Patent US1809526A successfully refreshed from Google Patents.
Patent US451436A successfully refreshed from Google Patents.
US5963837A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of planarizing the semiconductor structure
Assignee: Polaris Innovations Ltd
•
Filing: 1997-04-30
•
Granted: 1999-10-05
•
Expires: 2017-04-30
Abstract
Abstract A method for planarizing a semiconductor structure having a first surface region with a high aspect ratio topography and a second surface region with a low aspect ratio topography. A flowable material is deposited over the first and second surface regions of the structure. A portion of the material fills gaps in the high aspect ratio topography to form a substantially planar surface over the high aspect ratio topography. A doped layer, for example phosphorus doped glass, is formed over the flowable oxide material. The doped layer is disposed over the high aspect ratio and over the low aspect ratio regions. Upper surface portions over the low aspect ratio region are higher than an upper surface of the flowable material. The upper portion of the doped layer is removed over both the first and second surface portions to form a layer with a substantially planar surface above both the high aspect ratio region and the low aspect ratio region. The method is used for filling gaps, such as gaps between adjacent gate electrodes formed in a gate electrode surface region of a semiconductor structure.
Inventors
- 👤 Matthias Ilg
- 👤 Dirk Tobben
- 👤 Peter Weigand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
249 words
A method for planarizing a semiconductor structure having a first surface region of a substrate with a high aspect ratio topography and a second surface region of the substrate with a low aspect ratio topography, such method comprising the steps of: depositing a flowable material over the first and second surface regions of the substrate, such material being characterized in that after deposition the material has a substantially planar surface, a portion of the material filling gaps in the high aspect ratio topography of the first surface region and forming a substantially planar surface over the high aspect ratio topography first surface region and a substantially planar surface over the low aspect ratio second surface region, the planar surface over the first surface region being at a different level over the substrate than the planar surface over the second surface region; and forming a doped layer over the deposited flowable material, the doped layer being formed over the high aspect ratio and over the low aspect ratio first and second surface regions, upper surface portions of the doped layer over the low aspect ratio second surface region being higher than upper surface portions of the deposited flowable material over the high aspect ratio first surface regions; and removing upper surface portions of the doped layer over both the first and second surface portions to form the doped layer with a substantially planar surface, such planar surface of the doped layer extending above both the first and second surface regions.
Claim 2
Independent Claim
249 words
A method for planarizing a semiconductor structure having a first surface region of a substrate with a high aspect ratio topography and a second surface region of the substrate with a low aspect ratio topography, such method comprising the steps of: depositing a flowable material over the first and second surface regions of the substrate, such material being characterized in that after deposition the material has a substantially planar surface, a portion of the material filling gaps in the high aspect ratio topography of the first surface region and forming a substantially planar surface over the high aspect ratio topography first surface region and a substantially planar surface over the low aspect ratio second surface region, the planar surface over the first surface region being at a different level over the substrate than the planar surface over the second surface region; and forming a doped layer over the deposited flowable material, the doped layer being formed over the high aspect ratio and over the low aspect ratio first and second surface regions, upper surface portions of the doped layer over the low aspect ratio second surface region being higher than upper surface portions of the deposited flowable material over the high aspect ratio first surface regions; and removing upper surface portions of the doped layer over both the first and second surface portions to form the doped layer with a substantially planar surface, such planar surface of the doped layer extending above both the first and second surface regions.
Claim 3
Dependent Claim
24 words
The method recited in claim 1 wherein the step of forming the doped layer comprises the step of chemical vapor depositing phosphorus doped glass.
Claim 4
Dependent Claim
23 words
The method recited in claim 1 wherein the step of depositing the flowable material comprises the step of spin depositing such flowable material.
Claim 5
Dependent Claim
21 words
The method recited in claim 1 wherein the step of depositing the flowable material comprises the step of using gaseous deposition.
Claim 6
Independent Claim
25 words
The method recited in claims 1, 2 or 3 wherein the step of depositing the flowable material comprises the step of depositing a flowable oxide.
Claim 7
Dependent Claim
19 words
The method recited in claim 3 wherein the spin depositing step comprises the step of spin depositing hydrogensilsesquioxane glass.
Claim 8
Independent Claim
26 words
The method recited in claims 1, 2 or 3 wherein the step of depositing the flowable material comprises the step of depositing a flowable inorganic material.
Claim 9
Independent Claim
252 words
A method for planarizing a semiconductor structure having a first surface region of a substrate with a high aspect ratio topography and a second surface region of the substrate with a low aspect ratio topography, such method comprising the steps of: depositing a flowable material over the first and second surface regions of the substrate, such material being characterized in that after deposition the material has a substantially planar surface, a portion of such material filling gaps in the high aspect ratio topography of the first surface region forming a substantially planar surface over the high aspect ratio topography first surface region and a substantially planar surface over the low aspect ratio second surface region, the planar surface over the first surface region being at a different level over the substrate than the planar surface over the second surface region; and curing the flowable material; forming a doped layer over the cured flowable material, the doped layer being formed over the high aspect ratio and over the low aspect ratio first and second surface regions, upper surface portions of the doped layer over the low aspect ratio second surface region being higher than upper surface portions of the deposited flowable material over the high aspect ratio first surface regions; and removing upper surface portions of the doped layer over both the first and second surface portions to form the doped layer with a substantially planar surface, such planar surface of the doped layer extending above both the first and second surface regions.
Claim 10
Independent Claim
252 words
A method for planarizing a semiconductor structure having a first surface region of a substrate with a high aspect ratio topography and a second surface region of the substrate with a low aspect ratio topography, such method comprising the steps of: depositing a flowable material over the first and second surface regions of the substrate, such material being characterized in that after deposition the material has a substantially planar surface, a portion of such material filling gaps in the high aspect ratio topography of the first surface region forming a substantially planar surface over the high aspect ratio topography first surface region and a substantially planar surface over the low aspect ratio second surface region, the planar surface over the first surface region being at a different level over the substrate than the planar surface over the second surface region; and curing the flowable material; forming a doped layer over the cured flowable material, the doped layer being formed over the high aspect ratio and over the low aspect ratio first and second surface regions, upper surface portions of the doped layer over the low aspect ratio second surface region being higher than upper surface portions of the deposited flowable material over the high aspect ratio first surface regions; and removing upper surface portions of the doped layer over both the first and second surface portions to form the doped layer with a substantially planar surface, such planar surface of the doped layer extending above both the first and second surface regions.
Claim 11
Dependent Claim
24 words
The method recited in claim 8 wherein the step of forming the doped layer comprises the step of chemical vapor depositing phosphorus doped glass.
Claim 12
Dependent Claim
23 words
The method recited in claim 8 wherein the step of depositing the flowable material comprises the step of spin depositing such flowable material.
Claim 13
Dependent Claim
21 words
The method recited in claim 8 wherein the step of depositing the flowable material comprises the step of using gaseous deposition.
Claim 14
Independent Claim
25 words
The method recited in claims 8, 9 or 10 wherein the step of depositing the flowable material comprises the step of depositing a flowable oxide.
Claim 15
Dependent Claim
19 words
The method recited in claim 10 wherein the spin depositing step comprises the step of spin depositing hydrogensilsesquioxane glass.
Claim 16
Independent Claim
26 words
The method recited in claims 8, 9 or 10 wherein the step of depositing the flowable material comprises the step of depositing a flowable inorganic material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-04 | 2003-04-05 | 2003-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-04 | 2007-04-05 | 2007-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-04 | 2011-04-05 | 2011-10-05 | $7700.00 | Window Closed / Lapsed |