Patent US6503819B2 successfully refreshed from Google Patents.
Patent US6001175A successfully refreshed from Google Patents.
US6001175A
Expired / Lapsed
US
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Crystal producing method and apparatus therefor
Assignee: Individual
•
Filing: 1996-03-04
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Granted: 1999-12-14
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Expires: 2016-03-04
Abstract
Abstract A method and apparatus of producing a crystal by using of vapor growth process, wherein: a high-frequency coil or conductor having a coil or conductor surface to generate a plane-like induction electric field is arranged so that at least one gas blowout port is connected to the coil or conductor surface so as to face a solid substrate; and a component element or a chemical compound is continuously precipitated and grown on a surface of the solid substrate at a temperature of not higher than the melting point of the solid substrate while the solid substrate is inductively heated by the high-frequency coil or conductor and a raw gas is supplied onto the surface of the solid substrate through the gas blowout port, to thereby produce a polycrystal or monocrystal thin film.
Inventors
- 👤 Mitsuhiro Maruyama
- 👤 Yasuhiro Maruyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:53
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/14; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1004
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
118 words
A method of producing a crystal by using of vapor growth process, comprising: arranging a high-frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port that faces a solid substrate; inductively heating said solid substrate by said high-frequency coil or conductor; cooling said high-frequency coil or conductor; supplying a gas onto a surface of said solid substrate through said at least one gas blowout port; and continuously precipitating and growing a component element or a chemical compound on said surface of said solid substrate at a temperature of not higher than the melting point of said solid substrate, to thereby produce a polycrystal or monocrystal thin film.
Claim 2
Independent Claim
118 words
A method of producing a crystal by using of vapor growth process, comprising: arranging a high-frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port that faces a solid substrate; inductively heating said solid substrate by said high-frequency coil or conductor; cooling said high-frequency coil or conductor; supplying a gas onto a surface of said solid substrate through said at least one gas blowout port; and continuously precipitating and growing a component element or a chemical compound on said surface of said solid substrate at a temperature of not higher than the melting point of said solid substrate, to thereby produce a polycrystal or monocrystal thin film.
Claim 3
Independent Claim
129 words
A method of producing a crystal by using a vapor growth process, comprising: arranging a high-frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port is that faces a solid substrate; inductively heating said solid substrate by said high-frequency coil or conductor; cooling said high-frequency coil or conductor; supplying a corrosive gas, a reducing gas, an oxidizing gas, or a neutral gas onto a surface of said solid substrate through said at least one gas blowout port; and removing a surface portion of said solid substrate by chemical etching or heat treatment on said solid substrate at a temperature of not higher than the melting point of said solid substrate, to thereby produce a polycrystal or monocrystal substrate.
Claim 4
Independent Claim
129 words
A method of producing a crystal by using a vapor growth process, comprising: arranging a high-frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port is that faces a solid substrate; inductively heating said solid substrate by said high-frequency coil or conductor; cooling said high-frequency coil or conductor; supplying a corrosive gas, a reducing gas, an oxidizing gas, or a neutral gas onto a surface of said solid substrate through said at least one gas blowout port; and removing a surface portion of said solid substrate by chemical etching or heat treatment on said solid substrate at a temperature of not higher than the melting point of said solid substrate, to thereby produce a polycrystal or monocrystal substrate.
Claim 5
Independent Claim
95 words
An apparatus for producing a crystal by using a vapor growth process, comprising: means for retaining a solid substrate; a high frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port that faces said solid substrate; means for cooling said high-frequency coil or conductor; means for inductively heating said solid substrate by said high-frequency coil or conductor; and means for supplying a gas onto a surface of said solid substrate through said gas blowout port to thereby produce a polycrystal or monocrystal thin film.
Claim 6
Independent Claim
95 words
An apparatus for producing a crystal by using a vapor growth process, comprising: means for retaining a solid substrate; a high frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port that faces said solid substrate; means for cooling said high-frequency coil or conductor; means for inductively heating said solid substrate by said high-frequency coil or conductor; and means for supplying a gas onto a surface of said solid substrate through said gas blowout port to thereby produce a polycrystal or monocrystal thin film.
Claim 7
Independent Claim
105 words
An apparatus for producing a crystal by using a vapor growth process, comprising: means for retaining a solid substrate; a high frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port that faces said solid substrate; means for cooling said high-frequency coil or conductor; means for inductively heating said solid substrate by said high-frequency coil or conductor; and means for supplying a corrosive gas, a reducing gas, an oxidizing gas or a neutral gas onto a surface of said solid substrate through said gas blowout port to thereby produce a polycrystal or monocrystal substrate.
Claim 8
Independent Claim
105 words
An apparatus for producing a crystal by using a vapor growth process, comprising: means for retaining a solid substrate; a high frequency coil or conductor having a surface to generate a plane-like induction electric field and at least one gas blowout port that faces said solid substrate; means for cooling said high-frequency coil or conductor; means for inductively heating said solid substrate by said high-frequency coil or conductor; and means for supplying a corrosive gas, a reducing gas, an oxidizing gas or a neutral gas onto a surface of said solid substrate through said gas blowout port to thereby produce a polycrystal or monocrystal substrate.
Claim 9
Independent Claim
55 words
An apparatus for producing a crystal according to claims 3 or 4, wherein the direction of gas blowout of said at least one gas blowout port of said high-frequency coil or conductor is perpendicular to said surface of said solid substrate or has an inclination angle with respect to said surface of said solid substrate.
Claim 10
Independent Claim
46 words
An apparatus for producing a crystal according to claims 3 or 4, wherein said high-frequency coil or conductor is made of gold, silver, copper, aluminum; and wherein said coil or conductor surface where said at least one gas blowout port is formed is a mirror surface.
Claim 11
Independent Claim
68 words
An apparatus for producing a crystal according to claims 3 or 4, wherein said solid substrate is on the surface of said high-frequency coil or conductor having said at least one gas blowout port so that said solid substrate is rotated or moved in a levitated state by said gas blowout and by a levitation force due to a high-frequency induction repulsion by said high-frequency coil or conductor.
Claim 12
Independent Claim
59 words
An apparatus for producing a crystal according to claims 3 or 4, further comprising: at least one optical path constituted by a hole or a transparent solid material and arranged so as to pierce the surface of said high-frequency coil or conductor, and means for radiating long wavelength light-rays through said optical path to thereby heat said solid substrate.
Claim 13
Independent Claim
53 words
An apparatus for producing a crystal according to claims 3 or 4, further comprising: at least one optical path constituted by a hole or a transparent solid material and arranged so as to pierce the surface of said high-frequency coil or conductor; and means for radiating short wavelength light-rays through said optical path.
Claim 14
Independent Claim
97 words
An apparatus for producing a crystal according to any one of claims 3 or 4, further comprising: at least one optical path constituted by a hole or a transparent solid material and arranged so as to pierce the surface of said high-frequency coil or conductor; means for detecting the surface temperature of said solid substrate through said optical path to thereby generate a detection output signal; and means for receiving said detection output signal through a feedback circuit and for adjusting an output of a high-frequency electric source to thereby regulate the temperature of said solid substrate.
Claim 15
Dependent Claim
35 words
A method of producing a crystal by using of vapor growth process according to claim 1, wherein said at least one blowout port is from 5 to 30 mm from said surface of said substrate.
Claim 16
Dependent Claim
35 words
An apparatus for producing a crystal by using a vapor growth process according to claim 3, wherein said at least one blowout port is from 5 to 30 mm from said surface of said substrate.
Claim 17
Independent Claim
34 words
An apparatus for producing a crystal by using a vapor growth process according to claims 3 or 4, wherein said high-frequency coil or conductor further comprises a plating of gold, silver, copper, or aluminum.
Claim 18
Dependent Claim
24 words
An apparatus for producing a crystal by using a vapor growth process according to claim 8, wherein said long wavelength light-rays are infrared rays.
Claim 19
Dependent Claim
24 words
An apparatus for producing a crystal by using a vapor growth process according to claim 7, wherein said short wavelength light-rays are violet rays.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-13 | 2003-06-14 | 2003-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-13 | 2007-06-14 | 2007-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-13 | 2011-06-14 | 2011-12-14 | $7700.00 | Window Closed / Lapsed |