US5933713A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming overmolded chip scale package and resulting product
Assignee: Micron Technology Inc
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Filing: 1998-04-06
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Granted: 1999-08-03
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Expires: 2018-04-06
Abstract
Abstract A method for forming a semiconductor device includes forming a conductive bump on one or more of pads of a semiconductor substrate. A top or uppermost portion of each conductive bump is then planarized. The exposed portions of a main surface of the semiconductor wafer are filled with a layer of encapsulation material. The conductive bumps are reformed to their preplanarized shape and the semiconductor wafer is then diced to form singulated semiconductor dice. A preferred method of the invention also includes placing each singulated die in a mold to complete a second encapsulation step wherein a layer of encapsulation material is formed on the back surface or, alternatively, on the back and side surfaces of the semiconductor die in order to encapsulate the back, or the back and sides, of the semiconductor die. The second encapsulation step can be accomplished either before or after the conductive bumps are reformed to their preplanarized shape, the back surface of the semiconductor wafer is layered with the encapsulating material, or the semiconductor wafer is diced.
Inventors
- 👤 Warren M. Farnworth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:56
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/411; H10W70/415; H10D; H10D62/00; H10D62/10; H10D62/117; H10W72/00; H10W72/01; H10W72/012; H10W72/0198; H10W72/20; H10W74/00; H10W74/01; H10W74/012; H10W74/016; H10W74/10; H10W74/111; H10W74/129; H10W74/15; H10W70/01; H10W70/05; H10W72/013; H10W72/01331; H10W72/071; H10W72/072; H10W72/07251; H10W72/073; H10W72/241; H10W72/242; H10W72/251; H10W72/252; H10W72/29; H10W72/30; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/851; H10W72/853; H10W72/856; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/944; H10W72/9445; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
79 words
A method for forming a semiconductor device, comprising: providing a semiconductor wafer having an active surface, said active surface having bond pads thereon; forming a conductive bump over at least one of said bond pads, said conductive bump having a top portion; planarizing said top portion of said conductive bump; forming a layer of encapsulation material to partially cover said active surface of said semiconductor wafer; and reforming said conductive bump to a preplanarized shape extending above said layer.
Claim 2
Independent Claim
79 words
A method for forming a semiconductor device, comprising: providing a semiconductor wafer having an active surface, said active surface having bond pads thereon; forming a conductive bump over at least one of said bond pads, said conductive bump having a top portion; planarizing said top portion of said conductive bump; forming a layer of encapsulation material to partially cover said active surface of said semiconductor wafer; and reforming said conductive bump to a preplanarized shape extending above said layer.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein forming said conductive bump comprises stenciling solder paste on said pads and reflowing said paste to form round ball bumps.
Claim 4
Dependent Claim
35 words
The method of claim 1, wherein planarizing said top portion comprises placing said semiconductor wafer in a mold and compressing said top portion of said conductive bump transverse to said active surface with a platen.
Claim 5
Dependent Claim
28 words
The method of claim 1, wherein forming a layer of encapsulation material comprises at least partially overcoating said active surface of said semiconductor wafer with a resin material.
Claim 6
Dependent Claim
28 words
The method of claim 1, wherein forming a layer of encapsulation material comprises at least partially overcoating said main surface of said semiconductor wafer with a glass material.
Claim 7
Dependent Claim
23 words
The method of claim 3, wherein partially overcoating said main surface of said semiconductor wafer comprises injecting said encapsulation material into said mold.
Claim 8
Dependent Claim
20 words
The method of claim 1, wherein reforming said conductive bump comprises reflowing said conductive bump to a substantially spherical shape.
Claim 9
Dependent Claim
28 words
The method of claim 3, wherein reforming said conductive bump comprises removing said semiconductor wafer from said mold and reflowing said conductive bump to a substantially spherical shape.
Claim 10
Dependent Claim
18 words
The method of claim 1, wherein forming said conductive bump comprises depositing a conductive elastomer over said pads.
Claim 11
Dependent Claim
30 words
The method of claim 9, wherein planarizing said top portion comprises placing said semiconductor wafer in a mold and compressing said top portion of said conductive elastomer with a platen.
Claim 12
Dependent Claim
25 words
The method of claim 10, wherein reforming said conductive bump comprises removing said compression to permit said conductive elastomer to return to a precompressed shape.
Claim 13
Dependent Claim
16 words
The method of claim 1, further comprising dicing said semiconductor wafer to singulate semiconductor die therefrom.
Claim 14
Dependent Claim
39 words
The method of claim 12, wherein said singulated semiconductor die has a back and sides and further comprising forming a layer of encapsulation material on said semiconductor die to cover said back and said sides of said semiconductor die.
Claim 15
Dependent Claim
36 words
The method of claim 13, wherein forming a layer of encapsulation material on said back and sides of the semiconductor die comprises overcoating said back and said sides of the semiconductor die with a glass material.
Claim 16
Dependent Claim
36 words
The method of claim 13, wherein forming a layer of encapsulation material on said back and sides of the semiconductor die comprises overcoating said back and said sides of the semiconductor die with a plastic material.
Claim 17
Dependent Claim
45 words
The method of claim 13, wherein forming a layer of encapsulation material on said semiconductor die to fill said back and said sides of said semiconductor die comprises placing said semiconductor die into a second mold and injecting said encapsulation material into said second mold.
Claim 18
Dependent Claim
35 words
The method of claim 1, wherein said semiconductor wafer has a back surface and further comprising forming a layer of encapsulation material on said back surface to cover said back surface of said semiconductor wafer.
Claim 19
Dependent Claim
27 words
The method of claim 17, wherein said layer of encapsulation material is formed on said back surface prior to reforming said conductive bump to a preplanarized shape.
Claim 20
Dependent Claim
26 words
The method of claim 17, wherein said layer of encapsulation material is formed on said back surface after reforming said conductive bond to a preplanarized shape.
Claim 21
Dependent Claim
33 words
The method of claim 17, wherein forming a layer of encapsulation material on said back surface of said semiconductor wafer comprises overcoating said back surface of said semiconductor wafer with a glass material.
Claim 22
Dependent Claim
33 words
The method of claim 17, wherein forming a layer of encapsulation material on said back surface of said semiconductor wafer comprises overcoating said back surface of said semiconductor wafer with a plastic material.
Claim 23
Dependent Claim
38 words
The method of claim 17, wherein forming a layer of encapsulation material on said back surface of said semiconductor wafer comprises placing said semiconductor wafer into a second mold and injecting said encapsulation material into said second mold.
Claim 24
Dependent Claim
21 words
The method of claim 1, wherein said semiconductor wafer is diced prior to reforming said conductive bump to a preplanarized shape.
Claim 25
Independent Claim
103 words
A method for forming a semiconductor device, comprising: forming a semiconductor die having a front surface, a back surface, and sides, said front surface of said semiconductor die having active circuitry with bond pads thereover; forming a conductive bump over at least one of said pads, said conductive bump having a top portion; planarizing said top portion of said conductive bump; forming a layer of encapsulation material on said semiconductor die to cover said back and said sides and to at least partially cover said front of said semiconductor die; and reforming said conductive bump to a preplanarized shape extending above said layer.
Claim 26
Independent Claim
103 words
A method for forming a semiconductor device, comprising: forming a semiconductor die having a front surface, a back surface, and sides, said front surface of said semiconductor die having active circuitry with bond pads thereover; forming a conductive bump over at least one of said pads, said conductive bump having a top portion; planarizing said top portion of said conductive bump; forming a layer of encapsulation material on said semiconductor die to cover said back and said sides and to at least partially cover said front of said semiconductor die; and reforming said conductive bump to a preplanarized shape extending above said layer.
Claim 27
Dependent Claim
26 words
The method of claim 24, wherein forming said conductive bump comprises stenciling solder paste on said pads and reflowing said paste to form round ball bumps.
Claim 28
Dependent Claim
30 words
The method of claim 24, wherein planarizing said top portion comprises placing said semiconductor wafer in a mold and compressing said top portion of said conductive bond with a platen.
Claim 29
Dependent Claim
31 words
The method of claim 24, wherein forming a layer of encapsulation material comprises overcoating said front surface, said back surface, and said sides of said semiconductor die with a plastic material.
Claim 30
Dependent Claim
31 words
The method of claim 24, wherein forming a layer of encapsulation material comprises overcoating said front surface, said back surface, and said sides of said semiconductor die with a glass material.
Claim 31
Dependent Claim
24 words
The method of claim 26, wherein forming a layer of encapsulation material of said semiconductor wafer comprises injecting said encapsulation material into said mold.
Claim 32
Dependent Claim
20 words
The method of claim 24, wherein reforming said conductive bond comprises reflowing said conductive bump to a substantially spherical shape.
Claim 33
Dependent Claim
28 words
The method of claim 24, wherein reforming said conductive bump comprises removing said semiconductor wafer from said mold and reflowing said conductive bump to a substantially spherical shape.
Claim 34
Dependent Claim
18 words
The method of claim 24, wherein forming said conductive bump comprises depositing a conductive elastomer on said pads.
Claim 35
Dependent Claim
31 words
The method of claim 32, wherein planarizing said top portion comprises placing said semiconductor wafer in a mold and compressing said top portion of said conductive elastomer with a mold clamp.
Claim 36
Dependent Claim
29 words
The method of claim 33, wherein reforming said conductive bump comprise removing said semiconductor wafer from said mold to permit said conductive elastomer to return to a precompressed shape.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-02 | 2003-02-01 | 2003-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-02 | 2007-02-01 | 2007-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-02 | 2011-02-01 | 2011-08-03 | $7700.00 | Window Closed / Lapsed |