Low voltage, low current hot-hole injection erase and hot-electron programmable flash memory with enhanced endurance

Claim 3

The method of claim 1, wherein step (c) includes inducing a sub-threshold drain-source current in chosen ones of said memory cells.

Claim 4

The method of claim 1, wherein step (c) is carried out by coupling a source of positive voltage of less than about 7 V to drain regions of memory cells to be programmed, and by coupling a smaller positive voltage that may be zero volts to source regions of memory cells to be programmed, and by coupling a smaller positive voltage that may be zero volts to control gate regions of memory cells to be programmed.

Claim 5

The method of claim 1, wherein step (c) is carried out by coupling about 5 V to drain regions of memory cells to be programmed, and by coupling about 0 V to source regions and to control gate regions of memory cells to be programmed.

Claim 6

The method of claim 1, further including providing said IC with means for monitoring effectiveness of programming individual ones of said memory cells in said array.

Claim 7

The method of claim 5, further including providing means for switching, coupled to said means for monitoring effectiveness and coupled to said memory cells; wherein said means for switching interchanges electrical connections between source and drain regions of memory cells determined by said means for monitoring to exhibit deteriorated programming efficiency.

Claim 8

The method of claim 1, wherein step (c) includes programming at least some said memory cells to store more than two levels of data.

Claim 9

The method of claim 1, wherein step (c) includes programming at least some of said memory cells to store more than two levels of data by causing a plurality of different Vt levels, said plurality being selected from a group consisting of (i) all positive values of said Vt, and (iii) positive and negative values of said Vt.

Claim 10

The method of claim 1, wherein step (c) includes programming at least some of said memory cells to store more than two levels of data by coupling to control gates of said memory cells to be so programmed a source of potential that is varied in magnitude to create multiple values of said Vt.

Claim 11

The method of claim 1, wherein said array is a NAND-type array.

Claim 12

The method of claim 1, wherein: at step (b), exposure to said ultraviolet light turns-off chosen ones of said memory cells; and at step (c), injecting hot-holes turns-on chosen ones of said memory cells.

Claim 13

The method of claim 1, wherein said array is a NOR-type array.

Claim 14

The method of claim 1, wherein programming at step (c) is carried out with bit-size resolution.

Claim 15

The method of claim 1, wherein programming at step (c) is carried out with byte-size resolution.

Claim 16

The method of claim 1, wherein at least one group of said memory cells has said control gates coupled together to define addressable wordlines (WLs), have sources coupled together to define addressable sourcelines (SLs), and have drains coupled together to define bitlines (B1s); and wherein step (c) further includes: using said hot-hole injection to serially program chosen ones of said memory cells in a sequence that includes: (i) logically addressing a first WL coupled to chosen ones of said memory cells; (ii) providing BL latches that are logically reset and then loaded with input data to be programmably stored in said chosen ones of said memory cells; (iii) addressably coupling to selected ones of said WLs and deselected ones of said WLs a train of voltage pulses having different pulse amplitudes, and addressably coupling to selected ones of said BLs and deselected ones of said BLs a train of voltage pulses having different pulse amplitudes; and (iv) monitoring said Vt for said chosen ones of said memory cells to confirm that said Vt has been decreased in magnitude to at least a predetermined value; if step (iv) verifies sufficient decrease in magnitude of said Vt, repeating step (i) for an incremented address of said WL; and then repeating steps (ii), (iii) and (iv) for memory cells associated with a so-incremented WL address; if step (iv) does not verify sufficient decrease in magnitude of Vt, repeating step (iii) with a decreased magnitude of pulse train potential for selected said WLs, and then repeating step (iv) until said Vt has been sufficiently decreased; and repeating steps (i), (ii), (iii) and (iv) as needed until memory cells coupled to all desired said WLs have been programmed.

Claim 17

The method of claim 1, wherein Vt is controllably adjusted in magnitude by coupling a source of potential to said drain region and varying magnitude of said potential to ensure said hot-hole injection.

Claim 18

An integrated circuit (IC) including: a plurality of UV-erasable memory cells able to store at least two levels of data per memory cell and addressably arranged in an array, each of said memory cells having a cell threshold voltage Vt and comprising a metal oxide semiconductor (MOS) device having a control gate, a floating gate, and functionally symmetrical source and drain regions; and means, coupleable to a source of voltage not exceeding about 7V, for injecting hot-holes into a chosen one of said source and drain regions of addressable ones of said memory cells; wherein injection of said hot-holes decreases said Vt to program said cells.

Claim 19

An integrated circuit (IC) including: a plurality of UV-erasable memory cells able to store at least two levels of data per memory cell and addressably arranged in an array, each of said memory cells having a cell threshold voltage Vt and comprising a metal oxide semiconductor (MOS) device having a control gate, a floating gate, and functionally symmetrical source and drain regions; and means, coupleable to a source of voltage not exceeding about 7V, for injecting hot-holes into a chosen one of said source and drain regions of addressable ones of said memory cells; wherein injection of said hot-holes decreases said Vt to program said cells.

Claim 20

The IC of claim 17, wherein said means for injecting couples about 5 V to drain regions of memory cells to be programmed, and couples a smaller positive voltage that may be zero volts to source regions of memory cells to be programmed, and couples a smaller Dositive voltage that may be zero volts to control gate regions of memory cells to be programmed.

Claim 21

The IC of claim 17, wherein said IC further includes: means for monitoring effectiveness of programming individual ones of said memory cells in said array; and means for electrically interchanging electrical connections between source and drain regions of memory cells determined by said means for monitoring to exhibit deteriorated programming efficiency.

Claim 22

The IC of claim 17, wherein said array has a configuration selected from a group consisting of: (a) a NAND-type array; and (b) a NOR-type array.