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US5955211A
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Magnetoresistive film
Assignee: Hanger Solutions LLC
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Filing: 1997-07-09
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Granted: 1999-09-21
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Expires: 2017-07-09
Abstract
Abstract Disclosed is a magnetoresistive film which includes an antiferromagnetic layer, a first amorphous ferromagnetic layer, a crystalline ferromagnetic interlayer disposed between the antiferromagnetic layer and the first amorphous ferromagnetic layer, a nonmagnetic conductive layer provided on the first amorphous ferromagnetic layer and a ferromagnetic layer provided on the nonmagnetic conductive layer.
Inventors
- 👤 Atsushi Maeda
- 👤 Satoru Oikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:23
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/10; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; B; B82; B82Y; B82Y10/00; B82Y25/00; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; H01; H01F; H01F1/00; H01F1/01; H01F1/03; H01F1/12; H01F1/14; H01F1/147; H01F1/153; H01F10/00; H01F10/08; H01F10/32; H01F10/3204; H01F10/324; H01F10/3268; H10N50/80; H10N50/85; G11B2005/3996; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/11; Y10T428/1107; Y10T428/1121
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
81 words
A magnetoresistive film comprising: an antiferromagnetic layer; a first amorphous ferromagnetic layer; a crystalline ferromagnetic interlayer disposed between said antiferromagnetic layer and said first amorphous ferromagnetic layer; a non magnetic conductive layer provided on said first amorphous ferromagnetic layer; and a ferromagnetic layer provided on said nonmagnetic conductive layer; wherein said crystalline ferromagnetic interlayer is ferromagnetically coupled to said amorphous ferromagnetic layer, so that the ferromagnetically coupled crystalline ferromagnetic interlayer and amorphous ferromagnetic layer are magnetically coupled to said antiferromagnetic layer.
Claim 2
Dependent Claim
81 words
A magnetoresistive film comprising: an antiferromagnetic layer; a first amorphous ferromagnetic layer; a crystalline ferromagnetic interlayer disposed between said antiferromagnetic layer and said first amorphous ferromagnetic layer; a non magnetic conductive layer provided on said first amorphous ferromagnetic layer; and a ferromagnetic layer provided on said nonmagnetic conductive layer; wherein said crystalline ferromagnetic interlayer is ferromagnetically coupled to said amorphous ferromagnetic layer, so that the ferromagnetically coupled crystalline ferromagnetic interlayer and amorphous ferromagnetic layer are magnetically coupled to said antiferromagnetic layer.
Claim 3
Dependent Claim
31 words
The magnetoresistive film of claim 1, wherein said crystalline ferromagnetic interlayer is formed of at least one metallic material selected from the group consisting of Fe, Co, Ni and alloys thereof.
Claim 4
Dependent Claim
16 words
The magnetoresistive film of claim 2, wherein said crystalline ferromagnetic interlayer comprises NiFe, NiCo or CoFe.
Claim 5
Dependent Claim
16 words
The magnetoresistive film of claim 1, wherein said ferromagnetic layer is a second amorphous ferromagnetic layer.
Claim 6
Dependent Claim
21 words
The magnetoresistive film of claim 1, wherein said first amorphous ferromagnetic layer comprises an amorphous ferromagnetic material comprised principally of Co.
Claim 7
Dependent Claim
33 words
The magnetoresistive film of claim 5, wherein said first amorphous ferromagnetic layer is formed of at least one alloy selected from the group consisting of CoFeB, CoNb, CoZr, CoZrNb, CoTa, CoTaZr and CoNbTa.
Claim 8
Dependent Claim
34 words
The magnetoresistive film of claim 5, wherein said first amorphous ferromagnetic layer is formed of at least one alloy selected from the group consisting of CoB, CoFeZr, CoFeTa, CoFeNb, CoNiB, CoNiZr, CoNiTa and CoNiNb.
Claim 9
Dependent Claim
25 words
A magnetoresistive film having a multilayer structure in which the layered sequence of the magnetoresistive film of claim 1 is repeated two or more times.
References Cited (Backward Citations)
US5549978A
Cited
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