US5929466A
Expired / Lapsed
US
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Semiconductor device and method of fabricating the same
Assignee: Toshiba Corp
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Filing: 1997-06-13
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Granted: 1999-07-27
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Expires: 2017-06-13
Abstract
Abstract A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al1-x-yGaxInyN (0</=x</=1, 0</=y</=1, x+y</=1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al1-s-tGasIntN (0</=s</=1, 0</=t</=1, s+t</=1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al1-x-yGaxInyN (0</=x</=1, 0</=y</=1, x+y</=1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and A12O3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.
Inventors
- 👤 Yasuo Ohba
- 👤 Ako Hatano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D62/85; H10D62/852; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H01S5/02; H01S5/0206; H01S5/0208; H01S5/04256; H01S5/04257
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
94 words
A semiconductor device comprising: a buffer semiconductor layer made of Al 1-s-t Ga s In t N (0≦s≦1, 0≦t≦1, s+t≦1) and having a number of pinholes formed therein; a thermal distortion reducing layer made of Al 1-u-v Ga u In v N (0≦u≦1, 0≦v≦1, u+v≦1) formed on said buffer semiconductor layer and having a different chemical formula from that of said buffer semiconductor layer, a first cladding layer formed on said thermal distortion reducing layer; an active layer formed on said first cladding layer; and a second cladding layer formed on said active layer.
Claim 2
Dependent Claim
94 words
A semiconductor device comprising: a buffer semiconductor layer made of Al 1-s-t Ga s In t N (0≦s≦1, 0≦t≦1, s+t≦1) and having a number of pinholes formed therein; a thermal distortion reducing layer made of Al 1-u-v Ga u In v N (0≦u≦1, 0≦v≦1, u+v≦1) formed on said buffer semiconductor layer and having a different chemical formula from that of said buffer semiconductor layer, a first cladding layer formed on said thermal distortion reducing layer; an active layer formed on said first cladding layer; and a second cladding layer formed on said active layer.
Claim 3
Dependent Claim
41 words
The semiconductor device according to claim 1, wherein, in said Al 1-u-v Ga u In v N (0≦u≦1, 0≦v≦1, u+v≦1) for said thermal distortion reducing layer , v is set to be not less than 0.1 and not more than 0.9.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein a film thickness of said thermal distortion reducing layer is greater than that of said semiconductor layer.
Claim 5
Dependent Claim
30 words
The semiconductor device according to claim 1, further comprising a cap layer on said thermal distortion reducing layer to prevent evaporation of In included in said thermal distortion reducing layer.
Claim 6
Dependent Claim
29 words
The semiconductor device according to claim 4, wherein said cap layer is made of Al 1-x Ga x N (0≦x≦1) and is formed at 500° C. to 800° C.
Claim 7
Dependent Claim
25 words
The semiconductor device according to claim 1, wherein said first cladding layer is made of Al 1-x-y Ga x In y N (0≦x≦1, 0≦y≦1, x+y≦1).
Claim 8
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein said thermal distortion reducing layer has a thickness of 50 nm to 1000 nm.
Claim 9
Dependent Claim
20 words
A semiconductor device according to claim 1, further comprising a single crystal substrate on which said semiconductor layer is formed.
Claim 10
Dependent Claim
102 words
A semiconductor laser comprising: a first layer; a second layer made of Al 1-u-v Ga u In v N (0≦u≦1, 0≦v≦1, u+v≦1) formed on said first layer, a third layer formed on said second layer; an active layer formed on said third layer; and a fourth layer formed on said active layer, wherein said first layer is formed of Al 1-s-t Ga s In t N (0≦s≦1, 0≦t≦1, s+t≦1)with an average film thickness of 3 nm to 10 nm such that said first layer has a number of pinholes formed among said Al 1-s-t Ga s In t N (0≦s≦1, 0≦t≦1, s+t≦1).
Claim 11
Dependent Claim
102 words
A semiconductor laser comprising: a first layer; a second layer made of Al 1-u-v Ga u In v N (0≦u≦1, 0≦v≦1, u+v≦1) formed on said first layer, a third layer formed on said second layer; an active layer formed on said third layer; and a fourth layer formed on said active layer, wherein said first layer is formed of Al 1-s-t Ga s In t N (0≦s≦1, 0≦t≦1, s+t≦1)with an average film thickness of 3 nm to 10 nm such that said first layer has a number of pinholes formed among said Al 1-s-t Ga s In t N (0≦s≦1, 0≦t≦1, s+t≦1).
Claim 12
Dependent Claim
20 words
A secmiconductor laser according to claim 9, further comprising a single crystal substrate on which said first layer is formed.
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