US5945708A
Expired / Lapsed
US
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Field-effect-controllable, vertical semiconductor component and method for producing the same
Assignee: Infineon Technologies AG
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Filing: 1997-09-19
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Granted: 1999-08-31
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Expires: 2017-09-19
Abstract
Abstract A field-effect-controllable, vertical semiconductor component, and a method for producing the semiconductor component include a semiconductor body having at least one drain zone of a first conduction type, at least one source zone of the first conduction type, at least one gate electrode insulated from the entire semiconductor body by a gate oxide, and a bulk region of the first conduction type. A source terminal is located on the rear side of the wafer, and a drain terminal and a gate terminal are located on the front side of the wafer.
Inventors
- 👤 Jenoe Tihanyi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:34
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D30/00; H10D30/60; H10D30/601; H10D30/608; H10D30/64; H10D30/66; H10D30/664; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/254; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
139 words
A field-effect-controllable, vertical semiconductor component, comprising: a semiconductor body having: front and rear wafer sides; at least one drain zone of a first conduction type; at least one source zone of the first conduction type disposed adjacent said front wafer side; at least one gate electrode; a gate oxide insulating said at least one gate electrode from said entire semiconductor body; a bulk region of the first conduction type disposed adjacent said rear wafer side, said bulk region having a very high dopant concentration; and a short circuit between said source zone and said bulk region, said short circuit formed by at least one vertical trench filled with conductive material; a source terminal disposed on said rear wafer side and electrically connected to said bulk region; and drain terminal and a gate terminal disposed on said front wafer side.
Claim 2
Dependent Claim
139 words
A field-effect-controllable, vertical semiconductor component, comprising: a semiconductor body having: front and rear wafer sides; at least one drain zone of a first conduction type; at least one source zone of the first conduction type disposed adjacent said front wafer side; at least one gate electrode; a gate oxide insulating said at least one gate electrode from said entire semiconductor body; a bulk region of the first conduction type disposed adjacent said rear wafer side, said bulk region having a very high dopant concentration; and a short circuit between said source zone and said bulk region, said short circuit formed by at least one vertical trench filled with conductive material; a source terminal disposed on said rear wafer side and electrically connected to said bulk region; and drain terminal and a gate terminal disposed on said front wafer side.
Claim 3
Dependent Claim
18 words
The field-effect-controllable, vertical semiconductor component according to claim 1, including a cooling body secured to said source terminal.
Claim 4
Dependent Claim
17 words
The field-effect-controllable, vertical semiconductor component according to claim 2, wherein said cooling body is a copper block.
Claim 5
Dependent Claim
31 words
The field-effect-controllable, vertical semiconductor component according to claim 1, wherein said conductive material of said trenches contains a substance selected from the group consisting of titanium nitride, doped polysilicon and metal.
Claim 6
Dependent Claim
23 words
The field-effect-controllable, vertical semiconductor component according to claim 1, wherein said bulk region has a dopant concentration of >10 18 cm -3 .
Claim 7
Dependent Claim
31 words
The field-effect-controllable, vertical semiconductor component according to claim 1, including intercell zones spacing said drain zones and said source zones apart and each containing one gate electrode and said gate oxide.
Claim 8
Dependent Claim
33 words
The field-effect-controllable, vertical semiconductor component according to claim 6, including channel zones of one of the conduction types, each of said channel zones introduced directly beneath a respective one of said intercell zones.
Claim 9
Dependent Claim
18 words
The field-effect-controllable, vertical semiconductor component according to claim 7, wherein said channel zones are introduced by ion implantation.
Claim 10
Dependent Claim
22 words
The field-effect-controllable, vertical semiconductor component according to claim 1, including contact regions in said drain zones having a very high dopant concentration.
Claim 11
Dependent Claim
22 words
The field-effect-controllable, vertical semiconductor component according to claim 9, wherein said contact regions are introduced into said semiconductor body by ion implantation.
Claim 12
Dependent Claim
23 words
The field-effect-controllable, vertical semiconductor component according to claim 1, wherein said at least one gate electrode is formed of highly doped polysilicon material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-08-30 | 2003-03-01 | 2003-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-30 | 2007-03-01 | 2007-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-30 | 2011-03-01 | 2011-08-31 | $7700.00 | Window Closed / Lapsed |