US5998850A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tunable field plate
Assignee: Oracle America Inc
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Filing: 1998-02-24
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Granted: 1999-12-07
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Expires: 2018-02-24
Abstract
Abstract First and second semiconductor devices are separated by a field oxide on a semiconductor substrate, and a field plate is positioned over the field oxide. A leakage detector detects a field leakage current between the first and second semiconductor devices. A field plate generator tunes a potential of said field plate according to a magnitude of the field current detected by the leakage current detector. In this manner, field leakage is optimized, and total dose effects may be monitored for signs of device failure.
Inventors
- 👤 James B. Burr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:54
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/051; H10W10/10; H10W10/13; H10W10/50; Y; Y10; Y10S; Y10S257/00; Y10S257/921
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
79 words
A semiconductor circuit comprising: first and second semiconductor regions of a first conductivity type separated by a field oxide on a semiconductor bulk of a second conductivity type; a field plate located over said field oxide; a leakage detector which detects a field leakage current between said first and second semiconductor regions; and, a field plate generator which tunes a potential of said field plate according to a magnitude of the field current detected by said leakage current detector.
Claim 2
Dependent Claim
79 words
A semiconductor circuit comprising: first and second semiconductor regions of a first conductivity type separated by a field oxide on a semiconductor bulk of a second conductivity type; a field plate located over said field oxide; a leakage detector which detects a field leakage current between said first and second semiconductor regions; and, a field plate generator which tunes a potential of said field plate according to a magnitude of the field current detected by said leakage current detector.
Claim 3
Dependent Claim
43 words
A semiconductor circuit as claimed in claim 1, wherein said first semiconductor region is one of a source and a drain region of a first transistor, and said second region is one of a source and a drain region of a second transistor.
Claim 4
Dependent Claim
24 words
A semiconductor circuit as claimed in claim 2, wherein a gate of each of said first and second transistors has an off-potential applied thereto.
Claim 5
Dependent Claim
26 words
A semiconductor circuit as claimed in claim 1, wherein said first semiconductor region is tied to a supply voltage and said second semiconductor region is grounded.
Claim 6
Dependent Claim
26 words
A semiconductor circuit as claimed in claim 3, wherein said first semiconductor region is tied to a supply voltage and said second semiconductor region is grounded.
Claim 7
Dependent Claim
55 words
A semiconductor circuit as claimed in claim 1, wherein said current detector includes a current mirror which receives a reference current and the field leakage current, and wherein said field plate generator includes a comparator, having an output coupled to said field plate, which compares an potential across said current mirror with a reference potential.
Claim 8
Dependent Claim
107 words
A semiconductor device comprising multiple functional circuit units in a semiconductor chip, and multiple semiconductor circuits provided within respective ones of said multiple functional circuit units, each of said semiconductor circuits comprising: first and second semiconductor regions of a first conductivity type separated by a field oxide on a semiconductor bulk of a second conductivity type; a field plate located over said field oxide; a leakage detector which detects a field leakage current between said first and second semiconductor regions; and, a field plate generator which tunes a potential of said field plate according to a magnitude of the field current detected by said leakage current detector.
Claim 9
Dependent Claim
107 words
A semiconductor device comprising multiple functional circuit units in a semiconductor chip, and multiple semiconductor circuits provided within respective ones of said multiple functional circuit units, each of said semiconductor circuits comprising: first and second semiconductor regions of a first conductivity type separated by a field oxide on a semiconductor bulk of a second conductivity type; a field plate located over said field oxide; a leakage detector which detects a field leakage current between said first and second semiconductor regions; and, a field plate generator which tunes a potential of said field plate according to a magnitude of the field current detected by said leakage current detector.
Claim 10
Independent Claim
69 words
A method for countering total dose effects in a semiconductor device, comprising: detecting a field leakage current between first and second semiconductor regions of a first conductivity type separated by a field oxide on a semiconductor bulk of a second conductivity type; and, tuning a potential of a field plate located over said field oxide according to a magnitude of the field current detected by said leakage current detector.
Claim 11
Independent Claim
69 words
A method for countering total dose effects in a semiconductor device, comprising: detecting a field leakage current between first and second semiconductor regions of a first conductivity type separated by a field oxide on a semiconductor bulk of a second conductivity type; and, tuning a potential of a field plate located over said field oxide according to a magnitude of the field current detected by said leakage current detector.
Claim 12
Dependent Claim
39 words
A method as claimed in claim 8, further comprising comparing the field leakage current with a reference current, and adjusting the potential of the field plate to minimize a difference between the field leakage current and the reference current.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-12-06 | 2003-06-07 | 2003-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-06 | 2007-06-07 | 2007-12-07 | $3760.00 | Window Closed / Lapsed |
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