Semiconductor device having a gate electrode with only two crystal grains

Claim 2

A semiconductor device comprising: a semiconductor substrate; and a plurality of semiconductor elements provided on the semiconductor substrate, each of the semiconductor elements including: a gate dielectric film formed on the semiconductor substrate; a gate electrode formed on the semiconductor substrate with the gate dielectric film interposed therebetween, and having a pair of side surfaces; and source/drain regions formed in a surface of the semiconductor substrate along the pair of the side surfaces, wherein the gate electrode contains only two crystal grains, and the number of the crystal grains is substantially equal to the number of crystal grains contained in any other gate electrode of all the plurality of semiconductor elements.

Claim 3

The semiconductor device according to claim 1, further comprising a plurality of element isolating regions for isolating adjacent ones of the plurality of semiconductor elements.

Claim 4

The semiconductor device according to claim 2, wherein there is a step between a surface of each of the element isolating regions and a surface of the semiconductor substrate which is adjacent to each of the element isolating regions and on which the gate dielectric film is formed.

Claim 5

The semiconductor device according to claim 2, wherein the number of the crystal grains is two, and a grain boundary of the two crystal grains is located at a substantially center of a length of that portion of the semiconductor substrate which is situated between corresponding pair of the element isolating regions.

Claim 6

The semiconductor device according to claim 2, wherein a width of the gate electrode is set to be a predetermined width and a center of said gate being centered between corresponding pair of adjacent ones of the plurality of element isolation regions.

Claim 7

The semiconductor device according to claim 1, wherein the crystal grains of all the plurality of semiconductor elements have substantially the same shape and volume.

Claim 8

The semiconductor device according to claim 1, wherein the crystal grains of all the plurality of semiconductor elements have substantially the same orientation.

Claim 9

The semiconductor device according to claim 1, wherein each of the crystal grains of all the plurality of semiconductor elements has a plane substantially equal to a crystal plane of the semiconductor substrate.

Claim 10

A semiconductor device comprising: a semiconductor substrate; and a plurality of semiconductor elements provided on the semiconductor substrate, each of the semiconductor elements including: a gate dielectric film formed on the semiconductor substrate; a floating gate electrode formed on the semiconductor substrate with the gate dielectric film interposed therebetween; an interelectrode dielectric film formed on the floating gate electrode; a control gate electrode formed on the interelectrode dielectric film; and source/drain regions formed in a surface of the semiconductor substrate along the both sides of the floating gate electrode, wherein at least one of the floating gate electrode and the control gate electrode contains two crystal grains, and the number of the crystal grains contained in the at least one of the floating gate electrode and the control gate electrode is substantially equal to the number of crystal grains contained in any other corresponding one of the floating gate electrode and the control gate electrode of all the plurality of semiconductor elements.

Claim 11

A semiconductor device comprising: a semiconductor substrate; and a plurality of semiconductor elements provided on the semiconductor substrate, each of the semiconductor elements including: a gate dielectric film formed on the semiconductor substrate; a floating gate electrode formed on the semiconductor substrate with the gate dielectric film interposed therebetween; an interelectrode dielectric film formed on the floating gate electrode; a control gate electrode formed on the interelectrode dielectric film; and source/drain regions formed in a surface of the semiconductor substrate along the both sides of the floating gate electrode, wherein at least one of the floating gate electrode and the control gate electrode contains two crystal grains, and the number of the crystal grains contained in the at least one of the floating gate electrode and the control gate electrode is substantially equal to the number of crystal grains contained in any other corresponding one of the floating gate electrode and the control gate electrode of all the plurality of semiconductor elements.

Claim 12

The semiconductor device according to claim 9, further comprising a plurality of element isolating regions for isolating adjacent ones of the plurality of semiconductor elements.

Claim 13

The semiconductor device according to claim 10, wherein the number of the crystal grains is two, and the grain boundary of the two crystal grains is located at a substantially center of a length of that portion of the semiconductor substrate which is situated between corresponding pair of the plurality of element isolating regions.

Claim 14

The semiconductor device according to claim 9, wherein the crystal grains of all the plurality of semiconductor elements have substantially the same shape and volume.

Claim 15

The semiconductor device according to claim 9, wherein the crystal grains of all the plurality of semiconductor elements have substantially the same orientation.

Claim 16

The semiconductor device according to claim 9, wherein each of the crystal grains of all the plurality of semiconductor elements has a plane substantially equal to a crystal plane of the semiconductor substrate.