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US5960014A
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Thin film resistor for optoelectronic integrated circuits
Assignee: Nortel Networks UK Ltd
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Filing: 1997-11-24
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Granted: 1999-09-28
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Expires: 2017-11-24
Abstract
Abstract A thin film resistor for optoelectronic integrated circuits is described. A stable low resistance, thin film resistor comprising a bilayer of platinum on titanium is provided. Advantageously, the resistive layer is protected by a layer of dielectric, e.g. silicon dioxide or silicon nitride to reduce degradation from humidity an under high temperature operation at 300 DEG C. or more. The resistor may be formed on various substrates, including silicon dioxide, silicon nitride and semiconductor substrates. Applications for optoelectronic integrated circuits include integrated resistive heaters for wavelength fine tuning of a semiconductor laser array.
Inventors
- 👤 Guo Ping Li
- 👤 Agnes Margittai
- 👤 Trevor Jones
- 👤 Joannie Marks
- 👤 Frank R. Shepherd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:14
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/0607; H01S5/0612; H01C; H01C7/00; H01C7/006; H01S5/02; H01S5/026; H01S5/0261; H01S5/40; H01S5/4025; H01S5/4031
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
53 words
A laser diode array having a resistive heater for thermally fine tuning an output wavelength of the laser diode array, the resistive heater comprising a thin film resistor comprising a resistive portion and contact portions, the resistive portion comprising a metal bilayer of first layer of titanium and an overlying layer of platinum.
Claim 2
Dependent Claim
53 words
A laser diode array having a resistive heater for thermally fine tuning an output wavelength of the laser diode array, the resistive heater comprising a thin film resistor comprising a resistive portion and contact portions, the resistive portion comprising a metal bilayer of first layer of titanium and an overlying layer of platinum.
Claim 3
Dependent Claim
19 words
A laser diode array according to claim 1 wherein the thin film resistor comprises an overlying encapsulating dielectric layer.
Claim 4
Dependent Claim
15 words
A laser diode array according to claim 2 wherein the dielectric layer comprises silicon dioxide.
Claim 5
Dependent Claim
15 words
A laser diode array according to claim 2 wherein the dielectric layer comprises silicon nitride.
Claim 6
Dependent Claim
34 words
A laser diode array according to claim 2 wherein the titanium layer has a thickness from 50 Å to 250 Å, and the platinum layer has a thickness from 1000 Å to 5000 Å.
Claim 7
Dependent Claim
42 words
A laser diode array according to claim 1 wherein the first layer of titanium comprising the resistive portion of the thin film resistor has a first thickness and the second layer of platinum has a second thickness greater than the first thickness.
Claim 8
Dependent Claim
33 words
A laser diode array according to claim 1 wherein the metal bilayer consists of a titanium layer having a thickness of 250 Å and a platinum layer having a thickness of 2000 Å.
Claim 9
Dependent Claim
24 words
A laser diode array according to claim 1 wherein the contact portions comprise a layer of gold to provide a low resistivity Ti/Pt/Au trilayer.
References Cited (Backward Citations)
US5173909A
Cited
US5536085A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-27 | 2003-03-29 | 2003-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-27 | 2007-03-29 | 2007-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-27 | 2011-03-29 | 2011-09-28 | $7700.00 | Window Closed / Lapsed |