Patent US5972799A successfully refreshed from Google Patents.
US5972799A
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US
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Dry etching method
Assignee: Tokyo Electron Ltd
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Filing: 1997-12-29
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Granted: 1999-10-26
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Expires: 2017-12-29
Abstract
Abstract There is provided a dry etching method which does not contribute to earth anathermal due to the green house effect and which has a good etching characteristics. According to the present invention, the flow rates of Ar, O 2 , and C 3 F 6 supplied from gas sources 152, 154 and 156 are regulated by a mass flow controller MFC 146, 148 and 150 and valves 140, 142 and 144, respectively, to be mixed. The mixed gas is introduced onto a wafer W via a gas introducing pipe 138, a gas inlet 134, a space 130 and through holes 124a while the flow ratio of O 2 to C 3 F 6 is set to be 0.1≦O 2 /C 3 F 6 ≦1.0 and the partial pressure of C 3 F 6 is set to be in the range of from 0.5 mTorr to 2.0 mTorr.
Inventors
- 👤 Akira Koshiishi
- 👤 Ryuji Honda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:16
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
141 words
A dry etching method comprising the steps of: preparing a processing gas being a mixed gas consisting essentially of C 3 F 6 , O 2 and Ar; introducing said processing gas into a pressure-diminishable processing chamber; producing plasma in said processing chamber under a reduced-pressure atmosphere; and etching a silicon oxide layer formed on a surface to be processed, of an object to be processed in said processing chamber, wherein a flow ratio of said O 2 , to said C 3 F 6 of said mixed gas is set to be 0.1≦O 2 /C 3 F 6 ≦1.0, and a partial pressure of said C 3 F 6 in said mixed gas is set to be in a range of from 0.5 mTorr to 2.0 mTorr, and said processing gas is introduced uniformly on said surface to be processed.
Claim 2
Dependent Claim
141 words
A dry etching method comprising the steps of: preparing a processing gas being a mixed gas consisting essentially of C 3 F 6 , O 2 and Ar; introducing said processing gas into a pressure-diminishable processing chamber; producing plasma in said processing chamber under a reduced-pressure atmosphere; and etching a silicon oxide layer formed on a surface to be processed, of an object to be processed in said processing chamber, wherein a flow ratio of said O 2 , to said C 3 F 6 of said mixed gas is set to be 0.1≦O 2 /C 3 F 6 ≦1.0, and a partial pressure of said C 3 F 6 in said mixed gas is set to be in a range of from 0.5 mTorr to 2.0 mTorr, and said processing gas is introduced uniformly on said surface to be processed.
Claim 3
Dependent Claim
155 words
A dry etching method comprising the steps of: preparing a processing gas being a mixed gas consisting essentially of C 3 F 6 , O 2 , Ar and He; introducing said processing gas into a pressure-diminishable processing chamber; producing plasma in said processing chamber under a reduced-pressure atmosphere, said He promoting dissociation of said C 3 F 6 ; and etching a silicon oxide layer formed on a surface to be processed, of an object to be processed in said processing chamber, wherein a flow ratio of said O 2 to said C 3 F 6 of said mixed gas is set to be 0.1 O 2 /C 3 F 6 ≦1.0, ≦1.0, and a partial pressure of said C 3 F 6 in said mixed gas is set to be in a range of from 0.5 mTorr to 2.0 mTorr, and said processing gas is introduced uniformly on said surface to be processed.
Claim 4
Dependent Claim
155 words
A dry etching method comprising the steps of: preparing a processing gas being a mixed gas consisting essentially of C 3 F 6 , O 2 , Ar and He; introducing said processing gas into a pressure-diminishable processing chamber; producing plasma in said processing chamber under a reduced-pressure atmosphere, said He promoting dissociation of said C 3 F 6 ; and etching a silicon oxide layer formed on a surface to be processed, of an object to be processed in said processing chamber, wherein a flow ratio of said O 2 to said C 3 F 6 of said mixed gas is set to be 0.1 O 2 /C 3 F 6 ≦1.0, ≦1.0, and a partial pressure of said C 3 F 6 in said mixed gas is set to be in a range of from 0.5 mTorr to 2.0 mTorr, and said processing gas is introduced uniformly on said surface to be processed.
References Cited (Backward Citations)
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