 23, wherein said metallizing step comprises application of one of palladium and an alloy thereof.
Claim 43
Dependent Claim
31 words
The method in accordance with claim 23, further comprising the step of applying an insulative sealant coating over said exterior surface of said first glass layer prior to the metallizing step.
Claim 44
Dependent Claim
14 words
The method in accordance with claim 41, wherein said insulative sealant comprises silicon nitride.
Claim 45
Independent Claim
220 words
A method of making semiconductor devices, said method comprising: providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having a circuit formed therein and an array of bond pads on a first side thereof and conductively connected to said circuit; forming a first sealing layer of glass on said first side of said wafer substrate as a hardenable fluid; hardening said first layer of glass; polishing and planarizing said hardened first glass layer to be parallel to said second side of said wafer substrate; reducing a thickness of said wafer substrate by removing a portion of the second side thereof; separating said semiconductor devices by removing substrate material in said street areas, said semiconductor devices remaining fixed to said first glass layer; applying a sealant material to said second side of said wafer substrate; forming an array of contact holes extending through said first glass layer to the array of bond pads; metallizing an exterior surface of said first glass layer to form a pattern of conductive leads for connecting said bond pads to said metallized exterior surface of said first glass layer; and singulating said semiconductor devices by separation thereof in said street areas.
Claim 46
Independent Claim
220 words
A method of making semiconductor devices, said method comprising: providing a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said wafer substrate with street areas therebetween, each of said plurality of semiconductor devices having a circuit formed therein and an array of bond pads on a first side thereof and conductively connected to said circuit; forming a first sealing layer of glass on said first side of said wafer substrate as a hardenable fluid; hardening said first layer of glass; polishing and planarizing said hardened first glass layer to be parallel to said second side of said wafer substrate; reducing a thickness of said wafer substrate by removing a portion of the second side thereof; separating said semiconductor devices by removing substrate material in said street areas, said semiconductor devices remaining fixed to said first glass layer; applying a sealant material to said second side of said wafer substrate; forming an array of contact holes extending through said first glass layer to the array of bond pads; metallizing an exterior surface of said first glass layer to form a pattern of conductive leads for connecting said bond pads to said metallized exterior surface of said first glass layer; and singulating said semiconductor devices by separation thereof in said street areas.
Claim 47
Dependent Claim
15 words
The method in accordance with claim 43, wherein said first layer of glass is photo-etchable.
Claim 48
Dependent Claim
32 words
The method in accordance with claim 43, wherein said reducing step includes planarizing the second side of said water substrate to be parallel with the exterior surface of said first glass layer.
Claim 49
Dependent Claim
21 words
The method in accordance with claim 43, wherein the thickness of said wafer substrate is reduced by a chemical etching step.
Claim 50
Dependent Claim
21 words
The method in accordance with claim 43, wherein the thickness of said wafer substrate is reduced by a mechanical polishing step.
Claim 51
Dependent Claim
24 words
The method in accordance with claim 43, wherein the thickness of said wafer substrate is reduced by mechanical polishing with a chemical etchant/abrasive slurry.
Claim 52
Dependent Claim
25 words
The method in accordance with claim 43, wherein said step of separating said semiconductor devices comprises etching through the wafer substrate in the street areas.
Claim 53
Dependent Claim
18 words
The method in accordance with claim 43, wherein said step of separating said semiconductor devices comprises mechanical scribing.
Claim 54
Dependent Claim
30 words
The method in accordance with claim 43, wherein the step of applying said sealant material to said second side of said wafer substrate comprises application of a polymeric sealant thereto.
Claim 55
Dependent Claim
35 words
The method in accordance with claim 43, wherein the step of forming said contact holes comprises forming substantially linear holes through said first glass layer in an array substantially identical to the bond pad array.
Claim 56
Dependent Claim
25 words
The method in accordance with claim 52, wherein said substantially linear holes are formed by one of a photo-etching process and a mechanical drilling process.
Claim 57
Dependent Claim
49 words
The method in accordance with claim 43, wherein said metallizing step comprises applying a metal to said exterior surface of said first glass layer including said contact holes, and etching to provide separate interconnects and leads passing through said contact holes to connect said interconnects with said bond pads.
Claim 58
Dependent Claim
17 words
The method in accordance with claim 43, wherein said metallization is applied by chemical vapor deposition (CVD).
Claim 59
Dependent Claim
14 words
The method in accordance with claim 43, wherein said metallization is applied by sputtering.
Claim 60
Dependent Claim
23 words
The method in accordance with claim 43, wherein said metallizing step comprises application of one of tungsten, aluminum and copper, and alloys thereof.
Claim 61
Dependent Claim
21 words
The method in accordance with claim 43, wherein said metallizing step comprises application of one of palladium and an alloy thereof.
Claim 62
Dependent Claim
36 words
The method in accordance with claim 43, further comprising the step of applying an insulative sealant coating over said exterior surface of said first glass layer at one of prior to and following the metallizing step.
Claim 63
Dependent Claim
15 words
The method in accordance with claim 59, wherein said insulative sealant coating comprises silicon nitride.
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