Patent US5932893A successfully refreshed from Google Patents.
US5932893A
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Semiconductor device having doped polycrystalline layer
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1998-02-03
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Granted: 1999-08-03
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Expires: 2018-02-03
Abstract
Abstract An insulated gate field effect transistor comprises a silicon channel region. The silicon is crystallized by heat annealing while a suitable metal element such as nickel helps the crystallization. The crystallization proceeds in the silicon film laterally from the portion where the nickel is directly introduced. The TFT is arranged in such a manner that the source-drain direction of the TFT is aligned with the direction of the crystal growth or intersects with the crystal growth direction at a desired direction.
Inventors
- 👤 Akiharu Miyanaga
- 👤 Hisashi Ohtani
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/60; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
62 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a crystal growth direction of said crystalline semiconductor film is approximately parallel with said insulating surface.
Claim 2
Dependent Claim
62 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a crystal growth direction of said crystalline semiconductor film is approximately parallel with said insulating surface.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1 wherein said Group IV element is selected from the group consisting of C, Ge, Sn and Pb.
Claim 4
Dependent Claim
14 words
A semiconductor device according to claim 1 wherein said crystallization promoting material is nickel.
Claim 5
Dependent Claim
18 words
A semiconductor device according to claim 1 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 6
Dependent Claim
31 words
A semiconductor device according to claim 1 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
Claim 7
Dependent Claim
80 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a crystal growth direction of said crystalline semiconductor film is approximately parallel with said insulating surface, and wherein a concentration of said Group IV element is 5×10 14 to 5×10 16 cm -2 .
Claim 8
Dependent Claim
80 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a crystal growth direction of said crystalline semiconductor film is approximately parallel with said insulating surface, and wherein a concentration of said Group IV element is 5×10 14 to 5×10 16 cm -2 .
Claim 9
Dependent Claim
24 words
A semiconductor device according to claim 6 wherein said Group IV element is selected from the group consisting of C, Ge, Sn, and Pb.
Claim 10
Dependent Claim
14 words
A semiconductor device according to claim 6 wherein said crystallization promoting material is nickel.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 6 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 12
Dependent Claim
31 words
A semiconductor device according to claim 6 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
Claim 13
Dependent Claim
59 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with germanium in addition to a crystallization promoting material, wherein a crystal growth direction of said crystalline semiconductor film is approximately parallel with said insulating surface.
Claim 14
Dependent Claim
59 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with germanium in addition to a crystallization promoting material, wherein a crystal growth direction of said crystalline semiconductor film is approximately parallel with said insulating surface.
Claim 15
Dependent Claim
14 words
A semiconductor device according to claim 11 wherein said crystallization promoting material is nickel.
Claim 16
Dependent Claim
18 words
A semiconductor device according to claim 11 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 17
Dependent Claim
31 words
A semiconductor device according to claim 11 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
Claim 18
Dependent Claim
60 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a concentration of said crystallization promoting material is 2×10 19 cm -3 or less.
Claim 19
Dependent Claim
60 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a concentration of said crystallization promoting material is 2×10 19 cm -3 or less.
Claim 20
Dependent Claim
24 words
A semiconductor device according to claim 15 wherein said Group IV element is selected from the group consisting of C, Ge, Sn and Pb.
Claim 21
Dependent Claim
14 words
A semiconductor device according to claim 15 wherein said crystallization promoting material is nickel.
Claim 22
Dependent Claim
18 words
A semiconductor device according to claim 15 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 23
Dependent Claim
31 words
A semiconductor device according to claim 15 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
Claim 24
Dependent Claim
21 words
A semiconductor device according to claim 15 wherein the concentration of said crystallization promoting material is a value measured by SIMS.
Claim 25
Dependent Claim
78 words
A semiconductor device comprising: a substrate having an insulated surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein the concentration of said crystallization promoting material is 2×10 19 cm -3 or less, and wherein a concentration of said Group IV element is 5×10 14 to 5×10 16 cm -2 .
Claim 26
Dependent Claim
78 words
A semiconductor device comprising: a substrate having an insulated surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein the concentration of said crystallization promoting material is 2×10 19 cm -3 or less, and wherein a concentration of said Group IV element is 5×10 14 to 5×10 16 cm -2 .
Claim 27
Dependent Claim
24 words
A semiconductor device according to claim 21 wherein said Group IV element is selected from the group consisting of C, Ge, Sn and Pb.
Claim 28
Dependent Claim
14 words
A semiconductor device according to claim 21 wherein said crystallization promoting material is nickel.
Claim 29
Dependent Claim
18 words
A semiconductor device according to claim 21 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 30
Dependent Claim
31 words
A semiconductor device according to claim 21 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
Claim 31
Dependent Claim
21 words
A semiconductor device according to claim 21 wherein the concentration of said crystallization promoting material is a value measured by SIMS.
Claim 32
Dependent Claim
57 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with germanium in addition to a crystallization promoting material, wherein a concentration of said crystallization promoting material is 2×10 19 cm -3 or less.
Claim 33
Dependent Claim
57 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with germanium in addition to a crystallization promoting material, wherein a concentration of said crystallization promoting material is 2×10 19 cm -3 or less.
Claim 34
Dependent Claim
14 words
A semiconductor device according to claim 27 wherein said crystallization promoting material is nickel.
Claim 35
Dependent Claim
18 words
A semiconductor device according to claim 27 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 36
Dependent Claim
31 words
A semiconductor device according to claim 27 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
Claim 37
Dependent Claim
21 words
A semiconductor device according to claim 27 wherein the concentration of said crystallization promoting material is a value measured by SIMS.
Claim 38
Dependent Claim
45 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material.
Claim 39
Dependent Claim
45 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material.
Claim 40
Dependent Claim
24 words
A semiconductor device according to claim 32 wherein said Group IV element is selected from the group consisting of C, Ge, Sn and Pb.
Claim 41
Dependent Claim
14 words
A semiconductor device according to claim 32 wherein said crystallization promoting material is nickel.
Claim 42
Dependent Claim
18 words
A semiconductor device according to claim 32 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 43
Dependent Claim
31 words
A semiconductor device according to claim 32 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
Claim 44
Dependent Claim
62 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a concentration of said Group IV element is 5×10 14 to 5×10 16 cm -2 .
Claim 45
Dependent Claim
62 words
A semiconductor device comprising: a substrate having an insulating surface; and at least one thin film transistor formed over said substrate, said thin film transistor including a crystalline semiconductor film comprising silicon added with a Group IV element in addition to a crystallization promoting material, wherein a concentration of said Group IV element is 5×10 14 to 5×10 16 cm -2 .
Claim 46
Dependent Claim
24 words
A semiconductor device according to claim 37 wherein said Group IV element is selected from the group consisting of C, Ge, Sn and Pb.
Claim 47
Dependent Claim
14 words
A semiconductor device according to claim 37 wherein said crystallization promoting material is nickel.
Claim 48
Dependent Claim
18 words
A semiconductor device according to claim 37 wherein said semiconductor device is an active matrix-type liquid crystal display.
Claim 49
Dependent Claim
31 words
A semiconductor device according to claim 38 wherein said semiconductor device is an integrated sensor including at least one peripheral driver circuit and at least one sensor integrated over said substrate.
References Cited (Backward Citations)
US5705829A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-08-02 | 2003-02-01 | 2003-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-02 | 2007-02-01 | 2007-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-02 | 2011-02-01 | 2011-08-03 | $7700.00 | Window Closed / Lapsed |