US6004873A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for reducing the pattern sensitivity of ozone assisted chemical vapor deposited (CVD) silicon oxide insulator layers
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-06-19
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Granted: 1999-12-21
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Expires: 2016-06-19
Abstract
Abstract A method for forming upon a patterned layer within an integrated circuit an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer having a diminished pattern sensitivity. There is first provided a semiconductor substrate. Formed upon the semiconductor substrate is a patterned layer which provides a pattern sensitivity to an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer. The patterned layer is also susceptible to modification with a plasma which reduces the pattern sensitivity of the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer. The patterned layer is treated with the plasma. Finally, the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer is formed upon the patterned layer. Optionally, a conformal insulator layer may be formed upon the patterned layer prior to forming the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer upon the patterned layer. The conformal insulator layer may optionally be treated with a second plasma.
Inventors
- 👤 Syun-Ming Jang
- 👤 Lu-Min Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6512; H10P14/6514; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
112 words
A method for forming an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer having diminished pattern sensitivity comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a patterned layer, the patterned layer providing a pattern sensitivity to an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer, the patterned layer being susceptible to modification with a plasma which reduces the pattern sensitivity of the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer; treating the patterned layer with the plasma; and, forming upon the patterned layer the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer.
Claim 2
Independent Claim
112 words
A method for forming an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer having diminished pattern sensitivity comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a patterned layer, the patterned layer providing a pattern sensitivity to an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer, the patterned layer being susceptible to modification with a plasma which reduces the pattern sensitivity of the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer; treating the patterned layer with the plasma; and, forming upon the patterned layer the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the patterned layer is a patterned conductor layer.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein the patterned conductor layer has formed upon its surface a patterned titanium nitride layer.
Claim 5
Dependent Claim
22 words
The method of claim 3 wherein the thickness of the patterned titanium nitride layer is from about 1000 to about 1400 angstroms.
Claim 6
Dependent Claim
25 words
The method of claim 3 wherein the areal density of the patterned titanium nitride layer upon the semiconductor substrate is greater than about 10 percent.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer employs Tetra Ethyl Ortho Silicate (TEOS) as a silicon source material.
Claim 8
Dependent Claim
31 words
The method of claim 6 wherein the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer is formed at an ozone:TEOS molar ratio of from about 12:1 to about 16:1.
Claim 9
Dependent Claim
12 words
The method of claim 1 wherein the plasma is a nitrogen plasma.
Claim 10
Dependent Claim
75 words
The method of claim 8 wherein the nitrogen plasma is provided at a nitrogen flow rate of about 400 to about 600 standard cubic centimeters per minute (sccm), a reactor chamber pressure of from about 1 to about 2 torr and a mixed radio frequency power of from about 40 to about 60 watts at a radio frequency of 13.56 MHz and about 420 to about 480 watts at a radio frequency of 350 kHz.
Claim 11
Dependent Claim
23 words
The method of claim 9 wherein the nitrogen plasma is provided for a time period of from about 160 to about 200 seconds.
Claim 12
Independent Claim
122 words
A method for forming an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer having diminished pattern sensitivity comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a patterned layer, the patterned layer providing a pattern sensitivity to an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer, the patterned layer being susceptible to modification with a plasma which reduces the pattern sensitivity of the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer; treating the patterned layer with the plasma; forming a conformal insulator layer upon the patterned layer; and, forming the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer upon the conformal insulator layer.
Claim 13
Independent Claim
122 words
A method for forming an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer having diminished pattern sensitivity comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a patterned layer, the patterned layer providing a pattern sensitivity to an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer, the patterned layer being susceptible to modification with a plasma which reduces the pattern sensitivity of the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer; treating the patterned layer with the plasma; forming a conformal insulator layer upon the patterned layer; and, forming the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer upon the conformal insulator layer.
Claim 14
Dependent Claim
39 words
The method of claim 11 wherein the patterned layer is a patterned conductor layer having upon its surface a patterned titanium nitride layer, the patterned titanium nitride layer having a thickness of from about 1000 to about 1400 angstroms.
Claim 15
Dependent Claim
25 words
The method of claim 12 wherein the areal density of the patterned titanium nitride layer upon the semiconductor substrate is greater than about 10 percent.
Claim 16
Dependent Claim
28 words
The method of claim 11 wherein the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer employs Tetra Ethyl Ortho Silicate (TEOS) as a silicon source material.
Claim 17
Dependent Claim
31 words
The method of claim 14 wherein the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer is formed at an ozone:TEOS molar ratio is from about 12:1 to about 16:1.
Claim 18
Dependent Claim
77 words
The method of claim 11 wherein the plasma is a nitrogen plasma provided at a nitrogen flow rate of about 400 to about 600 standard cubic centimeters per minute (sccm), a reactor chamber pressure of from about 1 to about 2 torr and a mixed radio frequency power of from about 40 to about 60 watts at a radio frequency of 13.56 MHz and about 420 to about 480 watts at a radio frequency of 350 kHz.
Claim 19
Dependent Claim
23 words
The method of claim 16 wherein the nitrogen plasma is provided for a time period of from about 160 to about 200 seconds.
Claim 20
Dependent Claim
33 words
The method of claim 11 wherein the conformal insulator layer is a conformal silicon oxide insulator layer formed upon the patterned layer at a thickness of from about 500 to about 2000 angstroms.
Claim 21
Dependent Claim
41 words
The method of claim 11 further comprising treating the conformal insulator with a second plasma prior to forming upon the conformal insulator layer the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer, the second plasma being a nitrogen plasma.
Claim 22
Independent Claim
126 words
A method for forming within an integrated circuit an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer having diminished pattern sensitivity comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a minimum of one transistor; forming upon the semiconductor substrate a patterned layer, the patterned layer providing a pattern sensitivity to an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer, the patterned layer being susceptible to modification with a plasma which reduces the pattern sensitivity of the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer; treating the patterned layer with the plasma; and, forming upon the patterned layer the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer.
Claim 23
Independent Claim
126 words
A method for forming within an integrated circuit an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer having diminished pattern sensitivity comprising: providing a semiconductor substrate; forming upon the semiconductor substrate a minimum of one transistor; forming upon the semiconductor substrate a patterned layer, the patterned layer providing a pattern sensitivity to an ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer, the patterned layer being susceptible to modification with a plasma which reduces the pattern sensitivity of the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer formed upon the patterned layer; treating the patterned layer with the plasma; and, forming upon the patterned layer the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer.
Claim 24
Dependent Claim
39 words
The method of claim 20 wherein the patterned layer is a patterned conductor layer having a patterned titanium nitride layer upon its surface, the patterned titanium nitride layer having a thickness of from about 1000 to about 1400 angstroms.
Claim 25
Dependent Claim
25 words
The method of claim 21 wherein the areal density of the patterned titanium nitride layer upon the semiconductor substrate is greater than about 10 percent.
Claim 26
Dependent Claim
40 words
The method of claim 20 wherein the ozone assisted Chemical Vapor Deposited (CVD) silicon oxide insulator layer employs Tetra Ethyl Ortho Silicate (TEOS) as a silicon source material at an ozone:TEOS molar ratio is from about 12:1 to about 16:1.
Claim 27
Dependent Claim
12 words
The method of claim 20 wherein the plasma is a nitrogen plasma.
Claim 28
Dependent Claim
75 words
The method of claim 24 wherein the nitrogen plasma is provided at a nitrogen flow rate of about 400 to about 600 standard cubic centimeters per minute (sccm), a reactor chamber pressure of from about 1 to about 2 torr and a mixed radio frequency power of from about 40 to about 60 watts at a radio frequency of 13.56 MHz and about 420 to about 480 watts at a radio frequency of 350 kHz.
Claim 29
Dependent Claim
24 words
The method of claim 25 wherein the nitrogen plasma treatment is undertaken for a time period of from about 160 to about 200 seconds.
References Cited (Backward Citations)
US5342808A
Cited
US5674783A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-20 | 2003-06-21 | 2003-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-20 | 2007-06-21 | 2007-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-20 | 2011-06-21 | 2011-12-21 | $7700.00 | Window Closed / Lapsed |