US5955781A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Embedded thermal conductors for semiconductor chips
Assignee: Apple Inc
•
Filing: 1998-01-13
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Granted: 1999-09-21
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Expires: 2018-01-13
Abstract
Abstract A semiconductor chip structure includes a substrate, at least one thermal conductor embedded within the semiconductor chip structure, the thermal conductor providing electrical insulation and a plurality of devices formed within the structure adjacent to the at least one thermal conductor such that during operation heat produced in the devices is transferred into and through the at least one thermal conductor to reduce an operating temperature of the devices. This structure is particularly useful in silicon-on insulator devices. A method of forming embedded thermal conductors in a semiconductor chip includes the steps of providing a substrate having an oxide layer formed thereon, etching trenches into the oxide layer, depositing diamond to fill the trenches to form thermal conductors contacting the substrate and forming devices and contacts adjacent to the thermal conductors for providing heat flow paths to reduce an operating temperature of the devices.
Inventors
- 👤 Rajiv Vasant Joshi
- 👤 William Robert Reohr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W40/228; H10W40/25; H10W40/254; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
72 words
A semiconductor chip structure comprising: a substrate; at least one thermal conductor embedded within the semiconductor chip structure, the thermal conductor providing electrical insulation between a plurality of devices; the plurality of devices formed within the structure contacting the at least one thermal conductor such that during operation heat produced in the devices is transferred into and through the at least one thermal conductor to reduce an operating temperature of the devices.
Claim 2
Dependent Claim
72 words
A semiconductor chip structure comprising: a substrate; at least one thermal conductor embedded within the semiconductor chip structure, the thermal conductor providing electrical insulation between a plurality of devices; the plurality of devices formed within the structure contacting the at least one thermal conductor such that during operation heat produced in the devices is transferred into and through the at least one thermal conductor to reduce an operating temperature of the devices.
Claim 3
Dependent Claim
20 words
The semiconductor chip structure as recited in claim 1 wherein the at least one thermal conductor is made from diamond.
Claim 4
Dependent Claim
25 words
The semiconductor chip structure as recited in claim 2 wherein the at least one thermal conductor is covered with a nitride layer to prevent oxidation.
Claim 5
Dependent Claim
37 words
The semiconductor chip structure as recited in claim 1 wherein the substrate further comprises: a backside surface; and a plurality of thermal conductors transversely embedded into the substrate through the backside surface for increasing heat flow therethrough.
Claim 6
Dependent Claim
35 words
The semiconductor chip structure as recited in claim 4 wherein the backside surface is etched back to expose a larger area of the plurality of thermal conductors to increase heat flow through the backside surface.
Claim 7
Dependent Claim
34 words
The semiconductor chip structure as recited in claim 4 further comprises a thermal grease disposed on the backside surface; and a cooling apparatus abutting the thermal grease for increasing heat flow from the substrate.
Claim 8
Dependent Claim
41 words
The semiconductor chip structure as recited in claim 1 further comprises: contacts for connecting to metal interconnects wherein the at least one thermal conductor contacts a contact to provide a heat flow path through the contacts and into the metal interconnects.
Claim 9
Dependent Claim
20 words
The semiconductor chip structure as recited in claim 7 wherein the metal interconnects include a metal having high thermal conductivity.
Claim 10
Dependent Claim
14 words
The semiconductor chip structure as recited in claim 8 wherein the metal includes copper.
Claim 11
Dependent Claim
14 words
The semiconductor chip structure as recited in claim 8 wherein the metal includes aluminum.
Claim 12
Dependent Claim
24 words
The semiconductor chip structure as recited in claim 1 wherein each thermal conductor is formed laterally adjacent to at least one of the devices.
Claim 13
Dependent Claim
21 words
The semiconductor chip structure as recited in claim 1 wherein the at least one thermal conductor is formed on the substrate.
Claim 14
Dependent Claim
58 words
The semiconductor chip structure as recited in claim 1 further comprises: an oxide layer formed on the substrate, the oxide layer having openings formed therethrough; each thermal conductor formed within the openings in the oxide layer such that each thermal conductor is adjacent to at least one of the plurality of devices and in contact with the substrate.
Claim 15
Dependent Claim
20 words
The semiconductor chip structure as recited in claim 13 wherein the at least one thermal conductor also contacts a contact.
Claim 16
Dependent Claim
96 words
A SOI semiconductor chip structure comprising: a substrate; at least one thermal conductor embedded within the SOI semiconductor chip structure, the at least one thermal conductor providing electrical insulation between a plurality of devices; the plurality of devices formed within the structure contacting the at least one thermal conductor wherein at least a portion of the at least one thermal conductor extends between the substrate and the devices such that during operation heat produced in the devices is transferred into and through the at least one thermal conductor to reduce an operating temperature of the devices.
Claim 17
Dependent Claim
96 words
A SOI semiconductor chip structure comprising: a substrate; at least one thermal conductor embedded within the SOI semiconductor chip structure, the at least one thermal conductor providing electrical insulation between a plurality of devices; the plurality of devices formed within the structure contacting the at least one thermal conductor wherein at least a portion of the at least one thermal conductor extends between the substrate and the devices such that during operation heat produced in the devices is transferred into and through the at least one thermal conductor to reduce an operating temperature of the devices.
Claim 18
Dependent Claim
21 words
The SOI semiconductor chip structure as recited in claim 15 wherein the at least one thermal conductor is made from diamond.
Claim 19
Dependent Claim
26 words
The SOI semiconductor chip structure as recited in claim 16 wherein the at least one thermal conductor is covered with a nitride layer to prevent oxidation.
Claim 20
Dependent Claim
42 words
The SOI semiconductor chip structure as recited in claim 15 further comprises: contacts for connecting to metal interconnects wherein the at least one thermal conductor contacts a contact to provide a heat flow path through the contacts and into the metal interconnects.
Claim 21
Dependent Claim
21 words
The SOI semiconductor chip structure as recited in claim 18 wherein the metal interconnects include a metal having high thermal conductivity.
Claim 22
Dependent Claim
15 words
The SOI semiconductor chip structure as recited in claim 19 wherein the metal includes copper.
Claim 23
Dependent Claim
15 words
The SOI semiconductor chip structure as recited in claim 19 wherein the metal includes aluminum.
Claim 24
Dependent Claim
28 words
The SOI semiconductor chip structure as recited in claim 15 wherein the at least one thermal conductor is formed laterally adjacent to at least one of the devices.
Claim 25
Dependent Claim
38 words
The SOI semiconductor chip structure as recited in claim 15 wherein the substrate further comprises: a backside surface; and a plurality of thermal conductors transversely embedded into the substrate through the backside surface for increasing heat flow therethrough.
Claim 26
Dependent Claim
36 words
The SOI semiconductor chip structure as recited in claim 23 wherein the backside surface is etched back to expose a larger area of the plurality of thermal conductors to increase heat flow through the backside surface.
Claim 27
Dependent Claim
35 words
The SOI semiconductor chip structure as recited in claim 23 further comprises a thermal grease disposed on the backside surface; and a cooling apparatus abutting the thermal grease for increasing heat flow from the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-20 | 2003-03-22 | 2003-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-20 | 2007-03-22 | 2007-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-20 | 2011-03-22 | 2011-09-21 | $7700.00 | Window Closed / Lapsed |