US5981327A
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Method for forming wells of semiconductor device
Assignee: SK Hynix Inc
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Filing: 1998-03-17
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Granted: 1999-11-09
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Expires: 2018-03-17
Abstract
Abstract A method for forming wells of a semiconductor device, comprising the steps of forming a plurality of field insulating layers on a field region of a semiconductor substrate; forming first impurity regions of a first conductive type at a first depth beneath a surface of the semiconductor substrate; forming first impurity regions of a second conductive type beneath the surface of the semiconductor substrate at a second depth between the field insulating layers; selectively forming second impurity regions of the second conductive type in the first impurity regions of the first conductive type between adjacent field insulating layers; forming second impurity regions of the first conductive type in the first impurity regions of the second conductive type at both sides of the second impurity regions of the second conductive type; and diffusing the first and second impurity regions of the first conductive type and the first and second impurity regions of the second conductive type by a drive-in process to form a first conductive type shield region, a first conductive type well, and first and second wells of a second conductive type.
Inventors
- 👤 Jin-Ho Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:12
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/031; H10W15/00; H10P; H10P30/00; H10P30/20; H10P30/22; H10W10/30; H10W15/01
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
182 words
A method for forming wells of a semiconductor device, comprising the steps of: forming a plurality of field insulating layers on a field region of a semiconductor substrate; forming first impurity regions of a first conductive type at a first depth beneath a surface of the semiconductor substrate; forming first impurity regions of a second conductive type beneath the surface of the semiconductor substrate at a second depth between the field insulating layers; selectively forming second impurity regions of the second conductive type in the first impurity regions of the first conductive type between adjacent field insulating layers; forming second impurity regions of the first conductive type in the first impurity regions of the second conductive type at both sides of the second impurity regions of the second conductive type; and diffusing the first and second impurity regions of the first conductive type and the first and second impurity regions of the second conductive type by a drive-in process to form a first conductive type shield region, a first conductive type well, and first and second wells of a second conductive type.
Claim 2
Independent Claim
182 words
A method for forming wells of a semiconductor device, comprising the steps of: forming a plurality of field insulating layers on a field region of a semiconductor substrate; forming first impurity regions of a first conductive type at a first depth beneath a surface of the semiconductor substrate; forming first impurity regions of a second conductive type beneath the surface of the semiconductor substrate at a second depth between the field insulating layers; selectively forming second impurity regions of the second conductive type in the first impurity regions of the first conductive type between adjacent field insulating layers; forming second impurity regions of the first conductive type in the first impurity regions of the second conductive type at both sides of the second impurity regions of the second conductive type; and diffusing the first and second impurity regions of the first conductive type and the first and second impurity regions of the second conductive type by a drive-in process to form a first conductive type shield region, a first conductive type well, and first and second wells of a second conductive type.
Claim 3
Dependent Claim
37 words
The method as claimed in claim 1, wherein the step of forming first impurity regions of the first conductive type includes implanting phosphorus ions having a first concentration with a first high energy without using a mask.
Claim 4
Dependent Claim
16 words
The method as claimed in claim 2, wherein the first high energy is approximately 500 KeV.
Claim 5
Dependent Claim
41 words
The method as claimed in claim 2, wherein the step of forming second impurity regions of the second conductive type includes implanting ions having a second concentration with a second high energy, the second concentration being higher than the first concentration.
Claim 6
Dependent Claim
31 words
The method as claimed in claim 4, wherein the ions implanted in forming the second impurity regions of the second conductive type include one of B ions and BF 2 ions.
Claim 7
Dependent Claim
20 words
The method as claimed in claim 4, wherein a photoresist pattern is used as a mask when implanting the ions.
Claim 8
Dependent Claim
40 words
The method as claimed in claim 1, wherein the step of forming first impurity regions of the second conductive type includes implanting B ions or BF 2 ions having a third concentration with a low energy without using a mask.
Claim 9
Dependent Claim
41 words
The method as claimed in claim 7, wherein the step of forming second impurity regions of the first conductive type includes implanting phosphorus ions having a fourth concentration with a low energy, the fourth concentration being higher than the third concentration.
Claim 10
Dependent Claim
25 words
The method as claimed in claim 8, wherein a photoresist pattern is used as a mask when implanting the phosphorous ions having the fourth concentration.
Claim 11
Dependent Claim
17 words
The method as claimed in claim 1, wherein the first depth is deeper than the second depth.
Claim 12
Dependent Claim
34 words
The method as claimed in claim 1, further comprising the step of forming a buffer oxide layer on the semiconductor substrate before the step of forming first impurity regions of a first conductive type.
Claim 13
Dependent Claim
22 words
The method as claimed in claim 1, wherein the second depth is level with bottoms of the plurality of field insulating layers.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2006-11-08 | 2007-05-10 | 2007-11-09 | $3760.00 | Window Closed / Lapsed |
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