Patent US5955227A successfully refreshed from Google Patents.
US5955227A
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Pattern determination method
Assignee: Renesas Electronics Corp
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Filing: 1998-06-02
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Granted: 1999-09-21
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Expires: 2018-06-02
Abstract
Abstract A pattern determination method includes a step for setting an interconnection width and the like, a step for representing the mask pattern and aperture configuration in functions, steps for calculating amplitude distribution of exposure light, a step for calculating intensity distribution of exposure light at an image plane, steps for calculating maximum, minimum, and reference intensity of exposure light, a step for determining exposure margin and focus margin, a step for storing data of qualification/disqualification of optical image formation, and a step for providing a display of a table. A configuration including four openings is set for the aperture. Determination of whether an optical image of an interconnection pattern can be formed or not is facilitated by the table in setting the interconnection pattern of a semiconductor device.
Inventors
- 👤 Kouichirou Tsujita
- 👤 Junjiro Sakai
- 👤 Akihiro Nakae
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:52
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70605; G03F7/70616; G03F7/70625; G03F7/70058; G03F7/70191; G03F7/70216; G03F7/7025; G03F7/70308; G03F7/70491; G03F7/705; G03F7/7055
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
180 words
A pattern determination method comprising the steps of: setting an interconnection width and a distance between said interconnections; setting a pattern of a mask according to said width and said distance, and a configuration of an aperture for directing exposure light to said mask at a predetermined angle; calculating intensity distribution of exposure light at a wafer plane emitted from a light source plane and passing through said aperture and said mask; calculating maximum exposure light intensity or minimum exposure light intensity of said exposure light intensity distribution; setting reference exposure light intensity; calculating an amount of defocus with respect to said reference exposure light intensity; determining qualification/disqualification of forming an optical image of said mask pattern at said wafer plane by said reference exposure light intensity, said maximum exposure light intensity, said minimum exposure light intensity, and said amount of defocus; forming a pattern formation qualify/disqualify table with data of said image formation qualification/disqualification corresponding to said width and said distance; and determining interconnection width and interconnection distance in a semiconductor device according to said pattern formation qualify/disqualify table.
Claim 2
Dependent Claim
180 words
A pattern determination method comprising the steps of: setting an interconnection width and a distance between said interconnections; setting a pattern of a mask according to said width and said distance, and a configuration of an aperture for directing exposure light to said mask at a predetermined angle; calculating intensity distribution of exposure light at a wafer plane emitted from a light source plane and passing through said aperture and said mask; calculating maximum exposure light intensity or minimum exposure light intensity of said exposure light intensity distribution; setting reference exposure light intensity; calculating an amount of defocus with respect to said reference exposure light intensity; determining qualification/disqualification of forming an optical image of said mask pattern at said wafer plane by said reference exposure light intensity, said maximum exposure light intensity, said minimum exposure light intensity, and said amount of defocus; forming a pattern formation qualify/disqualify table with data of said image formation qualification/disqualification corresponding to said width and said distance; and determining interconnection width and interconnection distance in a semiconductor device according to said pattern formation qualify/disqualify table.
Claim 3
Dependent Claim
112 words
The pattern determination method according to claim 1, wherein said aperture in said step of setting a configuration of an aperture includes an opening formed in each of four regions divided by virtual first and second axes orthogonal to each other with a position corresponding to an optical axis of exposure light as a crossing point, said opening including at least a first opening edge and a second opening edge parallel to said first axis, and located closer to and remote from said first axis, respectively, and a third opening edge and a fourth opening edge parallel to said second axis, and located closer to and remote from said second axis, respectively.
Claim 4
Dependent Claim
214 words
A semiconductor pattern formation method comprising the steps of: setting an interconnection width and a distance between said interconnections; setting a pattern of a mask according to said width and said distance, and a configuration of an aperture for directing exposure light to said mask at a predetermined angle; calculating intensity distribution of exposure light at a wafer plane emitted from a light source plane and passing through said aperture and said mask; calculating maximum exposure light intensity or minimum exposure light intensity of said exposure light intensity distribution; setting reference exposure light intensity; calculating an amount of defocus with respect to said reference exposure light intensity; determining qualification/disqualification of forming an optical image of said mask pattern at said wafer plane by said reference exposure light intensity, said maximum exposure light intensity, said minimum exposure light intensity, and said amount of defocus; forming a pattern formation qualify/disqualify table with data of said image formation qualification/disqualification corresponding to said width and said distance; determining interconnection width and interconnection distance in a semiconductor device according to said pattern formation qualify/disqualify table; forming a mask having a pattern according to said determined interconnection width and interconnection distance; and patterning a predetermined conductive film formed on a semiconductor substrate by applying photolithography and processing using said mask.
Claim 5
Dependent Claim
214 words
A semiconductor pattern formation method comprising the steps of: setting an interconnection width and a distance between said interconnections; setting a pattern of a mask according to said width and said distance, and a configuration of an aperture for directing exposure light to said mask at a predetermined angle; calculating intensity distribution of exposure light at a wafer plane emitted from a light source plane and passing through said aperture and said mask; calculating maximum exposure light intensity or minimum exposure light intensity of said exposure light intensity distribution; setting reference exposure light intensity; calculating an amount of defocus with respect to said reference exposure light intensity; determining qualification/disqualification of forming an optical image of said mask pattern at said wafer plane by said reference exposure light intensity, said maximum exposure light intensity, said minimum exposure light intensity, and said amount of defocus; forming a pattern formation qualify/disqualify table with data of said image formation qualification/disqualification corresponding to said width and said distance; determining interconnection width and interconnection distance in a semiconductor device according to said pattern formation qualify/disqualify table; forming a mask having a pattern according to said determined interconnection width and interconnection distance; and patterning a predetermined conductive film formed on a semiconductor substrate by applying photolithography and processing using said mask.
References Cited (Backward Citations)
No citation records indexed.
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