Patent US6002156A successfully refreshed from Google Patents.
US6002156A
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Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
Assignee: Winbond Electronics Corp
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Filing: 1997-09-16
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Granted: 1999-12-14
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Expires: 2017-09-16
Abstract
Abstract A MOSFET structure uses angled poly-gate segments positioned between drain and source diffusion regions such that the entire continuous gate element structure is within the active region in a substrate. The gate-to-source diffusion edges are continuous along the gate body, so as to cascade the snap-back action to enhance uniform turn on of the entire gate element during an ESD event. The angled gate segments provide a total gate-to-area ratio greater than that of a multi-finger-gate configuration within an equal size active region. In addition, the gate signal RC delay is sufficient to provide noise suppression of the output voltage when the MOSFET is used as a high current-drive CMOS output buffer.
Inventors
- 👤 Shi-Tron Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:09
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/811; H10D89/813; H10D89/815; H10D30/00; H10D30/60; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/519; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D62/124; H10D62/126
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
98 words
A MOSFET structure for enhancing uniform poly-gate turn-on during an ESD event, comprising: an active region within a substrate, a plurality of drain and source diffusion regions within said active region, a single-ended, continuous poly-gate element comprising a series of interconnected closed polygonal loops interpositioned between said drain and source diffusion regions, such that a continuous gate-to-source diffusion edge is formed along the entire outer edge of said poly-gate element, and with said drain diffusion regions being individually surrounded by the inner edges of said poly-gate polygonal loops, said poly-gate element being completely disposed within said active region.
Claim 2
Dependent Claim
98 words
A MOSFET structure for enhancing uniform poly-gate turn-on during an ESD event, comprising: an active region within a substrate, a plurality of drain and source diffusion regions within said active region, a single-ended, continuous poly-gate element comprising a series of interconnected closed polygonal loops interpositioned between said drain and source diffusion regions, such that a continuous gate-to-source diffusion edge is formed along the entire outer edge of said poly-gate element, and with said drain diffusion regions being individually surrounded by the inner edges of said poly-gate polygonal loops, said poly-gate element being completely disposed within said active region.
Claim 3
Dependent Claim
36 words
The MOSFET structure of claim 1 wherein said diffusion edges within said active oxide region cascade a snap-back mode along said poly-gate element, such that the entire said poly-gate element turns on during an ESD event.
Claim 4
Dependent Claim
32 words
The MOSFET structure of claim 1 wherein said poly-gate element, in association with inherent RC delays, causes suppression of noise signals when said MOSFET is used as a high current-drive output buffer.
Claim 5
Dependent Claim
24 words
The MOSFET structure of claim 1 wherein said poly-gate element has rounded corners in said active region to prevent an electric field crowding effect.
Claim 6
Dependent Claim
44 words
The MOSFET structure of claim 1 wherein said poly-gate element comprising said series of closed polygonal loops provides a total gate-to-area ratio within said active region which is greater than that of a multi-finger type of poly-gate element within an equal size active region.
Claim 7
Dependent Claim
20 words
The MOSFET structure of claim 1 wherein said poly-gate element is dual-ended, having an input end and a floating end.
Claim 8
Dependent Claim
16 words
The MOSFET structure of claim 6 wherein said poly-gate element includes additional segments with rounded corners.
Claim 9
Dependent Claim
79 words
A MOSFET structure for enhancing uniform poly-gate tum-on, comprising: an active region within a substrate, a plurality of source and drain diffusion regions within said active region, a continuous poly-gate element comprising a series of open polygonal loops interpositioned between said drain and source diffusion regions, such that a continuous gate-to-drain diffusion edge and a continuous gate-to-source diffusion edge are formed along the entire length of said poly-gate element, said poly-gate element being completely disposed within said active region.
Claim 10
Dependent Claim
79 words
A MOSFET structure for enhancing uniform poly-gate tum-on, comprising: an active region within a substrate, a plurality of source and drain diffusion regions within said active region, a continuous poly-gate element comprising a series of open polygonal loops interpositioned between said drain and source diffusion regions, such that a continuous gate-to-drain diffusion edge and a continuous gate-to-source diffusion edge are formed along the entire length of said poly-gate element, said poly-gate element being completely disposed within said active region.
Claim 11
Dependent Claim
37 words
The MOSFET structure of claim 8 wherein said diffusion edges within said active region cascade a snap-back mode along said poly-gate element, such that the entire said poly-gate element may be turned on during an ESD event.
Claim 12
Dependent Claim
32 words
The MOSFET structure of claim 8 wherein said poly-gate element, in association with inherent RC delays, causes suppression of noise signals when said MOSFET is used as a high current-drive output buffer.
Claim 13
Dependent Claim
24 words
The MOSFET structure of claim 8 wherein said poly-gate element has rounded corners in said active region to prevent an electric field crowding effect.
Claim 14
Dependent Claim
44 words
The MOSFET structure of claim 8 wherein said poly-gate element comprising said series of open polygonal loops provides a total gate-to-area ratio within said active region which is greater than that of a multi-finger type of poly-gate element within an equal size active region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-13 | 2003-06-14 | 2003-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-13 | 2007-06-14 | 2007-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-13 | 2011-06-14 | 2011-12-14 | $7700.00 | Window Closed / Lapsed |