US5932487A
Expired / Lapsed
US
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Method for forming a planar intermetal dielectric layer
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1998-03-12
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Granted: 1999-08-03
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Expires: 2018-03-12
Abstract
Abstract A method of forming a planar intermetal dielectric over conductive metal structures is disclosed. The method comprises the steps of: (1) forming a liner oxide layer over the conductive metal structures; (2) forming a spin on glass layer over the liner oxide layer; (3) forming a cap oxide layer over the spin on glass layer; (4) forming a TiN layer over the cap oxide layer; (5) patterning and etching a contact hole through the TiN layer using the cap oxide layer as an etching stop; and (6) etching the cap oxide, the spin on glass, and the liner oxide down to the conductive metal structures using the TiN layer as a mask.
Inventors
- 👤 Chine-Gie Lou
- 👤 Yeur-Luen Tu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P95/00; H10P95/06; H10P95/062; H10W20/092
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
112 words
A method of forming a planar intermetal dielectric over conductive metal structures, the method comprising the steps of: forming a liner oxide layer over the conductive metal structures; forming a spin on glass layer over the liner oxide layer; forming a cap oxide layer over the spin on glass layer; forming a barrier layer over the cap oxide layer; patterning and etching a contact hole through the barrier layer using the cap oxide layer as an etching stop; and etching the cap oxide layer, the spin on glass layer, and the liner oxide layer down to the conductive metal structures using the barrier layer as a mask to form a via hole.
Claim 2
Independent Claim
112 words
A method of forming a planar intermetal dielectric over conductive metal structures, the method comprising the steps of: forming a liner oxide layer over the conductive metal structures; forming a spin on glass layer over the liner oxide layer; forming a cap oxide layer over the spin on glass layer; forming a barrier layer over the cap oxide layer; patterning and etching a contact hole through the barrier layer using the cap oxide layer as an etching stop; and etching the cap oxide layer, the spin on glass layer, and the liner oxide layer down to the conductive metal structures using the barrier layer as a mask to form a via hole.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said barrier layer is a barrier metal layer.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said barrier layer is TiN.
Claim 5
Dependent Claim
11 words
The method of claim 1 wherein said barrier layer is Ti.
Claim 6
Dependent Claim
20 words
The method of claim 1 further including the step of depositing a further layer of TiN into said via hole.
Claim 7
Dependent Claim
18 words
The method of claim 5 further including the step of depositing a tungsten plug into said via hole.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein the thickness of said barrier layer is at least 300 angstroms.
Claim 9
Dependent Claim
73 words
The method of claim 1 wherein the step of patterning and etching said barrier layer includes the steps of: coating a photoresist layer onto said barrier layer; exposing said photoresist layer to an exposing light through a reticle mask so as to remove a portion of the photoresist layer covering said contact hole; developing said photoresist layer; etching said barrier layer using said photoresist layer as a mask; and stripping said photoresist layer.
Claim 10
Independent Claim
99 words
A method of forming a via hole through to a conducting structure underlying an intermetal dielectric layer, said method comprising the steps of: forming an oxide layer over said conducting structure, wherein said oxide layer comprises a liner oxide layer, a spin on glass layer, and a cap oxide layer; forming a barrier layer over said oxide layer; patterning and etching said barrier layer to produce a contact hole in said barrier layer; using said barrier layer as an etching mask, etching said oxide layer under said contact hole to reach said conducting structure to form said via hole.
Claim 11
Independent Claim
99 words
A method of forming a via hole through to a conducting structure underlying an intermetal dielectric layer, said method comprising the steps of: forming an oxide layer over said conducting structure, wherein said oxide layer comprises a liner oxide layer, a spin on glass layer, and a cap oxide layer; forming a barrier layer over said oxide layer; patterning and etching said barrier layer to produce a contact hole in said barrier layer; using said barrier layer as an etching mask, etching said oxide layer under said contact hole to reach said conducting structure to form said via hole.
Claim 12
Dependent Claim
14 words
The method of claim 9 wherein said barrier layer is a barrier metal layer.
Claim 13
Dependent Claim
17 words
The method of claim 9 wherein the thickness of said barrier layer is at least 300 angstroms.
Claim 14
Dependent Claim
11 words
The method of claim 9 wherein said barrier layer is TiN.
Claim 15
Dependent Claim
25 words
The method of claim 9 wherein said oxide layer comprises a liner oxide layer, an O 3 -TEOS oxide layer, and a cap oxide layer.
Claim 16
Dependent Claim
25 words
The method of claim 12 wherein said oxide layer comprises a liner oxide layer, an O 3 -TEOS oxide layer, and a cap oxide layer.
Claim 17
Dependent Claim
11 words
The method of claim 9 wherein said barrier layer is Ti.
Claim 18
Dependent Claim
73 words
The method of claim 9 wherein the step of patterning and etching said barrier layer includes the steps of: coating a photoresist layer onto said barrier layer; exposing said photoresist layer to an exposing light through a reticle mask so as to remove a portion of the photoresist layer covering said contact hole; developing said photoresist layer; etching said barrier layer using said photoresist layer as a mask; and stripping said photoresist layer.
References Cited (Backward Citations)
US4585490A
Cited
US4879257A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-02 | 2003-02-01 | 2003-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-02 | 2007-02-01 | 2007-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-02 | 2011-02-01 | 2011-08-03 | $7700.00 | Window Closed / Lapsed |