US5923972A
Expired / Lapsed
US
⏱️ 0.0 years remaining
DRAM cell capacitor fabrication method
Assignee: SK Hynix Inc
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Filing: 1996-08-23
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Granted: 1999-07-13
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Expires: 2016-08-23
Abstract
Abstract A method for making a cell capacitor of a semiconductor device such as a dynamic random access memory includes steps for increasing the height of a capacitor electrode. With increased height, the capacitance of the fabricated capacitor is increased while allowing high integration.
Inventors
- 👤 Sang-Don Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:07
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
161 words
A method of making a capacitor, comprising the steps of: forming a first insulation film on a substrate; forming spaced-apart etch stopper films on said first insulation film; forming a second insulation film on the first insulation film and said etch stopper films; etching the second insulation film and the first insulation film to form a contact hole so as to expose a portion of the substrate; forming a horizontal node electrode on a portion of the second insulation film including the contact hole; forming a third insulation film on said horizontal node electrode; etching the second insulation film using said third insulation film and the horizontal node electrode; forming a vertical node electrode at a side surface of the third insulation film and the horizontal node electrode, and the second insulation film; removing the third insulation film; and forming a dielectric film on the etch stopper film including the horizontal and vertical node electrode and forming a plate electrode thereon.
Claim 2
Independent Claim
161 words
A method of making a capacitor, comprising the steps of: forming a first insulation film on a substrate; forming spaced-apart etch stopper films on said first insulation film; forming a second insulation film on the first insulation film and said etch stopper films; etching the second insulation film and the first insulation film to form a contact hole so as to expose a portion of the substrate; forming a horizontal node electrode on a portion of the second insulation film including the contact hole; forming a third insulation film on said horizontal node electrode; etching the second insulation film using said third insulation film and the horizontal node electrode; forming a vertical node electrode at a side surface of the third insulation film and the horizontal node electrode, and the second insulation film; removing the third insulation film; and forming a dielectric film on the etch stopper film including the horizontal and vertical node electrode and forming a plate electrode thereon.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein said etch stopper film is formed bv a nitride film.
Claim 4
Dependent Claim
20 words
The method of claim 1, wherein said second insulation film has a thickness of about 500 Å through 1000 Å.
Claim 5
Dependent Claim
17 words
The method of claim 1, wherein said second insulation film is an oxide film an oxide film.
Claim 6
Dependent Claim
20 words
The method of claim 1, wherein said horizontal node electrode, vertical node electrode, and plate electrode are made of polysilicon.
Claim 7
Independent Claim
138 words
A method of making a semiconductor device, comprising the steps of: forming a first insulation layer on a substrate; forming a stopper film on said first insulation layer; forming a second insulation layer; forming a contact hole through said first and second insulation films and said stopper film; forming a first conductive layer in said contact hole and said second insulation layer; forming a third insulation layer; removing a portion of said second and third insulation layers and said first conductive layer; forming a second conductive layer on sidewalls of said second and third insulation layers, said second conductive layer being in coupled to said first conductive layer; removing said second insulation film to expose said first conductive layer; forming a dielectric film on said first conductive layer; and forming a third conductive layer on said dielectric film.
Claim 8
Independent Claim
138 words
A method of making a semiconductor device, comprising the steps of: forming a first insulation layer on a substrate; forming a stopper film on said first insulation layer; forming a second insulation layer; forming a contact hole through said first and second insulation films and said stopper film; forming a first conductive layer in said contact hole and said second insulation layer; forming a third insulation layer; removing a portion of said second and third insulation layers and said first conductive layer; forming a second conductive layer on sidewalls of said second and third insulation layers, said second conductive layer being in coupled to said first conductive layer; removing said second insulation film to expose said first conductive layer; forming a dielectric film on said first conductive layer; and forming a third conductive layer on said dielectric film.
Claim 9
Dependent Claim
15 words
The method of claim 6, wherein said first insulation layer is a CVD oxide film.
Claim 10
Dependent Claim
20 words
The method of claim 6, wherein said stopper film is a CVD nitride film of about 100 to 1000 angstroms.
Claim 11
Dependent Claim
21 words
The method of claim 6, wherein said second insulation layer is a CVD oxide film of about 500 to 1000 angstroms.
Claim 12
Dependent Claim
25 words
The method of claim 6, wherein said step of forming said contact hole comprises etching said first and second insulation films and said stopper film.
Claim 13
Dependent Claim
20 words
The method of claim 6, wherein said first and second conductive layers are polysilicon of about 500 to 3000 angstroms.
Claim 14
Dependent Claim
15 words
The method of claim 6, wherein said third insulation layer is a CVD oxide film.
Claim 15
Dependent Claim
30 words
The method of claim 6, wherein said step of removing the portion comprises: forming a photoresist pattern; and etching said second and third insulation layers and said first conductive layer.
Claim 16
Dependent Claim
27 words
The method of claim 6, wherein said step of removing said second insulation film to expose said first conductive layer comprises wet etching said second insulation film.
Claim 17
Dependent Claim
24 words
The method of claim 6, wherein said dielectric film is made from one of Ta 2 O 5 , BaSrTiO 3 and the like.
Claim 18
Dependent Claim
13 words
The method of claim 6, wherein said third conductive layer is a polysilicon.
References Cited (Backward Citations)
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