MOS transistor with impurity-implanted region

Claim 2

A MOS transistor comprising: a semiconductor substrate of a first conductivity type having a major surface; a source and a drain of a second conductivity type formed on said major surface such that a channel region is formed between the source and the drain; a gate arranged over the channel region; an insulating film disposed between the gate and the channel region; and an impurity-implanted region of the first conductivity type located at a substrate position which is deeper than the channel region and is shifted toward a source side from a region corresponding to the channel region, the impurity-implanted region overlapping the source in a thickness direction of the semiconductor substrate, the impurity-implanted region extending from a location corresponding to and spaced from the source to a center portion of the channel region or to a neighborhood of the center portion of the channel region; wherein both the source and the drain have LDD structures, and the source has a concentration higher than that of the drain.

Claim 3

A transistor according to claim 1, wherein the impurity-implanted region has an impurity concentration higher than that of another substrate portion.

Claim 4

A method of manufacturing the MOS transistor of claim 1, comprising the steps of: forming an insulating film on a semiconductor substrate of a first conductivity type having a major surface; implanting impurity ions of the first conductivity type at a position deeper than said major surface of said semiconductor substrate to form an impurity-implanted region; forming a gate over said major surface of said semiconductor substrate via said insulating film; and forming a source and a drain of a second conductivity type on said major surface of said semiconductor substrate such that a channel region is formed between the source and the drain; wherein the impurity-implanted region is located at a substrate portion which is deeper than the channel region and is shifted toward a source side from a region corresponding to the channel region, wherein the impurity-implanted region overlaps the source in a thickness direction of said semiconductor substrate, and wherein the impurity-implanted region extends from a location corresponding to and spaced from the source to a center portion of the channel region or to a neighborhood of the center portion of the channel region.

Claim 5

A method according to claim 3, wherein the step of implanting said impurity ions is performed before the step of forming said gate.

Claim 6

The MOS transistor according to claim 1, wherein said impurity-implanted region is disposed proximate to the source.

Claim 7

The MOS transistor according to claim 1, wherein an end portion of said impurity-implanted region, which is on a side of the source, is positioned below the source and separated from the source by a distance.

Claim 8

A MOS transistor comprising: a semiconductor substrate of a first conductivity type having a major surface; a source and a drain of a second conductivity type formed on said major surface such that a channel region is formed between said source and drain; a gate arranged over the channel region; an insulating film disposed between the gate and the channel region; an impurity-implanted region of the first conductivity type located at a substrate portion which is deeper than the channel region and which is shifted toward a source side from a region corresponding to the channel region, an end portion of the impurity-implanted region which faces the drain, being separated from the drain so as to avoid increasing a junction capacitance between the drain and the impurity-implanted region, and each of said source and said drain having a LDD structure, and said source having an impurity concentration higher than that of said drain.

Claim 9

A MOS transistor comprising: a semiconductor substrate of a first conductivity type having a major surface; a source and a drain of a second conductivity type formed on said major surface such that a channel region is formed between said source and drain; a gate arranged over the channel region; an insulating film disposed between the gate and the channel region; an impurity-implanted region of the first conductivity type located at a substrate portion which is deeper than the channel region and which is shifted toward a source side from a region corresponding to the channel region, an end portion of the impurity-implanted region which faces the drain, being separated from the drain so as to avoid increasing a junction capacitance between the drain and the impurity-implanted region, and each of said source and said drain having a LDD structure, and said source having an impurity concentration higher than that of said drain.

Claim 10

The MOS transistor according to claim 7, wherein the impurity-implanted region has an impurity concentration higher than that of another substrate portion.

Claim 11

The MOS transistor according to claim 7, wherein said impurity-implanted region is disposed proximate to the source.

Claim 12

The MOS transistor according to claim 7, wherein an end portion of said impurity-implanted region, which is on a side of the source, is located below the source so as to be separated from the source by a distance.

Claim 13

The MOS transistor according to claim 7, wherein a portion of said impurity-implanted region, which is nearest the drain, is located at a level of the MOS transistor that is at least equal to that of a bottom of the source.

Claim 14

The method of manufacture according to claim 3, wherein said impurity-implanted region is proximate the source.

Claim 15

The method of manufacture according to claim 3, wherein an end portion of said impurity-implanted region, which is on a side of the source, is located below the source and separated from the source by a distance.

Claim 16

A method of manufacturing the MOS transistor of claim 7, comprising the steps of: forming an insulating film on a semiconductor substrate of a first conductivity type having a major surface; implanting impurity ions of the first conductivity type at a position deeper than said major surface of said substrate to form an impurity-implanted region; forming a gate over said major surface of said substrate via said insulating film; and forming a source and drain of a second conductivity type on said major surface of said substrate such that a channel region is formed between said source and drain, wherein the impurity-implanted region of the first conductivity type is located at a substrate portion which is deeper than the channel region and which is shifted toward a source side from a region corresponding to the channel region, and wherein an end portion of the impurity-implanted region which is faces the drain, is separated from the drain so as to avoid increasing a junction capacitance between the drain and the impurity-implanted region, and each of said source and said drain having a LDD structure, and said source having an impurity concentration higher than that of said drain.

Claim 17

The method of manufacture according to claim 14, wherein the step of implanting said impurity ions occurs prior to the step of forming said gate.

Claim 18

The method of manufacture according to claim 14, wherein said impurity-implanted region is disposed proximate to the source.

Claim 19

The method of manufacture according to claim 14, wherein an end portion of said impurity-implanted region, which is on a side of the source, is located below the source and separated from the source by a distance.