Patent US5989969A successfully refreshed from Google Patents.
US5989969A
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Method of producing silicon layer having surface controlled to be uneven
Assignee: Renesas Electronics Corp
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Filing: 1997-09-08
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Granted: 1999-11-23
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Expires: 2017-09-08
Abstract
Abstract A method of forming a silicon layer disclosed herein includes the steps of depositing an amorphous silicon layer on a substrate, irradiating a silane gas to the substrate, and performing an annealing process in a high vacuum or in an inert gas. The amorphous silicon layer is thereby converted into a silicon layer having an uneven surface caused by hemispherical or spherical silicon grains. The annealing process may be performed while irradiating a hydrogen gas or an oxidizing gas. In this case, such a silicon layer that has an even surface is formed.
Inventors
- 👤 Hirohito Watanabe
- 👤 Ichiro Honma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:20
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/125; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
108 words
A method of fabricating a semiconductor device comprising: selectively forming an amorphous silicon layer on a substrate; irradiating an SiH 4 gas to said amorphous silicon layer to thereby form a amorphous silicon thin film thereon; and stopping irradiating said SiH 4 gas and then performing an annealing process on said substrate to thereby form a plurality of crystal nuclei at the surface of said amorphous silicon thin film and grow each of said crystal nuclei as a silicon grain, said amorphous silicon layer and said amorphous silicon thin film being converted into such a silicon layer that has an uneven surface caused by growth of silicon grains.
Claim 2
Independent Claim
108 words
A method of fabricating a semiconductor device comprising: selectively forming an amorphous silicon layer on a substrate; irradiating an SiH 4 gas to said amorphous silicon layer to thereby form a amorphous silicon thin film thereon; and stopping irradiating said SiH 4 gas and then performing an annealing process on said substrate to thereby form a plurality of crystal nuclei at the surface of said amorphous silicon thin film and grow each of said crystal nuclei as a silicon grain, said amorphous silicon layer and said amorphous silicon thin film being converted into such a silicon layer that has an uneven surface caused by growth of silicon grains.
Claim 3
Dependent Claim
17 words
The method as claimed in claim 1, wherein said annealing process is performed in a vacuum atmosphere.
Claim 4
Dependent Claim
17 words
The method as claimed in claim 1, wherein said annealing process is performed in an non-oxidizing atmosphere.
Claim 5
Dependent Claim
26 words
The method as claimed in claim 1, wherein said annealing process is performed at a temperature higher than the temperature for irradiating said SiH 4 gas.
Claim 6
Independent Claim
121 words
A method of fabricating a semiconductor device comprising: selectively forming an amorphous silicon layer on an insulating film covering a semiconductor substrate; irradiating a siliane gas thereby depositing an amorphous silicon thin film on a surface of said amorphous silicon layer except for a surface of said insulating film; and stopping irradiating said silane gas and then performing an annealing operation to thereby form a plurality of crystal nuclei at a surface of said amorphous silicon thin film and grow each of said crystal nuclei as a silicon grain, said amorphous silicon layer doped with impurities and said amorphous silicon thin film being thereby converted into such a silicon layer that has an uneven surface caused by growth of silicon grains.
Claim 7
Independent Claim
121 words
A method of fabricating a semiconductor device comprising: selectively forming an amorphous silicon layer on an insulating film covering a semiconductor substrate; irradiating a siliane gas thereby depositing an amorphous silicon thin film on a surface of said amorphous silicon layer except for a surface of said insulating film; and stopping irradiating said silane gas and then performing an annealing operation to thereby form a plurality of crystal nuclei at a surface of said amorphous silicon thin film and grow each of said crystal nuclei as a silicon grain, said amorphous silicon layer doped with impurities and said amorphous silicon thin film being thereby converted into such a silicon layer that has an uneven surface caused by growth of silicon grains.
Claim 8
Dependent Claim
51 words
The method as claimed in claim 5, wherein said insulating film has a hole to expose a part of said semiconductor substrate, said amorphous silicon layer making contact with said part of said semiconductor substrate and being doped with impurities, and said amorphous silicon thin film being doped with no impurity.
Claim 9
Dependent Claim
31 words
The method as claimed in claim 6, wherein a portion of said impurities doped into said amorphous silicon layer is diffused into said amorphous silicon thin film by said annealing process.
Claim 10
Dependent Claim
26 words
The method as claimed in claim 5, wherein said annealing process is performed at a temperature higher than the temperature for irradiating said SiH 4 gas.
Claim 11
Independent Claim
185 words
A method of producing a semiconductor device comprising: covering a semiconductor substrate with an insulating film; selectively forming a hole to expose a part of said semiconductor substrate; selectively forming on said insulating film an amorphous silicon layer doped with impurities, said amorphous silicon layer doped with impurities being in electrical contact with said part of said semiconductor substrate through said hole; irradiating an SiH 4 gas to thereby form an amorphous silicon thin film on a surface of said amorphous silicon layer doped with impurities; stopping irradiating said SiH 4 gas and then performing an annealing operation to thereby form a plurality of crystal nuclei at a surface of said amorphous silicon thin film and grow each of said crystal nuclei as a silicon grain, said amorphous silicon layer doped with impurities and said amorphous silicon thin film being thereby converted into such a silicon layer that has an uneven surface caused by growth of silicon grains; and performing an additional annealing operation to allow a part of said impurities doped into said amorphous silicon layer to diffuse into each of said silicon grains.
Claim 12
Independent Claim
185 words
A method of producing a semiconductor device comprising: covering a semiconductor substrate with an insulating film; selectively forming a hole to expose a part of said semiconductor substrate; selectively forming on said insulating film an amorphous silicon layer doped with impurities, said amorphous silicon layer doped with impurities being in electrical contact with said part of said semiconductor substrate through said hole; irradiating an SiH 4 gas to thereby form an amorphous silicon thin film on a surface of said amorphous silicon layer doped with impurities; stopping irradiating said SiH 4 gas and then performing an annealing operation to thereby form a plurality of crystal nuclei at a surface of said amorphous silicon thin film and grow each of said crystal nuclei as a silicon grain, said amorphous silicon layer doped with impurities and said amorphous silicon thin film being thereby converted into such a silicon layer that has an uneven surface caused by growth of silicon grains; and performing an additional annealing operation to allow a part of said impurities doped into said amorphous silicon layer to diffuse into each of said silicon grains.
Claim 13
Dependent Claim
44 words
The method as claimed in claim 9, further comprising: forming a dielectric film on said uneven surface of said silicon layer; and forming a conductive layer on said dielectric layer; said silicon layer, said dielectric layer and said conductive layer thereby constituting a capacitor.
Claim 14
Dependent Claim
42 words
The method as claimed in claim 9, wherein said irradiating said SiH 4 is performed such that said amorphous silicon thin film is deposited on the surface of said amorphous silicon layer without being deposited on a surface of said insulating film.
References Cited (Backward Citations)
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