US5991194A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for providing accessible device information in digital memory devices
Assignee: ASSIGNOR AND INTEGRATED SILICON SOLUTION Inc
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Filing: 1997-10-24
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Granted: 1999-11-23
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Expires: 2017-10-24
Abstract
Abstract A memory device (100) includes a user device information sector (122) in addition to normal sectors (124) of a memory array. The user device information sector includes a product identification field (240) and a restricted address list field (250), and optionally includes a customer identification number field (220) and a serial number field (230). The product identification field includes such information as the manufacturer ID, a part number ID, package/speed identification, temperature/voltage identification, and byte locations for special options. The device identification field is factory programmed using a high voltage enabling signal applied to a write control logic circuit (102) in the memory device in conjunction with a "Device Information Sector Program" instruction is applied to the SPI command and control logic (110). The device information sector is read from the application using a "Read Device Information" instruction. Inadvertent corruption of the device information sector is avoided since a high voltage typically is not available in the application, and the "Device Information Sector Program" instruction is not in the application command set.
Inventors
- 👤 Robin J. Jigour
- 👤 Asim A. Bajwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:04
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/06; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/20; G11C16/22
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
92 words
A method of providing secure device information for a memory device operable at a normal dence voltage to read and write data to a data area thereof, comprising: applying a voltage signal greater than the normal device voltage to write to a device information area of the memory device; furnishing an instruction to the memory device to program the device information sector, the instruction being accompanied by a data field containing the device information; and programming the device information sector with the device information in response to the applying and furnishing steps.
Claim 2
Independent Claim
92 words
A method of providing secure device information for a memory device operable at a normal dence voltage to read and write data to a data area thereof, comprising: applying a voltage signal greater than the normal device voltage to write to a device information area of the memory device; furnishing an instruction to the memory device to program the device information sector, the instruction being accompanied by a data field containing the device information; and programming the device information sector with the device information in response to the applying and furnishing steps.
Claim 3
Dependent Claim
50 words
A method as in claim 1 further comprising: reading the device information from the device information sector using ordinary device voltages; reading data from the data area of the memory device using ordinary device voltages; and programming data into the data area of the memory device using ordinary device voltages.
Claim 4
Dependent Claim
14 words
A method as in claim 1 wherein the device information comprises restricted address information.
Claim 5
Dependent Claim
13 words
A method as in claim 1 wherein the device information comprises test information.
Claim 6
Dependent Claim
16 words
A method as in claim 1 wherein the device information comprises customer and serial number information.
Claim 7
Dependent Claim
105 words
A digital memory operable at a normal device voltage to read and write data to a data area thereof; comprising: a memory array; row and column decoders coupled to the memory array; a device information region coupled to the column decoders; a voltage detector activated at a voltage greater than the normal device voltage and having an output coupled to a program-enable access node of the device information sector; and an instruction decoder coupled to the row and column decoders, to data nodes of the memory array, to the access node of the device information region, and to data nodes of the device information sector.
Claim 8
Dependent Claim
105 words
A digital memory operable at a normal device voltage to read and write data to a data area thereof; comprising: a memory array; row and column decoders coupled to the memory array; a device information region coupled to the column decoders; a voltage detector activated at a voltage greater than the normal device voltage and having an output coupled to a program-enable access node of the device information sector; and an instruction decoder coupled to the row and column decoders, to data nodes of the memory array, to the access node of the device information region, and to data nodes of the device information sector.
Claim 9
Dependent Claim
103 words
A memory device operable at a normal device voltage to read and write data to a data area thereof, comprising: means for applying a voltage signal greater than the normal device voltage to access a device information area of the memory device, the device information area being separate from the data area of the memory device; means for furnishing an instruction to the memory device to program the device information sector, the instruction being accompanied by a data field containing the device information; and means for programming the device information sector with the device information in response to the applying and furnishing steps.
Claim 10
Dependent Claim
103 words
A memory device operable at a normal device voltage to read and write data to a data area thereof, comprising: means for applying a voltage signal greater than the normal device voltage to access a device information area of the memory device, the device information area being separate from the data area of the memory device; means for furnishing an instruction to the memory device to program the device information sector, the instruction being accompanied by a data field containing the device information; and means for programming the device information sector with the device information in response to the applying and furnishing steps.
Claim 11
Dependent Claim
56 words
A method as in claim 7 further comprising: means for reading the device information from the device information sector using ordinary device voltages; means for reading data from the data area of the memory device using ordinary device voltages; and means for programming data into the data area of the memory device using ordinary device voltages.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-22 | 2003-05-24 | 2003-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-22 | 2007-05-24 | 2007-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-22 | 2011-05-24 | 2011-11-23 | $7700.00 | Window Closed / Lapsed |