US5985733A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a T-shaped field oxide layer and a method for fabricating the same
Assignee: SK Hynix Inc
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Filing: 1997-06-26
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Granted: 1999-11-16
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Expires: 2017-06-26
Abstract
Abstract A semiconductor device having an adjacent P-well and N-well, such as a complementary metal oxide semiconductor (CMOS) transistor, on a silicon on insulator (SOI) substrate has a latch-up problem caused by the parasitic bipolar effect. This invention provides a semiconductor device removing the latch-up problem and methods for fabricating the same. A semiconductor device according to the present invention has a T-shaped field oxide layer connected to a buried oxide layer of the SOI substrate to prevent the latch-up problem.
Inventors
- 👤 Yo Hwan Koh
- 👤 Jin Hyeok Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H01; H01M; H01M50/00; H01M50/10; H01M50/116; H01M50/124; H01M50/1243; H01M6/00; H01M6/04; H01M6/06; H01M6/08; H01M6/085; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/061; H10W10/10; H10W10/17; H10W10/181; H01M2300/00; H01M2300/0002; H01M2300/0014; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
148 words
A method for fabricating a semiconductor devices having plurality of wells, comprising the steps of: forming a buried oxide layer and a silicon layer on a silicon substrate; forming wells in said silicon layer; forming a silicon nitride layer on said silicon layer; selectively etching said silicon nitride layer to form a first opening on a boundary region between said wells; forming photoresist patterns on the resulting structure, wherein said first opening is not entirely covered; etching said silicon layer to form a second opening using said photoresist patterns as an etching mask, exposing a portion of said buried oxide layer, so that a width of said second opening is smaller than that of said first opening; removing said photoresist patterns; and forming a field oxide layer in said first and second opening, wherein a portion of said field oxide layer is connected to said buried oxide layer.
Claim 2
Independent Claim
148 words
A method for fabricating a semiconductor devices having plurality of wells, comprising the steps of: forming a buried oxide layer and a silicon layer on a silicon substrate; forming wells in said silicon layer; forming a silicon nitride layer on said silicon layer; selectively etching said silicon nitride layer to form a first opening on a boundary region between said wells; forming photoresist patterns on the resulting structure, wherein said first opening is not entirely covered; etching said silicon layer to form a second opening using said photoresist patterns as an etching mask, exposing a portion of said buried oxide layer, so that a width of said second opening is smaller than that of said first opening; removing said photoresist patterns; and forming a field oxide layer in said first and second opening, wherein a portion of said field oxide layer is connected to said buried oxide layer.
Claim 3
Dependent Claim
28 words
A method in accordance with claim 1, wherein said method further comprises the step of forming ion-doped layers between said field oxide layer and said buried oxide layer.
Claim 4
Dependent Claim
17 words
A method in accordance with claim 1, wherein said silicon layer is a single crystal silicon layer.
Claim 5
Dependent Claim
25 words
A method in accordance with claim 2, wherein said ion-doped layer is formed by implanting ions into said silicon layer beneath said field oxide layer.
Claim 6
Dependent Claim
24 words
A method in accordance with claim 1, wherein said method further comprises the step of forming a pad oxide layer on said silicon layer.
Claim 7
Independent Claim
97 words
A method for fabricating a semiconductor devices having plurality of wells, comprising the steps of: forming a buried oxide layer and a silicon layer on a silicon substrate; forming wells in said silicon layer; forming a silicon nitride layer on said silicon layer; selectively etching said silicon nitride layer to form a first opening on the boundary region between said wells; forming a field oxide layer in said first opening; etching a portion of the said field oxide layer and said silicon layer to form a second opening; and filling with a dielectric layer said second opening.
Claim 8
Independent Claim
97 words
A method for fabricating a semiconductor devices having plurality of wells, comprising the steps of: forming a buried oxide layer and a silicon layer on a silicon substrate; forming wells in said silicon layer; forming a silicon nitride layer on said silicon layer; selectively etching said silicon nitride layer to form a first opening on the boundary region between said wells; forming a field oxide layer in said first opening; etching a portion of the said field oxide layer and said silicon layer to form a second opening; and filling with a dielectric layer said second opening.
Claim 9
Dependent Claim
35 words
A method in accordance with claim 6, wherein the step of filling said second opening with said dielectric layer further comprises the step of forming an oxide layer on side walls of said exposed wells.
Claim 10
Dependent Claim
23 words
A method in accordance with claim 6, wherein said dielectric layer is one of a silicon nitride layer and a silicon oxide layer.
Claim 11
Dependent Claim
17 words
A method in accordance with claim 6, wherein said silicon layer is a single crystal silicon layer.
Claim 12
Dependent Claim
24 words
A method in accordance with claim 6, wherein said method further comprises the step of forming a pad oxide layer on said silicon layer.
Claim 13
Dependent Claim
28 words
A method in accordance with claim 6, wherein said method further comprises the step of forming ion-doped layers between said field oxide layer and said buried oxide layer.
Claim 14
Dependent Claim
29 words
A method in accordance with claim 11, wherein said ion-doped layer is a doped silicon layer formed by implanting ions into said silicon layer beneath said field oxide layer.
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