US5950101A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor device involving forming two silicon oxide layers by CVD and forming HMDS between the silicon oxide layers
Assignee: Panasonic Holdings Corp
•
Filing: 1997-07-07
•
Granted: 1999-09-07
•
Expires: 2017-07-07
Abstract
Abstract A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
Inventors
- 👤 Kousaka Yano
- 👤 Tatsuo Sugiyama
- 👤 Satoshi Ueda
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 09:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/095; H10W20/40; H10W20/45; H10W20/48; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10W20/074; H10W20/075; H10W20/077; H10W20/096
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
145 words
A semiconductor device fabrication method comprising the steps of: (a) locally forming a first metallization layer on a surface of a semiconductor substrate thereby leaving portions of said surface of said semiconductor substrate exposed; (b) forming a first silicon oxide layer by means of a chemical vapor deposition process in such a manner that said first silicon oxide layer covers said exposed portions of said semiconductor substrate's surface and said first metallization layer; (c) forming a molecular layer on said first silicon oxide layer by supplying hexamethyldisilazane onto said first silicon oxide layer, said molecular layer being made up of molecules containing hydrophobic groups; (d) depositing a second silicon oxide layer on said molecular layer by means of a chemical vapor deposition process utilizing the chemical reaction of ozone with organo-silicon; and (e) locally forming a second metallization layer on said second silicon oxide layer.
Claim 2
Dependent Claim
145 words
A semiconductor device fabrication method comprising the steps of: (a) locally forming a first metallization layer on a surface of a semiconductor substrate thereby leaving portions of said surface of said semiconductor substrate exposed; (b) forming a first silicon oxide layer by means of a chemical vapor deposition process in such a manner that said first silicon oxide layer covers said exposed portions of said semiconductor substrate's surface and said first metallization layer; (c) forming a molecular layer on said first silicon oxide layer by supplying hexamethyldisilazane onto said first silicon oxide layer, said molecular layer being made up of molecules containing hydrophobic groups; (d) depositing a second silicon oxide layer on said molecular layer by means of a chemical vapor deposition process utilizing the chemical reaction of ozone with organo-silicon; and (e) locally forming a second metallization layer on said second silicon oxide layer.
Claim 3
Dependent Claim
18 words
The semiconductor device fabrication method of claim 1, wherein said molecular layer is composed of a surface-active agent.
Claim 4
Dependent Claim
16 words
The semiconductor device fabrication method of claim 2, wherein said surface-active agent contains silicon or germanium.
Claim 5
Dependent Claim
14 words
The semiconductor device fabrication method of claim 1, wherein said organo-silicon is TEOS (tetra-ethyl-orthosilicate).
Claim 6
Dependent Claim
166 words
A semiconductor device fabrication method comprising the steps of: (a) locally forming a first metallization layer on a surface of a semiconductor substrate thereby leaving portions of said surface of said semiconductor substrate exposed; (b) forming a first silicon oxide layer by means of a chemical vapor deposition process in such a manner that said first silicon oxide layer covers said exposed portions of said semiconductor substrate's surface and said first metallization layer; (c) forming a molecular layer on said first silicon oxide layer by means of an interface reaction process in which hexamethyldisilazane is supplied onto said first silicon oxide layer by making use of a solution application or by a vapor spray, said molecular layer being made up of molecules containing hydrophobic groups; (d) depositing a second silicon oxide layer on said molecular layer by means of chemical vapor deposition (CVD) process utilizing the chemical reaction of ozone with organo-silicon; and (e) locally forming a second metallization layer on said second silicon oxide layer.
Claim 7
Dependent Claim
166 words
A semiconductor device fabrication method comprising the steps of: (a) locally forming a first metallization layer on a surface of a semiconductor substrate thereby leaving portions of said surface of said semiconductor substrate exposed; (b) forming a first silicon oxide layer by means of a chemical vapor deposition process in such a manner that said first silicon oxide layer covers said exposed portions of said semiconductor substrate's surface and said first metallization layer; (c) forming a molecular layer on said first silicon oxide layer by means of an interface reaction process in which hexamethyldisilazane is supplied onto said first silicon oxide layer by making use of a solution application or by a vapor spray, said molecular layer being made up of molecules containing hydrophobic groups; (d) depositing a second silicon oxide layer on said molecular layer by means of chemical vapor deposition (CVD) process utilizing the chemical reaction of ozone with organo-silicon; and (e) locally forming a second metallization layer on said second silicon oxide layer.
Claim 8
Dependent Claim
14 words
The semiconductor device fabrication method of claim 5, wherein said organo-silicon is TEOS (tetra-ethyl-orthosilicate).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-06 | 2003-03-08 | 2003-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-06 | 2007-03-08 | 2007-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-06 | 2011-03-08 | 2011-09-07 | $7700.00 | Window Closed / Lapsed |